Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure

Kanzo Kato; Seiji Nagahara; Lior Huli; Nathan Antonovich; David Hetzer; Steven Grzeskowiak; Alexandra Krawicz; Eric Liu; Nayoung Bae; Akiteru Ko; Satoru Shimura; Shinichiro Kawakami; Dinh Conque; Takahiro Kitano; Luciana Meli; Indira Seshadri; Martin Burkhardt; Karen Petrillo

doi:10.1117/12.2687901

27 November 2023 Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure

Kanzo Kato, Seiji Nagahara, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Nayoung Bae, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Dinh Conque, Takahiro Kitano, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Author Affiliations +

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC127500G (2023) https://doi.org/10.1117/12.2687901
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

As the semiconductor industry continues to push the limits of integrated circuit fabrication, reliance on extreme ultraviolet lithography (EUVL) has increased. Additionally, it has become clear that new techniques and methods are needed to mitigate pattern defectivity and roughness after lithography and etch processes and eliminate film-related defects. These approaches require further improvements to the process chemicals and the lithography process equipment to achieve finer patterns. The ESPERTTM (Enhanced Sensitivity develoPER TechnologyTM) technique has been developed and optimized to fulfil this novel development need. The ESPERTTM has demonstrated a capability that can enhance the developing contrast between the EUV exposed and unexposed areas. This paper reviews that 23 nm pitch line and space and sub-40 nm pitch pillars patterns were realized by high NILS illuminations with 0.33 NA single exposure, and we will show the ESPERTTM helped reduce the minimum critical dimension size, defectivity and roughness at the finer patterns.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Kanzo Kato, Seiji Nagahara, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Nayoung Bae, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Dinh Conque, Takahiro Kitano, Luciana Meli, Indira Seshadri, Martin Burkhardt, and Karen Petrillo "Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC127500G (27 November 2023); https://doi.org/10.1117/12.2687901

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