Dr. Isabelle Servin Profile

Dr. Isabelle Servin

at CEA-LETI

SPIE Involvement:

Author

Publications (26)

PROCEEDINGS ARTICLE | September 19, 2018

Performance validation of Mapper FLX-1200

Proc. SPIE. 10775, 34th European Mask and Lithography Conference

KEYWORDS: Lithography, Electron beams, Silicon, Scanning electron microscopy, Optical scanning, Line width roughness, Optical alignment, Semiconducting wafers, Prototyping, Overlay metrology

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PROCEEDINGS ARTICLE | March 19, 2018

Process development of a maskless N40 via level for security application with multi-beam lithography

Proc. SPIE. 10584, Novel Patterning Technologies 2018

KEYWORDS: Lithography, Electron beam lithography, Etching, Metals, Copper, Scanning electron microscopy, Optical alignment, Semiconducting wafers, System on a chip, Back end of line

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PROCEEDINGS ARTICLE | March 19, 2018

Performance validation of Mapper's FLX-1200

Proc. SPIE. 10584, Novel Patterning Technologies 2018

KEYWORDS: Electron beam lithography, Electron beams, Line width roughness, Optical alignment, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | April 27, 2017

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

Proc. SPIE. 10144, Emerging Patterning Technologies

KEYWORDS: Wafer-level optics, Lithography, Electron beam lithography, Electron beams, Switching, Lithographic illumination, Photomasks, Integrated optics, Optical alignment, Semiconducting wafers

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Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

PROCEEDINGS ARTICLE | April 10, 2017

Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges

Proc. SPIE. 10149, Advanced Etch Technology for Nanopatterning VI

KEYWORDS: Lithography, Electron beam lithography, Etching, Line width roughness, Directed self assembly, Nanoimprint lithography, Critical dimension metrology, Photoresist processing, Semiconducting wafers, System on a chip

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PROCEEDINGS ARTICLE | March 27, 2017

DSA process window expansion with novel DSA track hardware

Proc. SPIE. 10146, Advances in Patterning Materials and Processes XXXIV

KEYWORDS: Optical lithography, Polymers, Annealing, Oxygen, Scanning electron microscopy, Line width roughness, Directed self assembly, Thin film coatings, Semiconducting wafers, Atmospheric modeling

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PROCEEDINGS ARTICLE | March 27, 2017

A high chi track-compatible DSA for sub-10nm L/S patterning

Proc. SPIE. 10146, Advances in Patterning Materials and Processes XXXIV

KEYWORDS: Optical lithography, Polymers, Glasses, Ultraviolet radiation, Annealing, Silicon, Scanning electron microscopy, Line width roughness, Directed self assembly, Semiconducting wafers

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PROCEEDINGS ARTICLE | April 1, 2016

Investigation of coat-develop track system for placement error of contact hole shrink process

Proc. SPIE. 9777, Alternative Lithographic Technologies VIII

KEYWORDS: Lithography, Optical lithography, Etching, Image processing, Annealing, Scanning electron microscopy, Distance measurement, Directed self assembly, Immersion lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 22, 2016

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

Proc. SPIE. 9777, Alternative Lithographic Technologies VIII

KEYWORDS: Lithography, Electron beam lithography, Electron beams, Etching, Silicon, Scanning electron microscopy, Line width roughness, Neodymium, Semiconducting wafers, Surface conduction electron emitter displays

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PROCEEDINGS ARTICLE | March 22, 2016

Process highlights to enhance DSA contact patterning performances

Proc. SPIE. 9777, Alternative Lithographic Technologies VIII

KEYWORDS: Lithography, Optical lithography, Defect detection, Etching, Image processing, Annealing, Materials processing, Inspection, Scanning electron microscopy, Photomasks, Directed self assembly, Picosecond phenomena, Critical dimension metrology, Semiconducting wafers, Molecular self-assembly

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PROCEEDINGS ARTICLE | March 19, 2015

"Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study

Proc. SPIE. 9423, Alternative Lithographic Technologies VII

KEYWORDS: Lithography, Electron beam lithography, Point spread functions, Etching, Silicon, 3D modeling, Scanning electron microscopy, Monte Carlo methods, Information technology, Critical dimension metrology

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PROCEEDINGS ARTICLE | March 19, 2015

Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack

Proc. SPIE. 9423, Alternative Lithographic Technologies VII

KEYWORDS: Lithography, Electron beam lithography, Etching, Metals, Silicon, Resistance, Scanning electron microscopy, Extreme ultraviolet, Line width roughness, System on a chip

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PROCEEDINGS ARTICLE | March 17, 2015

DSA planarization approach to solve pattern density issue

Proc. SPIE. 9428, Advanced Etch Technology for Nanopatterning IV

KEYWORDS: Polymethylmethacrylate, Etching, Dry etching, Chemistry, Scanning electron microscopy, Directed self assembly, Picosecond phenomena, Critical dimension metrology, Semiconducting wafers, Carbon monoxide

