Dr. Kazuaki Suzuki Profile

Dr. Kazuaki Suzuki

Excutive Staff at Nikon Corp

SPIE Involvement:

Conference Program Committee | Author

Publications (20)

PROCEEDINGS ARTICLE | March 10, 2010

Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

Proc. SPIE. 7640, Optical Microlithography XXIII

KEYWORDS: Data modeling, Scanners, Error analysis, Control systems, Scatterometry, Finite element methods, Neural networks, Critical dimension metrology, Semiconducting wafers, Scatter measurement

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SPIE Journal Paper | October 1, 2009

Guest Editorial: Extreme Ultraviolet Lithography

Cummings, Kevin , Suzuki, Kazuaki

JM3 Vol. 8 Issue 04

KEYWORDS: Extreme ultraviolet lithography, Lithography, Integrated circuits, Scanners, Manufacturing, Photomasks, Electronic design automation, Optics manufacturing, Chemical elements, X-ray lithography

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PROCEEDINGS ARTICLE | March 26, 2008

Nikon EUVL development progress update

Proc. SPIE. 6921, Emerging Lithographic Technologies XII

KEYWORDS: Lithography, Light sources, Reticles, Reflectivity, Projection systems, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Line edge roughness, EUV optics

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Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors. In this paper we would like to present our significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible, such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. Nikon has developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. The proto-type development of full-field projection optics has been successfully completed and its technical achievement has reflected into production optics. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has already developed dual pod reticle carrier for EUV1 tool. In parallel Nikon has been developing the same concept carrier for HVM in cooperation with Canon and Entegris. Regarding to EUV1 tool development, all modules of EUV1 such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, EUV light source module have been completed. Nikon has already started EUV1 module installation process and the module level function and basic performance have been being checked. Nikon will complete module integration to achieve the first exposure result. Some development results will be shown which lead to confidence for realization of EUVL. Nikon also would like to announce that development of 1st generation production EUVL tool named EUV2 has been studied.

PROCEEDINGS ARTICLE | March 13, 2007

Nikon EUVL development progress update

Proc. SPIE. 6517, Emerging Lithographic Technologies XI

KEYWORDS: Light sources, Reticles, Reflectivity, Wavefront sensors, Projection systems, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, EUV optics

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Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors shown in Fig. 1. In this paper we would like to present significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA) in conjunction with EUVA (Extreme Ultraviolet Lithography System Development Association) projects, we have developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Wave front sensor system has been also developed partly in EUVA project. A new wave front sensor system which can be used for evaluating the projection optics with EUV light has already been installed in New SUBARU synchrotron facility in University of Hyogo. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted [8]. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. Proto-type development of full-field projection optics has been successfully completed and evaluated to be of enough performance. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has studied reticle protection method and developed Dual Pod Concept in cooperation with Canon. Nikon also has developed its own reticle cover to be implemented in EUV1 tool. Nikon has completed almost all module fabrication such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, and EUV light source module. Nikon has already got into module integration production process to meet EUV1 development schedule. Nikon announced to start EUV1 tool installation in 1st half of 2007 and has been proceeding it on schedule. Nikon also would like to announce that development of 1st generation production EUVL tool dubbed EUV2 is now considered and that system concept design is under way.

PROCEEDINGS ARTICLE | March 10, 2006

Nikon EUVL development progress summary

Proc. SPIE. 6151, Emerging Lithographic Technologies X

KEYWORDS: Mirrors, Reticles, Polishing, Particles, Coating, Reflectivity, Projection systems, Extreme ultraviolet lithography, Surface finishing, EUV optics

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Extreme Ultra Violet Lithography (EUVL) is considered as the most promising technology below hp45nm node, following ArF immersion lithography. In this paper we would like to present significant progress on the development of EUV exposure tool with recent encouraging data of mirror polishing accuracy and evaluation results of Nikon reticle protection concept. EUV exposure tool consists of major important modules such as EUV light source, projection optics, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA), our mirror polishing and metrology technologies of aspheric mirror surface and multi-layer coating technology have been remarkably improved and enable us to fabricate high-precision aspheric mirrors which meet the specification for EUV pre-production tools called EUV1. In the EUVA (Extreme Ultraviolet Lithography System Development Association) project, we have developed new polishing technologies such as ion-beam figuring and new high-precision interferometers for aspheric surface metrology. Wave front sensor systems have been also developed partly in EUVA project. Installation of a new wave front sensor system which can be used for evaluating the full-field projection optics with EUV light has already been started in New SUBARU synchrotron facility in University of Hyogo. EUV1 tool system design and its detailed design of all modules such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules have been completed. The results of development and prototyping of major modules such as vacuum stage modules and vacuum body module have been reflected in the actual tool design. Nikon has been also heavily involved in the infrastructure development such as mask handling development. In order to meet industry demands, Nikon has been already getting into EUV1 module fabrication phase. Nikon announces that EUV1 tool is scheduled to be delivered in 1^st half of 2007.

