Dr. Kazuaki Suzuki Profile

Dr. Kazuaki Suzuki

Excutive Staff at Tokyo Institute of Technology

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 10 March 2010 Paper

Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

Tsuyoshi Toki, Pavel Izikson, Junichi Kosugi, Naruo Sakasai, Keiko Saotome, Kazuaki Suzuki, Daniel Kandel, John Robinson, Yuji Koyanagi

Proceedings Volume 7640, 764016 (2010) https://doi.org/10.1117/12.846413

KEYWORDS: Semiconducting wafers, Control systems, Finite element methods, Critical dimension metrology, Error analysis, Scanners, Neural networks, Scatter measurement, Scatterometry, Data modeling

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SPIE Journal Paper | 1 October 2009 Open Access

Guest Editorial: Extreme Ultraviolet Lithography

Kevin Cummings, Kazuaki Suzuki

JM3, Vol. 8, Issue 04, 040901, (October 2009) https://doi.org/10.1117/12.10.1117/1.3272639

KEYWORDS: Extreme ultraviolet lithography, Lithography, Integrated circuits, Scanners, Manufacturing, Photomasks, Electronic design automation, Optics manufacturing, Chemical elements, X-ray lithography

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Proceedings Article | 26 March 2008 Paper

Nikon EUVL development progress update

Takaharu Miura, Katsuhiko Murakami, Kazuaki Suzuki, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo, Hidemi Kawai

Proceedings Volume 6921, 69210M (2008) https://doi.org/10.1117/12.772444

KEYWORDS: Extreme ultraviolet lithography, Projection systems, Reflectivity, Light sources, EUV optics, Photomasks, Extreme ultraviolet, Lithography, Reticles, Line edge roughness

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Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors. In this paper we would like to present our significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible, such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. Nikon has developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. The proto-type development of full-field projection optics has been successfully completed and its technical achievement has reflected into production optics. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has already developed dual pod reticle carrier for EUV1 tool. In parallel Nikon has been developing the same concept carrier for HVM in cooperation with Canon and Entegris. Regarding to EUV1 tool development, all modules of EUV1 such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, EUV light source module have been completed. Nikon has already started EUV1 module installation process and the module level function and basic performance have been being checked. Nikon will complete module integration to achieve the first exposure result. Some development results will be shown which lead to confidence for realization of EUVL. Nikon also would like to announce that development of 1st generation production EUVL tool named EUV2 has been studied.

Proceedings Article | 13 March 2007 Paper

Nikon EUVL development progress update

Takaharu Miura, Katsuhiko Murakami, Kazuaki Suzuki, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo

Proceedings Volume 6517, 651707 (2007) https://doi.org/10.1117/12.711267

KEYWORDS: Extreme ultraviolet lithography, Projection systems, Reticles, Light sources, Reflectivity, Extreme ultraviolet, Photomasks, EUV optics, Wavefront sensors, Semiconducting wafers

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Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors shown in Fig. 1. In this paper we would like to present significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA) in conjunction with EUVA (Extreme Ultraviolet Lithography System Development Association) projects, we have developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Wave front sensor system has been also developed partly in EUVA project. A new wave front sensor system which can be used for evaluating the projection optics with EUV light has already been installed in New SUBARU synchrotron facility in University of Hyogo. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted [8]. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. Proto-type development of full-field projection optics has been successfully completed and evaluated to be of enough performance. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has studied reticle protection method and developed Dual Pod Concept in cooperation with Canon. Nikon also has developed its own reticle cover to be implemented in EUV1 tool. Nikon has completed almost all module fabrication such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, and EUV light source module. Nikon has already got into module integration production process to meet EUV1 development schedule. Nikon announced to start EUV1 tool installation in 1st half of 2007 and has been proceeding it on schedule. Nikon also would like to announce that development of 1st generation production EUVL tool dubbed EUV2 is now considered and that system concept design is under way.

Proceedings Article | 10 March 2006 Paper

Nikon EUVL development progress summary

Takaharu Miura, Katsuhiko Murakami, Kazuaki Suzuki, Yoshiaki Kohama, Yukiharu Ohkubo, Takeshi Asami

Proceedings Volume 6151, 615105 (2006) https://doi.org/10.1117/12.656243

KEYWORDS: Extreme ultraviolet lithography, Reticles, Mirrors, Projection systems, Coating, Reflectivity, Polishing, Particles, EUV optics, Surface finishing