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PROCEEDINGS ARTICLE | March 28, 2014

Etch challenges for DSA implementation in CMOS via patterning

Proc. SPIE. 9054, Advanced Etch Technology for Nanopatterning III

KEYWORDS: Optical lithography, Polymethylmethacrylate, Etching, Argon, Dry etching, Dielectrics, Chemistry, Directed self assembly, Picosecond phenomena, Plasma

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PROCEEDINGS ARTICLE | March 28, 2014

300mm pilot line DSA contact hole process stability

Proc. SPIE. 9049, Alternative Lithographic Technologies VI

KEYWORDS: Semiconductors, Lithography, Electron beam lithography, Polymethylmethacrylate, Etching, Silicon, Directed self assembly, High volume manufacturing, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 26, 2013

The potential of block copolymer’s directed self-assembly for contact hole shrink and contact multiplication

Proc. SPIE. 8680, Alternative Lithographic Technologies V

KEYWORDS: Lithography, Polymethylmethacrylate, Etching, Polymers, Oxygen, Directed self assembly, Picosecond phenomena, Critical dimension metrology, Neodymium, 193nm lithography

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PROCEEDINGS ARTICLE | May 19, 2011

193-nm radiation durability study of MoSi binary mask and resulting lithographic performance

Proc. SPIE. 8081, Photomask and Next-Generation Lithography Mask Technology XVIII

KEYWORDS: Lithography, Metrology, Cadmium, Scattering, Scanners, Photomasks, SRAF, Critical dimension metrology, Semiconducting wafers, Binary data

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PROCEEDINGS ARTICLE | September 25, 2010

Aging study in advanced photomasks: impact of EFM effects on lithographic performance with MoSi binary and 6% attenuated PSM masks

Proc. SPIE. 7823, Photomask Technology 2010

KEYWORDS: Lithography, Reticles, Metrology, Scanners, Scanning electron microscopy, Photomasks, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Binary data

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PROCEEDINGS ARTICLE | May 27, 2009

Mask contribution on CD and OVL errors budgets for double patterning lithography

Proc. SPIE. 7470, 25th European Mask and Lithography Conference

KEYWORDS: Lithography, Reticles, Scanners, Image registration, Pellicles, Photomasks, Double patterning technology, Optical alignment, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 11, 2009

European MEDEA+ CRYSTAL project: DFM photomasks inputs for EDA workflow task force

Proc. SPIE. 7379, Photomask and Next-Generation Lithography Mask Technology XVI

KEYWORDS: Lithography, Databases, Silicon, Manufacturing, Inspection, Design for manufacturing, Photomasks, Computer aided design, Electronic design automation, Design for manufacturability

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PROCEEDINGS ARTICLE | March 16, 2009

Impact of CD and overlay errors on double-patterning processes

Proc. SPIE. 7274, Optical Microlithography XXII

KEYWORDS: Lithography, Reticles, Etching, Image processing, Photomasks, Line width roughness, Double patterning technology, Photoresist processing, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | March 16, 2009

Integration of dry etching steps for double patterning and spacer patterning processes

Proc. SPIE. 7274, Optical Microlithography XXII

KEYWORDS: Carbon, Lithography, Optical lithography, Etching, Chemistry, Scanning electron microscopy, Photomasks, Double patterning technology, Critical dimension metrology, Plasma

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SPIE Journal Paper | January 1, 2009

Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

Hazelton, Andrew , Wakamoto, Shinji , Hirukawa, Shigeru , McCallum, Martin , Magome, Nobutaka , Ishikawa, Jun , Lapeyre, Céline , Guilmeau, Isabelle , Barnola, Sébastien , Gaugiran, Stéphanie

JM3 Vol. 8 Issue 01

KEYWORDS: Double patterning technology, Photomasks, Etching, Reticles, Lithography, Optical lithography, Semiconducting wafers, Image processing, Photoresist processing, Deposition processes

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PROCEEDINGS ARTICLE | March 7, 2008

Double patterning requirements for optical lithography and prospects for optical extension without double patterning

Proc. SPIE. 6924, Optical Microlithography XXI

KEYWORDS: Lithography, Reticles, Optical lithography, Etching, Image processing, Photomasks, Double patterning technology, Deposition processes, Photoresist processing, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 4, 2005

Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Oxides, Carbon, Optical lithography, Etching, Dielectrics, Reflectivity, Chemical vapor deposition, Line width roughness, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 14, 2004

Evaluation of wet-developable KrF organic BARC to improve CD uniformity for implant application

Proc. SPIE. 5376, Advances in Resist Technology and Processing XXI

KEYWORDS: Oxides, Lithography, Optical lithography, Silicon, Electroluminescence, Scanning electron microscopy, Scatterometry, Critical dimension metrology, Photoresist processing, Semiconducting wafers

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Showing 5 of 26 publications

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