OE/LASE '92
19-24 January 1992
Los Angeles, CA, United States
High-Power Lasers I
Proc. SPIE 1634, Recent advances in antiguided diode laser arrays, 0000 (26 June 1992); doi: 10.1117/12.59118
Proc. SPIE 1634, High-efficiency, high-output-power antiguide laser diode arrays, 0000 (26 June 1992); doi: 10.1117/12.59119
Proc. SPIE 1634, Injection locking of antiguided resonant optical waveguide arrays, 0000 (26 June 1992); doi: 10.1117/12.59120
Proc. SPIE 1634, Operating characteristics of broad area traveling wave semiconductor amplifiers, 0000 (26 June 1992); doi: 10.1117/12.59121
Proc. SPIE 1634, Characteristics of active grating-surface-emitting amplified lasers, 0000 (26 June 1992); doi: 10.1117/12.59122
Surface-Emitting Lasers
Proc. SPIE 1634, Theoretical and experimental investigation of periodic corrugated dielectric waveguides, 0000 (26 June 1992); doi: 10.1117/12.59123
Proc. SPIE 1634, Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arrays, 0000 (26 June 1992); doi: 10.1117/12.59124
Proc. SPIE 1634, High-power CW operation of laser diodes with etched micromirrors, 0000 (26 June 1992); doi: 10.1117/12.59125
Proc. SPIE 1634, High-power, optically pumped, pulsed InGaAs/GaAs vertical-cavity surface-emitting semiconductor laser with resonant periodic gain at 918 nm, 0000 (26 June 1992); doi: 10.1117/12.59126
Laser Dynamics I
Proc. SPIE 1634, Effect of well-barrier hole burning on the dynamic response of quantum-well lasers, 0000 (26 June 1992); doi: 10.1117/12.59127
Proc. SPIE 1634, High-speed properties of 1.55 um InGaAs-InGaAsP MQW L/4 shifted DFB lasers, 0000 (26 June 1992); doi: 10.1117/12.59128
Proc. SPIE 1634, Carrier transport effects in high-speed quantum-well lasers, 0000 (26 June 1992); doi: 10.1117/12.59129
Proc. SPIE 1634, Differential gain and damping factor in strained InGaAs/GaAs quantum well lasers, 0000 (26 June 1992); doi: 10.1117/12.59130
Visible and Mid-infrared Semiconductor Lasers
Proc. SPIE 1634, High-power AlGaInP visible laser diodes and arrays, 0000 (26 June 1992); doi: 10.1117/12.59131
Proc. SPIE 1634, High power, 8.5 W cw, visible laser diodes, 0000 (26 June 1992); doi: 10.1117/12.59132
Proc. SPIE 1634, Mid-IR HgCdTe double heterostructure lasers, 0000 (26 June 1992); doi: 10.1117/12.59133
Proc. SPIE 1634, 3 um InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy, 0000 (26 June 1992); doi: 10.1117/12.59134
Semiconductor Laser Reliability
Proc. SPIE 1634, Degradation modes and reliability of semiconductor lasers used in optical fiber transmission systems, 0000 (26 June 1992); doi: 10.1117/12.59135
Proc. SPIE 1634, High-power, high-reliability laser diodes, 0000 (26 June 1992); doi: 10.1117/12.59136
Proc. SPIE 1634, Comparison of the facet heating behavior between AlGaAs single quantum well lasers and double-heterojunction lasers, 0000 (26 June 1992); doi: 10.1117/12.59137
Proc. SPIE 1634, Highly reliable high-power AlGaAs lasers with window grown on facets, 0000 (26 June 1992); doi: 10.1117/12.59138
Proc. SPIE 1634, Effects of design and processing on the reliability of high-power AlGaAs diode lasers, 0000 (26 June 1992); doi: 10.1117/12.59139
Proc. SPIE 1634, Device-degradation phenomena in III-V semiconductor lasers and LEDs, 0000 (26 June 1992); doi: 10.1117/12.59140
Proc. SPIE 1634, Reliability of wide bandgap semiconductor diode lasers, 0000 (26 June 1992); doi: 10.1117/12.59141
Laser Dynamics II
Proc. SPIE 1634, High-frequency modulation of semiconductor laser amplifiers, 0000 (26 June 1992); doi: 10.1117/12.59142
Proc. SPIE 1634, 2-ps RC product new SI-BH laser structure for far over 20-GHz operation, 0000 (26 June 1992); doi: 10.1117/12.59143
Proc. SPIE 1634, Wavelength tunable 4-element laser array, 0000 (26 June 1992); doi: 10.1117/12.59144
Strained-Quantum-Well Lasers I
Proc. SPIE 1634, High-power single-frequency 980-nm diode lasers, 0000 (26 June 1992); doi: 10.1117/12.59145
Proc. SPIE 1634, High-power single-mode strained-layer lasers emitting at 980 nm, 0000 (26 June 1992); doi: 10.1117/12.59146
