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13 June 2022 Resist shrink characterization methodology for more accurate CD metrology
Mary A. Breton, Karen Petrillo, Jennifer Church, Luciana Meli, Jennifer Fullam, Stuart Sieg, Romain Lallement, Nelson Felix, Shimon Levi, Susan Zollinger, Felix Levitov, Sean Hand, Jason Osborne, Weijie Wang
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Proceedings Volume PC12053, Metrology, Inspection, and Process Control XXXVI; PC120530C (2022) https://doi.org/10.1117/12.2614219
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Abstract
This work proposes a methodology to characterize the extent of photoresists’ CD shrink from various SEM landing energy and imaging conditions, using both AFM metrology and post-etch pattern transfer as methods to evaluate the true physical CD. The resist shrink for both 1D and 2D features with varying resist volumes can be quantified through the various metrology techniques and post-etch dimensional data. Once characterized, material response during SEM exposure can be accounted for in any CDSEM data comparison or OPC model.
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Mary A. Breton, Karen Petrillo, Jennifer Church, Luciana Meli, Jennifer Fullam, Stuart Sieg, Romain Lallement, Nelson Felix, Shimon Levi, Susan Zollinger, Felix Levitov, Sean Hand, Jason Osborne, and Weijie Wang "Resist shrink characterization methodology for more accurate CD metrology", Proc. SPIE PC12053, Metrology, Inspection, and Process Control XXXVI, PC120530C (13 June 2022); https://doi.org/10.1117/12.2614219
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KEYWORDS
Critical dimension metrology
Metrology
Scanning electron microscopy
Optical proximity correction
Photoresist materials
Data modeling
Process modeling
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