3D mask modeling for EUV lithography

Julien Mailfert; Christian Zuniga; Vicky Philipsen; Konstantinos Adam; Michael Lam; James Word; Eric Hendrickx; Geert Vandenberghe; Bruce Smith

doi:10.1117/12.918267

23 March 2012 3D mask modeling for EUV lithography

Julien Mailfert, Christian Zuniga, Vicky Philipsen, Konstantinos Adam, Michael Lam, James Word, Eric Hendrickx, Geert Vandenberghe, Bruce Smith

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 832224 (2012) https://doi.org/10.1117/12.918267
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

In this work, 3D mask modeling capabilities of Calibre will be used to assess mask topography impact on EUV imaging. The EUV mask absorber height and the non-telecentric illumination at mask level, modulate the captured intensity from the shadowed mask area through the reflective optics on to the wafer, named as the mask shadowing effect. On the other hand, thinning the mask absorber height results in unwanted background intensity, or called flare. A true compromise has to be taken into account for the height parameter of a EUV mask absorber. We will discuss the state-of-the-art 3D mask modeling capabilities, and will present methodologies to tackle the described EUV mask shadowing effect in Calibre software. The findings will be validated against experiments on ASML's NXE:3100 EUV scanner at imec. Masks with two different absorber heights will be evaluated on various combinations of features containing line/space and contact-hole.

Citation Download Citation

Julien Mailfert, Christian Zuniga, Vicky Philipsen, Konstantinos Adam, Michael Lam, James Word, Eric Hendrickx, Geert Vandenberghe, and Bruce Smith "3D mask modeling for EUV lithography", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832224 (23 March 2012); https://doi.org/10.1117/12.918267

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