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Extreme Ultra Violet Lithography (EUVL) is considered as the most promising technology below hp45nm node, following ArF immersion lithography. In this paper we would like to present significant progress on the development of EUV exposure tool with recent encouraging data of mirror polishing accuracy and evaluation results of Nikon reticle protection concept. EUV exposure tool consists of major important modules such as EUV light source, projection optics, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA), our mirror polishing and metrology technologies of aspheric mirror surface and multi-layer coating technology have been remarkably improved and enable us to fabricate high-precision aspheric mirrors which meet the specification for EUV pre-production tools called EUV1. In the EUVA (Extreme Ultraviolet Lithography System Development Association) project, we have developed new polishing technologies such as ion-beam figuring and new high-precision interferometers for aspheric surface metrology. Wave front sensor systems have been also developed partly in EUVA project. Installation of a new wave front sensor system which can be used for evaluating the full-field projection optics with EUV light has already been started in New SUBARU synchrotron facility in University of Hyogo. EUV1 tool system design and its detailed design of all modules such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules have been completed. The results of development and prototyping of major modules such as vacuum stage modules and vacuum body module have been reflected in the actual tool design. Nikon has been also heavily involved in the infrastructure development such as mask handling development. In order to meet industry demands, Nikon has been already getting into EUV1 module fabrication phase. Nikon announces that EUV1 tool is scheduled to be delivered in 1^st half of 2007.

Proceedings Article | 6 May 2005 Paper

Nikon EPL tool: the latest development status and results

Takaharu Miura, Shintaro Kawata, Kazunari Hada, Yukio Kakizaki, Masaya Miyazaki, Kazuaki Suzuki, Noriyuki Hirayanagi, Atsushi Yamada, Junji Ikeda, Takehisa Yahiro, Jin Udagawa, Hidekazu Takekoshi, Takaaki Umemoto, Yukiharu Ohkubo, Toshimasa Shimoda, Toru Tanida, Yoichi Watanabe, Kaoru Ohmori, Futoshi Mori, Shigeru Takemoto, Takeshi Yoshioka, Kenji Morita

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.598687

KEYWORDS: Semiconducting wafers, Reticles, Electron beams, Wafer-level optics, Electron beam lithography, Photomasks, Control systems, Projection lithography, Lithography, Reliability

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Proceedings Article | 6 May 2005 Paper

Device based evaluation of electron projection lithography

Carmelo Romeo, Pietro Cantu, Daniel Henry, Hidekazu Takekoshi, Noriyuki Hirayanagi, Kazuaki Suzuki, Martin McCallum, Hiroshi Fujita, Tadahiko Takikawa, Morihisa Hoga

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.598751

KEYWORDS: Photomasks, Semiconducting wafers, Electron beam lithography, Optical lithography, Manufacturing, Etching, Projection lithography, Electron beams, Silicon, Printing

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Proceedings Article | 20 May 2004 Paper

Total performance of Nikon EB stepper R&D tool

Tomoharu Fujiwara, Noriyuki Hirayanagi, Jin Udagawa, Junji Ikeda, Sumito Shimizu, Hidekazu Takekoshi, Kazuaki Suzuki

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537008

KEYWORDS: Reticles, Semiconducting wafers, Electron beams, Distortion, Electron beam lithography, Optical alignment, Interferometers, Wafer-level optics, Scanning electron microscopy, Projection lithography

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Proceedings Article | 16 June 2003 Paper

Nikon EB stepper: its system design and preliminary performance

Noriyuki Hirayanagi, Tomoharu Fujiwara, Kazunari Hada, Toshimasa Shimoda, Kazuaki Suzuki

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484972

KEYWORDS: Reticles, Semiconducting wafers, Electron beams, Sensors, Servomechanisms, Image sensors, Electron beam lithography, Projection lithography, Beam controllers, Photography

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Proceedings Article | 16 June 2003 Paper

Distortion management strategy for EPL reticle

Hajime Yamamoto, Takashi Aoyama, Noriyuki Hirayanagi, Kazuaki Suzuki

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483743

KEYWORDS: Reticles, Distortion, Metrology, Semiconducting wafers, Sensors, Electron beam lithography, Data corrections, Photography, Manufacturing, Projection lithography

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Proceedings Article | 16 June 2003 Paper

CD controllability of proximity effect correction in EPL

Sumito Shimizu, Kazuaki Suzuki

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484724

KEYWORDS: Backscatter, Critical dimension metrology, Reticles, Semiconducting wafers, Photomasks, Image sensors, Artificial intelligence, Silicon, Photoresist processing, Data conversion

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Proceedings Article | 1 August 2002 Paper

