PROCEEDINGS VOLUME 3742
MICROELECTRONIC MANUFACTURING TECHNOLOGIES | 19-21 MAY 1999
Process and Equipment Control in Microelectronic Manufacturing
MICROELECTRONIC MANUFACTURING TECHNOLOGIES
19-21 May 1999
Edinburgh, United Kingdom
Control of Process Equipment and Materials
Proc. SPIE 3742, Equipment and wafer modeling of batch furnaces by neural networks, 0000 (23 April 1999); doi: 10.1117/12.346230
Proc. SPIE 3742, Atmospheric furnace pressure control, 0000 (23 April 1999); doi: 10.1117/12.346240
Proc. SPIE 3742, Use of poly test wafer volume fraction as an input to control a diffusion poly doping process, 0000 (23 April 1999); doi: 10.1117/12.346247
Proc. SPIE 3742, Characterization, development, and implemenation of multiplaten in-situ rate monitor (ISRM) control for chemical mechanical planarization in ASIC manufacturing, 0000 (23 April 1999); doi: 10.1117/12.346248
Proc. SPIE 3742, Raw wafer material control to eliminate low yield, 0000 (23 April 1999); doi: 10.1117/12.346249
Statistical Process Control, Design of Experiments and Modeling
Proc. SPIE 3742, Practical issues in the deployment of a run-to-run control system in a semiconductor manufacturing facility, 0000 (23 April 1999); doi: 10.1117/12.346250
Proc. SPIE 3742, Statistical control for autocorrelated data, 0000 (23 April 1999); doi: 10.1117/12.346251
Proc. SPIE 3742, Statistical approach to linewidth control in a logic fab, 0000 (23 April 1999); doi: 10.1117/12.346252
Proc. SPIE 3742, High-voltage resurf DMOS process development using covariance-based response surfaces, 0000 (23 April 1999); doi: 10.1117/12.346231
Proc. SPIE 3742, DOE analysis of layout/process interactions in bipolar Schottky technology, 0000 (23 April 1999); doi: 10.1117/12.346232
Proc. SPIE 3742, Characterization of gate electrode etch process for 0.25 um extended to 0.18 um, 0000 (23 April 1999); doi: 10.1117/12.346233
Proc. SPIE 3742, Automatic furnace downloading to SUPREM format, 0000 (23 April 1999); doi: 10.1117/12.346234
Proc. SPIE 3742, Automated cost of ownership analysis for process development, 0000 (23 April 1999); doi: 10.1117/12.346235
Control of Plasma Processes and Equipment
Proc. SPIE 3742, Methodology to improve mean time between clean and decrease defectivity on LAM TCP 9600 by using self-excited electron plasma resonance spectroscopy, 0000 (23 April 1999); doi: 10.1117/12.346236
Proc. SPIE 3742, In-situ UV absorption CF2 sensor for reactive ion etch process control, 0000 (23 April 1999); doi: 10.1117/12.346237
Proc. SPIE 3742, Critical dimension and oxide damage control during poly/polycide etching on a TCP9400SE using the SEERS plasma diagnostic system, 0000 (23 April 1999); doi: 10.1117/12.346238
Poster Session
Proc. SPIE 3742, Optical integrated circuit for quality control, 0000 (23 April 1999); doi: 10.1117/12.346239
Proc. SPIE 3742, Dry etch uniformity and optimization using graphical and DOE techniques, 0000 (23 April 1999); doi: 10.1117/12.346241
Proc. SPIE 3742, Metal etch process defects, 0000 (23 April 1999); doi: 10.1117/12.346242
Proc. SPIE 3742, Generation mechanism and reduction methods of post-passivation-etch silklike polymers, 0000 (23 April 1999); doi: 10.1117/12.346243
Proc. SPIE 3742, Integration of factory simulation with TCAD process and device simulation within a total TCAD approach to DFM, 0000 (23 April 1999); doi: 10.1117/12.346244
Statistical Process Control, Design of Experiments and Modeling
Proc. SPIE 3742, Characterization of metal profile notching as a result of electron shading in a high-density plasma etcher, 0000 (23 April 1999); doi: 10.1117/12.346245
Control of Process Equipment and Materials
Proc. SPIE 3742, Embedded optical sensors and data processing for thin film deposition, 0000 (23 April 1999); doi: 10.1117/12.346246
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