Ms. Kazuyo Morita Profile

Kazuyo Morita

Manager at Oji Holdings Corp

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Publications (11)

Proceedings Article | 9 April 2024 Presentation + Paper

Non-PFAS biomass EUV resist for sustainable semiconductor manufacturing

Kazuyo Morita

Proceedings Volume 12957, 1295718 (2024) https://doi.org/10.1117/12.3010636

KEYWORDS: Biomass, Extreme ultraviolet, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Sustainability, Polymers, Semiconductor manufacturing, Carbon monoxide, Climate change

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Proceedings Article | 1 May 2023 Presentation + Paper

Potential of biomass EUV non-CAR type resist for high-NA EUV lithography

Kazuyo Morita, Yasuaki Tanaka, Yuji Tanaka, Masaya Asai

Proceedings Volume 12498, 1249815 (2023) https://doi.org/10.1117/12.2657938

KEYWORDS: Biomass, Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Photoresist processing, Metals, Scanning electron microscopy, Materials properties, Image processing, Fabrication

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Proceedings Article | 27 September 2021 Presentation

Improvement of lithography performance of hemicellulose non-CAR type resist by adjusting resist structure for EUV lithography

Kazuyo Morita, Yasuaki Tanaka

Proceedings Volume 11854, 1185408 (2021) https://doi.org/10.1117/12.2600916

KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Polymers, Molecules, Metals, Absorption

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Proceedings Article | 22 February 2021 Presentation + Paper

Improved non-CAR type hemicellulose resists for EUV lithography

Kazuyo Morita, Yasuaki Tanaka, Kimiko Yamamoto, Hiroki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Mori, Tomohiro Motono, Harold Stokes, Andreia Figueiredo dos Santos, Masaya Asai

Proceedings Volume 11612, 1161207 (2021) https://doi.org/10.1117/12.2583761

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Lithography, Stochastic processes, Silicon, Polymers, Photoresist processing

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Proceedings Article | 20 September 2020 Presentation

High sensitivity non-CAR type hemicellulose resists for EUV Lithography

Kazuyo Morita, Kimiko Yamamoto, Yasuaki Tanaka, Hiroki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Mori, You Arisawa, Tomohiro Motono, Harold Stokes, Masaya Asai

Proceedings Volume 11517, 115170E (2020) https://doi.org/10.1117/12.2572769

KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Stochastic processes, Polymers, Photoresist processing, Silicon, Semiconducting wafers, Process control, Structural design

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Proceedings Article | 23 March 2020 Paper

High sensitivity non-CAR resists for EUV and EB lithography

Kazuyo Morita, Kimiko Yamamoto, Masahiko Harumoto, Yuji Tanaka, Chisayo Mori, You Arisawa, Tomohiro Motono, Harold Stokes, Masaya Asai

Proceedings Volume 11326, 113260C (2020) https://doi.org/10.1117/12.2551476

KEYWORDS: Photoresist processing, Extreme ultraviolet lithography, Metals, Lithography, Extreme ultraviolet, Photoresist materials

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Proceedings Article | 4 June 2019 Paper

Litho-performance expansion with new SOC made from Hemicellulose

Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Masaya Asai, Charles Pieczulewski, Harold Stokes, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Kazuyo Morita

Proceedings Volume 10957, 109571V (2019) https://doi.org/10.1117/12.2517692

KEYWORDS: System on a chip, Silicon, Etching, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Line width roughness, Photoresist developing, Scanning electron microscopy, Antireflective coatings

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Proceedings Article | 25 March 2019 Paper

Improved hemicellulose spin on carbon hardmask

Kazuyo Morita, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Tomohiro Motono, Harold Stokes, Masaya Asai, Charles Pieczulewski

Proceedings Volume 10960, 109601A (2019) https://doi.org/10.1117/12.2514915

KEYWORDS: System on a chip, Reactive ion etching, Image processing, Extreme ultraviolet, Carbon, Scanning electron microscopy, Optical lithography, Etching, Semiconducting wafers, Logic devices

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Proceedings Article | 28 March 2018 Paper

New spin on carbon materials made from hemicellulose for hardmask layer

Kazuyo Morita, Kimiko Yamamoto, Koki Hongo, Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Harold Stokes, Masaya Asai

Proceedings Volume 10586, 105860M (2018) https://doi.org/10.1117/12.2297333

KEYWORDS: Carbon, System on a chip, Etching, Resistance, Thin film coatings, Reactive ion etching, Semiconducting wafers, Silicon, Photomasks, Coating

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Proceedings Article | 19 March 2018 Presentation

Xylan block copolymer for wide-range directed self-assembly lithography enabling wider range of 3D patterning size (Conference Presentation)

Kimiko Yamamoto, Kazuyo Morita, Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, Masaya Asai

Proceedings Volume 10586, 105860Y (2018) https://doi.org/10.1117/12.2297334

KEYWORDS: Lithography, Directed self assembly, Optical lithography, Semiconductors, Reactive ion etching, Silicon, Logic, 3D modeling, Metals, Contamination

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1. INTRODUCTION Directed self-assembly (DSA) lithography is one of the promising next generation lithography. There are mainly 2 requirements for next generation lithography. One is smaller size lithography for logic and DRAM etc.. Another is 3D lithography for 3D semiconductor devices. Regarding DSA lithography, wide-range DSA to expand applicable patterning size was studied. However, there are not well known a potential of 3D lithography; deep pattern of directed self-assembly and deep RIE on Si devices. This paper describes xylan high-chi block copolymer and its wider range of 3D patterning size. 2. EXPERIMENTAL RESULTS AND DISCUSSION A structure model of xylan block copolymer for wide-range DSA lithography is proposed. It is composed of A and B part in hydrophobic part and C and D part in hydrophilic part. Part D has xylan structure. The xylan block copolymers were synthesized and dissolved in PGMEA. Metal contamination was removed. Then, they were spin-coated on a substrate with guide pattern, annealed and carried out dry development using RIE on 300 mm wafer. Directed self-assembly patterns were evaluated by SEM. In our experimental results, half pitch 8.3 nm of L/S pattern and CD 51 nm of hexagonal hole pattern were obtained. According to these results, xylan block copolymer is suitable for wide-range DSA. Spin coated thickness of xylan block copolymer were evaluated. From 50 nm to 1.3 μm of thickness was realized and micro phase separation was confirmed. These results suggest xylan block copolymer has a possibility of wider thickness range of micro-phase separation. Si deep RIE of xylan block copolymer was carried out. Silicon depth was 300 nm. It seems that xylan block copolymer is suitable for 3D semiconductor lithography. 3. SUMMARY It was confirmed xylan block copolymer is suitable for 3D patterning size on directed self-assembly lithography. It has a big potential for wider application of not only 2D but also 3D semiconductor devices.

Proceedings Article | 27 March 2017 Paper

Hemicellulose block copolymers made from woods for wide-range directed self-assembly lithography enabling wider range of applicable patterning size

Kazuyo Morita, Kimiko Yamamoto

Proceedings Volume 10146, 101460Y (2017) https://doi.org/10.1117/12.2257625

KEYWORDS: Directed self assembly, Lithography, Optical lithography, Industrial chemicals, Semiconductors, Chemistry, Molecular self-assembly, Etching, Line edge roughness, Image processing, Scanning electron microscopy, Polymethylmethacrylate, Dry etching

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Showing 5 of 11 publications

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