EPL technology development

Kazuaki Suzuki

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476921

KEYWORDS: Reticles, Semiconducting wafers, Silicon, Electron beams, Critical dimension metrology, Sensors, Wafer-level optics, Optical alignment, Distortion, Electron beam lithography

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SPIE Journal Paper | 1 July 2002

High-accuracy aerial image measurement for electron beam projection lithography

Takehisa Yahiro, Noriyuki Hirayanagi, Takeshi Irita, Hiroyasu Shimizu, Kazuaki Suzuki

JM3, Vol. 1, Issue 02, (July 2002) https://doi.org/10.1117/12.10.1117/1.1451082

KEYWORDS: Signal detection, Image sensors, Calibration, Silicon, Sensors, Electron beams, Electron beam lithography, Signal to noise ratio, Optical testing, Projection lithography

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Proceedings Article | 20 August 2001 Paper

Highly accurate CD control at stitching region for electron-beam projection lithography

Tomoharu Fujiwara, Takeshi Irita, Sumito Shimizu, Hajime Yamamoto, Kazuaki Suzuki

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436696

KEYWORDS: Reticles, Critical dimension metrology, Semiconducting wafers, Projection lithography, Electron beams, Electron beam lithography, Scattering, Optical simulations, Scanning electron microscopy, Laser scattering

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Proceedings Article | 20 August 2001 Paper

Nikon EB Stepper: the latest development status

Kazuaki Suzuki, Tomoharu Fujiwara, Kazunari Hada, Noriyuki Hirayanagi, Shintaro Kawata, Kenji Morita, Kazuya Okamoto, Teruaki Okino, Sumito Shimizu, Takehisa Yahiro, Hajime Yamamoto

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436632

KEYWORDS: Reticles, Semiconducting wafers, Electron beams, Silicon, Sensors, Optical alignment, Optical lithography, Photomasks, Wafer-level optics, Image sensors

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Proceedings Article | 20 August 2001 Paper

High-accuracy aerial image measurement for electron-beam projection lithography

Takehisa Yahiro, Noriyuki Hirayanagi, Kenji Morita, Takeshi Irita, Hajime Yamamoto, Shohei Suzuki, Hiroyasu Shimizu, Shintaro Kawata, Teruaki Okino, Kazuaki Suzuki

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436679

KEYWORDS: Image sensors, Signal detection, Calibration, Sensors, Signal to noise ratio, Silicon, Monochromatic aberrations, Electron beams, Projection lithography, Electron beam lithography

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Proceedings Article | 21 July 2000 Paper

Nikon EB stepper: its system concept and countermeasures for critical issues

Kazuaki Suzuki, Tomoharu Fujiwara, Kazunari Hada, Noriyuki Hirayanagi, Shintaro Kawata, Kenji Morita, Kazuya Okamoto, Teruaki Okino, Sumito Shimizu, Takehisa Yahiro

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390057

KEYWORDS: Reticles, Semiconducting wafers, Silicon, Electron beams, Critical dimension metrology, Electron beam lithography, Scattering, Wafer-level optics, Sensors, Optical alignment

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Proceedings Article | 21 July 2000 Paper

Investigation of proximity effect correction in electron projection lithography (EPL)

Teruaki Okino, Kazuaki Suzuki, Kazuya Okamoto, Shintaro Kawata, Kiyoshi Uchikawa, Syouhei Suzuki, Sumito Shimizu, Tomoharu Fujiwara, Atsushi Yamada, Koichi Kamijo

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390059

KEYWORDS: Reticles, Semiconducting wafers, Lithography, Electron beam lithography, Projection lithography, Silicon, Scattering, Electron beams, Backscatter, Computer aided design

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Proceedings Article | 21 July 2000 Paper

Data of scattered electron characteristics in 100-kV EB stepper

Kenji Morita, Takehisa Yahiro, Sumito Shimizu, Hajime Yamamoto, Noriyuki Hirayanagi, Tomoharu Fujiwara, Syouhei Suzuki, Hiroyasu Shimizu, Shintaro Kawata, Teruaki Okino, Kazuaki Suzuki

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390111

KEYWORDS: Reticles, Scattering, Silicon, Semiconducting wafers, Laser scattering, Electron beams, Monte Carlo methods, Lithography, Calibration, Optical alignment

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Proceedings Article | 7 June 1996 Paper

KrF step-and-scan exposure system using higher-NA projection lens

Kazuaki Suzuki, Shinji Wakamoto, Kenji Nishi

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240938

KEYWORDS: Semiconducting wafers, Reticles, Interferometers, Optical alignment, Excimer lasers, Distortion, Tolerancing, Optical scanning systems, Control systems, Error control coding

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