Dr. Michael C. Lam Profile

Dr. Michael C. Lam

Director of R&D at Synopsys

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 4 April 2019 Paper

Using machine learning in the physical modeling of lithographic processes

Kostas Adam, Shashidhara Ganjugunte, Clement Moyroud, Kostya Shchehlik, Michael Lam, Andrew Burbine, Germain Fenger, Yuri Granik

Proceedings Volume 10962, 109620F (2019) https://doi.org/10.1117/12.2519848

KEYWORDS: Neural networks, Machine learning, Systems modeling, Optical proximity correction, Data modeling, Process modeling, Calibration, Lithography, Cadmium, Coastal modeling

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Proceedings Article | 16 October 2017 Paper

Edge placement errors in EUV from aberration variation

Ananthan Raghunathan, Germain Fenger, Michael Lam, Chris Clifford, Kostas Adam, John Sturtevant

Proceedings Volume 10451, 104510W (2017) https://doi.org/10.1117/12.2280609

KEYWORDS: Optical proximity correction, Wavefronts, Extreme ultraviolet, Scanners, Photomasks, Error analysis, Extreme ultraviolet lithography, Manufacturing, 3D modeling, Tolerancing

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With several foundries/IDMs committed to using EUV to manufacture devices at the 7 nm and 5 nm nodes, the success of EUVL will depend critically on the ability of manufacturers to meet extremely tight edge placement error (EPE) budgets. EPE is affected by many factors and it becomes important to identify and address all systematic sources of edge placement error. One major source of this error, which hasn’t been given a lot of attention, continues to be the magnitude and variation of aberrations across the exposure field and between different scanners. EUV scanners are known to have significantly higher level of aberrations than DUV scanners due to the substantial drop in wavelength requiring tighter specifications on lens roughness, as well as a move to reflective optics producing double pass impact of surface roughness.

While the EPE from variation in aberrations across the exposure field is correctable in OPC software, there are no known ways to address tool-to-tool aberration variation. Given that foundries are expected to have multiple EUV tools for high volume manufacturing, the degree of tool-matching between different machines is expected to play a critical role to the success of EUV. This work seeks to further the study by quantifying the simulated edge placement error on realistic 7 nm / 5 nm node designs resulting from a fleet consisting of multiple EUV tools, under the assumption of single OPC model / mask for multiple tools and whether such assumptions are valid. Given the importance of tool-to-tool aberration matching in EUVL, this study investigates the amount of variation in tool-to-tool aberration that can be tolerated before foundries must consider tool dedicated OPC mask sets. This study statistically analyzes different metrics such as EPEs, image shifts and worst case excursions to understand which single tool in the fleet should be best used in model calibration to generate the OPC mask shapes. In addition, an effort to rank relative quality of the verification solutions is investigated, to be used to tool allocation.

Proceedings Article | 16 October 2017 Paper

Optical proximity correction for anamorphic extreme ultraviolet lithography

Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam

Proceedings Volume 10450, 104500V (2017) https://doi.org/10.1117/12.2280548

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Finite-difference time-domain method, Wafer-level optics, Systems modeling, Extreme ultraviolet lithography, Projection systems, Scanners, Electromagnetism

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SPIE Journal Paper | 19 August 2017

Optical proximity correction for anamorphic extreme ultraviolet lithography

Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam

JM3, Vol. 16, Issue 04, 041004, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041004

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Wafer-level optics, Finite-difference time-domain method, Extreme ultraviolet, Systems modeling, Scanners, Extreme ultraviolet lithography, Projection systems

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SPIE Journal Paper | 25 July 2017

Enabling full-field physics-based optical proximity correction via dynamic model generation

Michael Lam, Chris Clifford, Ananthan Raghunathan, Germain Fenger, Kostas Adam

JM3, Vol. 16, Issue 03, 033502, (July 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033502

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Proceedings Article | 24 March 2017 Presentation + Paper

Enabling full field physics based OPC via dynamic model generation

Michael Lam, Chris Clifford, Ananthan Raghunathan, Germain Fenger, Kostas Adam

Proceedings Volume 10143, 1014316 (2017) https://doi.org/10.1117/12.2261222

KEYWORDS: Optical proximity correction, Physics, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Optical simulations, Apodization, Optical aberrations, Wavefront aberrations, Photovoltaics, Computer simulations, Reticles, Scanners, Lithography

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SPIE Journal Paper | 16 February 2016

Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, Kostas Adam

JM3, Vol. 15, Issue 02, 021204, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021204

KEYWORDS: 3D modeling, Photomasks, Near field, Electromagnetism, Lithography, Semiconducting wafers, Scattering, Lithographic illumination, Diffraction, Critical dimension metrology

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Proceedings Article | 18 March 2015 Paper

Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Michael Oliver, David Fryer, Edita Tejnil, Kostas Adam

Proceedings Volume 9426, 94260P (2015) https://doi.org/10.1117/12.2085671

KEYWORDS: 3D modeling, Photomasks, Near field, Critical dimension metrology, Semiconducting wafers, Lithography, Image quality, Data transmission, Electromagnetism, Diffraction

