High-NA EUV photoresist metrology using high-throughput scanning probe microscopy

M. Mucientes; A. Khachaturiants; R. Trussell; A. Kalinin; Y. Guo; E. C. Simons; S. Kim; O. Nadyarnykh; A. Moussa; J. Bogdanowicz; J. Severi; G. Lorusso; D. De Simone; A.-L. Charley; P. Leray; M. E. van Reijzen; C. Bozdog; H. Sadeghian

doi:10.1117/12.2641698

15 September 2022 High-NA EUV photoresist metrology using high-throughput scanning probe microscopy

M. Mucientes, A. Khachaturiants, R. Trussell, A. Kalinin, Y. Guo, E. C. Simons, S. Kim, O. Nadyarnykh, A. Moussa, J. Bogdanowicz, J. Severi, G. Lorusso, D. De Simone, A.-L. Charley, P. Leray, M. E. van Reijzen, C. Bozdog, H. Sadeghian

Author Affiliations +

Proceedings Volume 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 123250M (2022) https://doi.org/10.1117/12.2641698
Event: Photomask Japan 2022, 2022, Online Only

Abstract

High-NA EUV technology enables cost-effective patterning below the 5nm node. The integration is simpler but still requires multiple innovations. Thinner resists are needed for single-patterning enablement. The decrease in thickness poses a challenge for traditional metrology and inspection systems like OCD or CD-SEM, which lose sensitivity due to diminishing interaction volume. The reverse is true for Scanning Probe Microscopy, which excels in the low-height patterning regime. Here we discuss patterning metrology and introduce defect inspection / review applications for High-NA EUV patterning using a high-throughput SPM.

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M. Mucientes, A. Khachaturiants, R. Trussell, A. Kalinin, Y. Guo, E. C. Simons, S. Kim, O. Nadyarnykh, A. Moussa, J. Bogdanowicz, J. Severi, G. Lorusso, D. De Simone, A.-L. Charley, P. Leray, M. E. van Reijzen, C. Bozdog, and H. Sadeghian "High-NA EUV photoresist metrology using high-throughput scanning probe microscopy", Proc. SPIE 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 123250M (15 September 2022); https://doi.org/10.1117/12.2641698

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