Dr. Zhigang Wang Profile

Dr. Zhigang Wang

at Hitachi High-Tech Corp

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Author

Publications (9)

SPIE Journal Paper | 31 October 2023 Open Access

In situ electrical property quantification of memory devices by modulated electron microscopy

Muneyuki Fukuda, Kazuhisa Hasumi, Takashi Nobuhara, Hirohiko Kitsuki, Zhigang Wang, Kazuhiro Nojima, Yusaku Suzuki, Akira Hamaguchi, Masashi Kubo, Masaya Hosokawa

JM3, Vol. 22, Issue 04, 041605, (October 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041605

KEYWORDS: Modulation, Electron microscopy, Semiconducting wafers, Scanning electron microscopy, Electrical properties, Inspection, Defect detection, Scanning probe microscopy, Manufacturing, Defect inspection

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Proceedings Article | 30 April 2023 Presentation

From micro to nano, and beyond: measuring innovations

Zhigang Wang, Byoungho Lee

Proceedings Volume 12496, 1249604 (2023) https://doi.org/10.1117/12.2664258

KEYWORDS: 3D metrology, Semiconductors, Metrology, Industry, Extreme ultraviolet, Electron beams

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Proceedings Article | 27 April 2023 Presentation + Paper

In-situ electrical property quantification of memory devices by modulated electron microscopy

Muneyuki Fukuda, Kazuhisa Hasumi, Takashi Nobuhara, Hirohiko Kitsuki, Zhigang Wang, Kazuhiro Nojima, Yusaku Suzuki, Akira Hamaguchi, Masashi Kubo, Masaya Hosokawa

Proceedings Volume 12496, 124961O (2023) https://doi.org/10.1117/12.2658250

KEYWORDS: Modulation, Electron microscopy, Semiconducting wafers, Inspection, Defect detection, Scanning electron microscopy, Scanning probe microscopy, Electrical properties, Manufacturing, Nanometer integrated circuits, Semiconductor characterization

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Proceedings Article | 30 March 2020 Presentation + Paper

High-accuracy, high-speed, and smart metrology in the EUV era

Zhigang Wang, Kei Sakai, Yasushi Ebizuka, Masumi Shirai, Makoto Suzuki

Proceedings Volume 11325, 113251Q (2020) https://doi.org/10.1117/12.2551868

KEYWORDS: Metrology, Extreme ultraviolet, Scanning electron microscopy, Artificial intelligence, Image processing, Semiconducting wafers, Stochastic processes, Critical dimension metrology, Error analysis, Inspection

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Proceedings Article | 29 March 2019 Presentation + Paper

What is prevalent CD-SEM's role in EUV era?

Zhigang Wang, Yoshinori Momonoi, Katsumi Setoguchi, Makoto Suzuki, Satoru Yamaguchi

Proceedings Volume 10959, 1095914 (2019) https://doi.org/10.1117/12.2514697

KEYWORDS: Metrology, Extreme ultraviolet, Image processing, Stochastic processes, Scanning electron microscopy, Semiconducting wafers, Extreme ultraviolet lithography, Process control, Lithography, Error analysis

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Proceedings Article | 2 April 2010 Paper

Development for 2D pattern quantification method on mask and wafer

Ryoichi Matsuoka, Hiroaki Mito, Yasutaka Toyoda, Zhigang Wang

Proceedings Volume 7638, 76382L (2010) https://doi.org/10.1117/12.846720

KEYWORDS: Photomasks, Silicon, Metrology, Semiconducting wafers, Optical proximity correction, Shape analysis, Semiconductors, Process control, Computer aided design, Inspection

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We have developed the effective method of mask and silicon 2-dimensional metrology. The aim of this method is evaluating the performance of the silicon corresponding to Hotspot on a mask. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. 2-dimensional Shape quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. On the other hand, there is roughness in the silicon shape made from a mass-production line. Moreover, there is variation in the silicon shape. For this reason, quantification of silicon shape is important, in order to estimate the performance of a pattern. In order to quantify, the same shape is equalized in two dimensions. And the method of evaluating based on the shape is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. It is possible to analyze variability of the edge of the same position with high precision. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. - Estimate of the correlativity of shape variability and a process margin. - Determination of two-dimensional variability of pattern. - Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the shape of the same location of Design, Mask, and Silicon in such a viewpoint.

Proceedings Article | 1 November 2007 Paper

Long-term critical dimension measurement performance for a new mask CD-SEM, S-9380M

Zhigang Wang, Kock Khuen Seet, Ritsuo Fukaya, Yasuhiro Kadowaki, Noriaki Arai, Makoto Ezumi, Hidetoshi Satoh

Proceedings Volume 6730, 67304T (2007) https://doi.org/10.1117/12.746332

KEYWORDS: Ultraviolet radiation, Photomasks, Critical dimension metrology, Scanning electron microscopy, Contamination, Inspection, Optical design, Metrology, Image processing, Imaging systems

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Proceedings Article | 20 August 2004 Paper

Recent CD accuracy improvements for HL-7000M

Zhigang Wang, Hidetoshi Satoh, Hiroyuki Ito, Yasunari Sohda, Hiroya Ohta, Hajime Kawano, Yasuhiro Kadowaki, Kazui Mizuno, Takashi Matsuzaka

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557807

KEYWORDS: Optical proximity correction, Vestigial sideband modulation, Critical dimension metrology, Calibration, Photomasks, Optical simulations, Data conversion, Manufacturing, Electron beams, Optics manufacturing

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Proceedings Article | 17 December 2003 Paper

Improved image placement performance of HL-7000M

Masaomi Tanaka, Hiroyuki Ito, Hiroyuki Takahashi, Kazuyoshi Oonuki, Yasuhiro Kadowaki, Hidetoshi Sato, Hajime Kawano, Zhigang Wang, Kazui Mizuno, Genya Matsuoka

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518005

KEYWORDS: Electrodes, Monochromatic aberrations, Photomasks, Optical design, Electron beams, Semiconductors, Electromagnetism, Metrology, Lithography, Optical proximity correction

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Showing 5 of 9 publications

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