Dr. Bruce W. Smith
Director, Microsystems Engineering at Rochester Institute of Technology
SPIE Involvement:
Awards Committee | Fellow status | Conference Program Committee | Symposium Chair | Conference Chair | Conference Co-Chair | Author | Editor | Instructor
Publications (123)

SPIE Journal Paper | June 19, 2017
JM3 Vol. 16 Issue 02
KEYWORDS: Systems modeling, Data modeling, Lithography, Tolerancing, Binary data, Photomasks, Image transmission, Semiconductors, Reticles

PROCEEDINGS ARTICLE | March 24, 2017
Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII
KEYWORDS: Lithography, Monochromatic aberrations, Metrology, Principal component analysis, Patents, Image resolution, Wavefronts, Image analysis, Zernike polynomials, Objectives, Extreme ultraviolet, Extreme ultraviolet lithography, Spherical lenses, Binary data, EUV optics

SPIE Journal Paper | June 28, 2016
JM3 Vol. 15 Issue 02
KEYWORDS: Zernike polynomials, Extreme ultraviolet lithography, Extreme ultraviolet, Monochromatic aberrations, Imaging systems, Photomasks, Wavefronts, Metrology, Microscopes, Statistical analysis

PROCEEDINGS ARTICLE | March 18, 2016
Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII
KEYWORDS: Lithography, Monochromatic aberrations, Metrology, Principal component analysis, Data modeling, Image processing, Wavefronts, Computer simulations, Image analysis, Software development, Image filtering, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Photomicroscopy

PROCEEDINGS ARTICLE | March 18, 2016
Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII
KEYWORDS: Lithography, Diffraction, Monochromatic aberrations, Point spread functions, Deep ultraviolet, 3D modeling, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Systems modeling, 3D image processing, Phase shifts

PROCEEDINGS ARTICLE | March 18, 2016
Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII
KEYWORDS: Semiconductors, Lithography, Monochromatic aberrations, Metrology, Principal component analysis, Detection and tracking algorithms, Data modeling, Image processing, Interferometry, Computer simulations, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Systems modeling

Showing 5 of 123 publications
Conference Committee Involvement (21)
Optical Microlithography XXXI
27 February 2018 | San Jose, California, United States
SPIE Advanced Lithography
25 February 2018 | San Jose, United States
Optical Microlithography XXX
28 February 2017 | San Jose, California, United States
SPIE Advanced Lithography
26 February 2017 | San Jose, United States
Optical Microlithography XXIX
23 February 2016 | San Jose, California, United States
Showing 5 of 21 published special sections
Course Instructor
SC117: The Fundamental Limits of Optical Lithography
This course covers the capabilities and challenges in optical lithography using practical approaches to understand basic scientific and engineering principles. Using fundamental concepts, practical examples, and optical demonstrations, the limits of optical lithography are defined and explored. As optical lithography is pushed beyond classical limits, an understanding of imaging from a dimensional description (of the mask and wafer) as well as a spatial frequency perspective (of the optics) becomes necessary. This course will develop the connection between the two to describe fundamental optical limits and relationships. The consequences of variations in NA, changing coherence (sigma), implementing optical enhancements (including phase shift masking, off-axis illumination, and optical proximity correction), and the influence of aberrations will be presented iusing an intuitive approach. The goal is to develop a fundamental and intuitive understanding of topics related to diffraction by a photomask, collection by an optical system, and imaging into a photoresist. Fourier spectral analysis, coherency theory, lens interaction, aberration concepts, and image enhancement are describe in fairly simple terms and several optical demonstrations help develop the concepts. This course is the first of a two-part sequence but both parts don't need to be taken.
SC124: Pushing the Limits: Hyper-NA, Immersion, Polarization, and Pitch Division (Double Patterning) in Optical Lithography
This stand-alone course covers the extension of optical microlithography concepts that can follow the "The Fundamental Limits of Optical Lithography" course, SC117. Topics covered relate to current and future hyper-NA imaging that allows for applicaion into sub-45nm device generations. With the advent of immersion lithography, improvements in resolution and focal depth are made possible. The potential of this technology will be covered, along with the implications of large angle imaging and polarization (both benefits and detriments) along with methods to control large angle effects. This course extends on fundamental concepts of optical lithography by expanding the spatial frequency description of imaging and allowing for an intuitive understanding of the technologies involved. A more complete description of optical imaging processes is also pursued with discussions of feature and pitch specific illumination, optical proximity correction (high and low order), phase-masking, and aberration compensation. Finally, concepts of pitch division (i.e. double patterning) will be explored to understand the practical limits of optical lithography, possibly to 22 nm device generations. Attendees will learn how far we can go, what is tolerable, and what must be sacrificed to push optical lithography as far as possible. Several optical demonstrations will help to develop an intuitive sense of the concepts.
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