Proc. SPIE 1634, Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells, 0000 (26 June 1992); doi: 10.1117/12.59147
High-Power Lasers II
Proc. SPIE 1634, Semiconductor laser array in an external Talbot cavity, 0000 (26 June 1992); doi: 10.1117/12.59148
Proc. SPIE 1634, Automated two-dimensional phase sensing and control using phase-contrast imaging, 0000 (26 June 1992); doi: 10.1117/12.59149
Proc. SPIE 1634, Effects of path-length errors on external-cavity semiconductor laser arrays, 0000 (26 June 1992); doi: 10.1117/12.59150
Proc. SPIE 1634, High-power TQW AlGaAs laser with new inner-stripe structure, 0000 (26 June 1992); doi: 10.1117/12.59151
Proc. SPIE 1634, High-power GaInAs lasers with distributed Bragg reflectors, 0000 (26 June 1992); doi: 10.1117/12.59152
Proc. SPIE 1634, Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source, 0000 (26 June 1992); doi: 10.1117/12.59153
Poster Session
Proc. SPIE 1634, Widely tunable, high power external cavity semiconductor lasers, 0000 (26 June 1992); doi: 10.1117/12.59154
Proc. SPIE 1634, Millisecond pulse length two-dimensional diode laser arrays, 0000 (26 June 1992); doi: 10.1117/12.59155
High-Power Lasers II
Proc. SPIE 1634, High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 um, 0000 (26 June 1992); doi: 10.1117/12.59156
Poster Session
Proc. SPIE 1634, Transverse-mode filtering of wide stripe semiconductor lasers using an external cavity, 0000 (26 June 1992); doi: 10.1117/12.59157
Proc. SPIE 1634, Deep traps at MOCVD GaAs and regrown AlxGa1-xAs interfaces, 0000 (26 June 1992); doi: 10.1117/12.59158
Proc. SPIE 1634, Fiber bundles displacement measuring device, 0000 (26 June 1992); doi: 10.1117/12.59159
Proc. SPIE 1634, Distributed-feedback vertical-cavity surface-emitting laser with resonant-periodic-gain active region, 0000 (26 June 1992); doi: 10.1117/12.59160
Proc. SPIE 1634, Theoretical model for frequency locking a diode laser with a Faraday cell, 0000 (26 June 1992); doi: 10.1117/12.59161
Proc. SPIE 1634, Low-energy damageless Cl2 RIBE of AlGaAs for fabricating laser diodes, 0000 (26 June 1992); doi: 10.1117/12.59162
Proc. SPIE 1634, Improved LPE regrowth process of high-power InGaAsP/InP single lobe operation BH lasers, 0000 (26 June 1992); doi: 10.1117/12.59163
Proc. SPIE 1634, Injection laser active Q-switching due to free carrier effects in a single modulation-doped quantum well, 0000 (26 June 1992); doi: 10.1117/12.59164
Proc. SPIE 1634, Infrared laser cathode-ray tubes of high efficiency at room temperature, 0000 (26 June 1992); doi: 10.1117/12.59165
Strained-Quantum-Well Lasers II
Proc. SPIE 1634, Characteristics and reliability of high temperature strained quantum well lasers, 0000 (26 June 1992); doi: 10.1117/12.59166
Proc. SPIE 1634, InGaAs/GaAs/InGaP strained-layer-quantum-well lasers grown by gas-source molecular beam epitaxy, 0000 (26 June 1992); doi: 10.1117/12.59167
Proc. SPIE 1634, (InAs)1/(GaAs)4 superlattices strained quantum-well lasers, 0000 (26 June 1992); doi: 10.1117/12.59168
Proc. SPIE 1634, Design of InGaAs strained quantum-well lasers for high-temperature operation, 0000 (26 June 1992); doi: 10.1117/12.59169
Materials and Processes for Semiconductor Lasers
Proc. SPIE 1634, New advances in the planetary multiwafer MOVPE reactor technology, 0000 (26 June 1992); doi: 10.1117/12.59170
Proc. SPIE 1634, Application of metal-organic chemical vapor deposition to vertical-cavity surface-emitting lasers, 0000 (26 June 1992); doi: 10.1117/12.59171
Proc. SPIE 1634, Semiconductor laser with unstable resonator consisting of negative cylindrical lenses, 0000 (26 June 1992); doi: 10.1117/12.59172
Proc. SPIE 1634, Laser assisted etching to fabricate a buried continuous graded cavity for unstable semiconductor laser diodes, 0000 (26 June 1992); doi: 10.1117/12.59173
Proc. SPIE 1634, Laterally-injected high-performance lasers by impurity-induced disordering, 0000 (26 June 1992); doi: 10.1117/12.59174
Proc. SPIE 1634, Composition dependence of the dry etching of MOCVD-grown AlxGa1-xAs, 0000 (26 June 1992); doi: 10.1117/12.59175