PROCEEDINGS ARTICLE | May 6, 2005

Device based evaluation of electron projection lithography

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Electron beam lithography, Electron beams, Optical lithography, Etching, Silicon, Manufacturing, Printing, Photomasks, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | May 6, 2005

Nikon EPL tool: the latest development status and results

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Wafer-level optics, Lithography, Electron beam lithography, Electron beams, Reticles, Reliability, Control systems, Photomasks, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | May 20, 2004

Total performance of Nikon EB stepper R&D tool

Proc. SPIE. 5374, Emerging Lithographic Technologies VIII

KEYWORDS: Wafer-level optics, Electron beam lithography, Electron beams, Reticles, Interferometers, Distortion, Scanning electron microscopy, Optical alignment, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | June 16, 2003

Nikon EB stepper: its system design and preliminary performance

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Electron beam lithography, Electron beams, Reticles, Sensors, Photography, Image sensors, Servomechanisms, Semiconducting wafers, Projection lithography, Beam controllers

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PROCEEDINGS ARTICLE | June 16, 2003

Distortion management strategy for EPL reticle

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Electron beam lithography, Reticles, Metrology, Sensors, Photography, Manufacturing, Distortion, Semiconducting wafers, Data corrections, Projection lithography

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PROCEEDINGS ARTICLE | June 16, 2003

CD controllability of proximity effect correction in EPL

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Reticles, Backscatter, Silicon, Image sensors, Photomasks, Artificial intelligence, Critical dimension metrology, Data conversion, Photoresist processing, Semiconducting wafers

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PROCEEDINGS ARTICLE | August 1, 2002

EPL technology development

Proc. SPIE. 4754, Photomask and Next-Generation Lithography Mask Technology IX

KEYWORDS: Wafer-level optics, Electron beam lithography, Electron beams, Reticles, Sensors, Silicon, Distortion, Optical alignment, Critical dimension metrology, Semiconducting wafers

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SPIE Journal Paper | July 1, 2002

High-accuracy aerial image measurement for electron beam projection lithography

Yahiro, Takehisa , Hirayanagi, Noriyuki , Irita, Takeshi , Shimizu, Hiroyasu , Suzuki, Kazuaki

JM3 Vol. 1 Issue 02

KEYWORDS: Signal detection, Image sensors, Calibration, Silicon, Sensors, Electron beams, Electron beam lithography, Signal to noise ratio, Optical testing, Projection lithography

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PROCEEDINGS ARTICLE | August 20, 2001

Nikon EB Stepper: the latest development status

Proc. SPIE. 4343, Emerging Lithographic Technologies V

KEYWORDS: Wafer-level optics, Electron beams, Reticles, Optical lithography, Sensors, Silicon, Image sensors, Photomasks, Optical alignment, Semiconducting wafers

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PROCEEDINGS ARTICLE | August 20, 2001

High-accuracy aerial image measurement for electron-beam projection lithography

Proc. SPIE. 4343, Emerging Lithographic Technologies V

KEYWORDS: Signal to noise ratio, Electron beam lithography, Monochromatic aberrations, Electron beams, Sensors, Calibration, Silicon, Image sensors, Signal detection, Projection lithography

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PROCEEDINGS ARTICLE | August 20, 2001

Highly accurate CD control at stitching region for electron-beam projection lithography

Proc. SPIE. 4343, Emerging Lithographic Technologies V

KEYWORDS: Electron beam lithography, Electron beams, Reticles, Scattering, Laser scattering, Scanning electron microscopy, Optical simulations, Critical dimension metrology, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | July 21, 2000

Investigation of proximity effect correction in electron projection lithography (EPL)

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Lithography, Electron beam lithography, Electron beams, Reticles, Backscatter, Scattering, Silicon, Computer aided design, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | July 21, 2000

Data of scattered electron characteristics in 100-kV EB stepper

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Lithography, Electron beams, Reticles, Scattering, Calibration, Silicon, Laser scattering, Monte Carlo methods, Optical alignment, Semiconducting wafers

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PROCEEDINGS ARTICLE | July 21, 2000

Nikon EB stepper: its system concept and countermeasures for critical issues

Proc. SPIE. 3997, Emerging Lithographic Technologies IV

KEYWORDS: Wafer-level optics, Electron beam lithography, Electron beams, Reticles, Scattering, Sensors, Silicon, Optical alignment, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | June 7, 1996

KrF step-and-scan exposure system using higher-NA projection lens

Proc. SPIE. 2726, Optical Microlithography IX

KEYWORDS: Reticles, Interferometers, Control systems, Distortion, Excimer lasers, Optical alignment, Optical scanning systems, Error control coding, Semiconducting wafers, Tolerancing

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