Mr. Niels Vergeer Profile

Niels Vergeer

at Mapper Lithography

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Author

Publications (4)

Proceedings Article | 27 April 2017 Presentation

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

Ludovic Lattard, Isabelle Servin, Jonathan Pradelles, Yoann Blancquaert, Guido Rademaker, Laurent Pain, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco J. Jager, Jerry J. Peijster, Erwin Slot, Stijn W. H. Steenbrink, Niels Vergeer, Marco Wieland

Proceedings Volume 10144, 101440N (2017) https://doi.org/10.1117/12.2260878

KEYWORDS: Semiconducting wafers, Lithography, Electron beam lithography, Photomasks, Switching, Electron beams, Lithographic illumination, Integrated optics, Optical alignment, Wafer-level optics

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Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Proceedings Article | 2 April 2014 Paper

Handling, clamping, and alignment evaluation for multi-beam technology on Matrix1.1 platform

Ludovic Lattard, Jonathan Pradelles, Niels Vergeer, Erwin Slot, Laurent Pain, Erik de Jong, Gianpaolo Torriani, Charles Pieczulewski

Proceedings Volume 9050, 90502E (2014) https://doi.org/10.1117/12.2046233

KEYWORDS: Semiconducting wafers, Optical alignment, Lithography, Sensors, Cooling systems, Electron beam lithography, Interferometers, Manufacturing, Electron beams, Interfaces

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Proceedings Article | 26 March 2013 Paper

MAPPER alignment sensor evaluation on process wafers

N. Vergeer, L. Lattard, G. de Boer, F. Couweleers, D. Dave, J. Pradelles, J. Bustos

Proceedings Volume 8680, 86801E (2013) https://doi.org/10.1117/12.2011402

KEYWORDS: Optical alignment, Semiconducting wafers, Sensors, Reflectivity, Reflection, System on a chip, Lithography, Wafer-level optics, Silicon, Maskless lithography

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Proceedings Article | 2 April 2011 Paper

Scanning exposures with a MAPPER multibeam system

C. van den Berg, G. de Boer, S. Boschker, E. Hakkennes, G. Holgate, M. Hoving, R. Jager, J. Koning, V. Kuiper, Yue Ma, I. van Mil, H. W. Mook, T. Ooms, T. van de Peut, S. Postma, M. Sanderse, P. Scheffers, E. Slot, A. Tudorie, A. M. Valkering, N. Venema, N. Vergeer, A. Weirsma, S. Woutersen, M. Wieland, B. Kampherbeek

Proceedings Volume 7970, 79700D (2011) https://doi.org/10.1117/12.881572

KEYWORDS: Interferometers, Electron beams, Optical testing, Semiconducting wafers, Error analysis, Lithography, Sensors, Wafer-level optics, Control systems, Chemically amplified resists

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