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Proceedings Article | 17 October 2014 Paper

14-nm photomask simulation sensitivity

John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 9231, 92310I (2014) https://doi.org/10.1117/12.2066483

KEYWORDS: Photomasks, 3D modeling, Semiconducting wafers, Optical proximity correction, Data modeling, Calibration, Manufacturing, Photoresist materials, Metrology, Refractive index

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Proceedings Article | 31 March 2014 Paper

Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk

David Fryer, Michael Lam, Kostas Adam, Chris Clifford, Mike Oliver, Christian Zuniga, John Sturtevant, ChangAn Wang, Scott Mansfield

Proceedings Volume 9052, 905216 (2014) https://doi.org/10.1117/12.2046489

KEYWORDS: Photomasks, 3D modeling, Calibration, Source mask optimization, Data modeling, Semiconducting wafers, Performance modeling, Tolerancing, Metrology, Manufacturing

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Proceedings Article | 12 April 2013 Paper

Accurate 3DEMF mask model for full-chip simulation

Michael Lam, Kostas Adam, David Fryer, Christian Zuniga, Haiqing Wei, Michael Oliver, Chris Clifford

Proceedings Volume 8683, 86831D (2013) https://doi.org/10.1117/12.2013167

KEYWORDS: Photomasks, Polarization, Scattering, Near field, Light scattering, Optical proximity correction, Semiconducting wafers, Systems modeling, Error analysis, Solids

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Proceedings Article | 23 March 2012 Paper

3D mask modeling for EUV lithography

Julien Mailfert, Christian Zuniga, Vicky Philipsen, Konstantinos Adam, Michael Lam, James Word, Eric Hendrickx, Geert Vandenberghe, Bruce Smith

Proceedings Volume 8322, 832224 (2012) https://doi.org/10.1117/12.918267

KEYWORDS: Photomasks, Extreme ultraviolet, 3D modeling, Reflectivity, Extreme ultraviolet lithography, Calibration, Semiconducting wafers, Scanners, Mirrors, Visualization

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Proceedings Article | 14 October 2011 Paper

OPC modeling and correction solutions for EUV lithography

James Word, Christian Zuniga, Michael Lam, Mohamed Habib, Kostas Adam, Michael Oliver

Proceedings Volume 8166, 81660Q (2011) https://doi.org/10.1117/12.899591

KEYWORDS: Optical proximity correction, Photomasks, Reticles, Extreme ultraviolet lithography, Model-based design, Reflectivity, 3D modeling, Extreme ultraviolet, Optical lithography, Semiconducting wafers

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Proceedings Article | 5 April 2011 Paper

EUV flare and proximity modeling and model-based correction

Christian Zuniga, Mohamed Habib, James Word, Gian Lorusso, Eric Hendrickx, Burak Baylav, Raghu Chalasani, Michael Lam

Proceedings Volume 7969, 79690T (2011) https://doi.org/10.1117/12.879488

KEYWORDS: Extreme ultraviolet, Optical proximity correction, Data modeling, Model-based design, Photomasks, Point spread functions, Calibration, Extreme ultraviolet lithography, Fractal analysis, 3D modeling

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Proceedings Article | 16 March 2010 Paper

Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations

David Melville, Alan Rosenbluth, Kehan Tian, Kafai Lai, Saeed Bagheri, Jaione Tirapu-Azpiroz, Jason Meiring, Scott Halle, Greg McIntyre, Tom Faure, Daniel Corliss, Azalia Krasnoperova, Lei Zhuang, Phil Strenski, Andreas Waechter, Laszlo Ladanyi, Francisco Barahona, Daniele Scarpazza, Jon Lee, Tadanobu Inoue, Masaharu Sakamoto, Hidemasa Muta, Alfred Wagner, Geoffrey Burr, Young Kim, Emily Gallagher, Mike Hibbs, Alexander Tritchkov, Yuri Granik, Moutaz Fakhry, Kostas Adam, Gabriel Berger, Michael Lam, Aasutosh Dave, Nick Cobb

Proceedings Volume 7640, 764006 (2010) https://doi.org/10.1117/12.846716

KEYWORDS: Source mask optimization, Photomasks, Metals, Lithography, Optical proximity correction, Line edge roughness, Resolution enhancement technologies, Diffractive optical elements, Semiconducting wafers, Scanning electron microscopy

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SPIE Journal Paper | 1 October 2009

Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point-spread function, and flare map calibration

Gian Lorusso, Frieda Van Roey, Eric Hendrickx, Germain Fenger, Michael Lam, Christian Zuniga, Mohamed Habib, Hesham Diab, James Word

JM3, Vol. 8, Issue 04, 041505, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238515

KEYWORDS: Metrology, Fractal analysis, Point spread functions, Extreme ultraviolet lithography, Extreme ultraviolet, Deep ultraviolet, Calibration, Scanning electron microscopy, Visualization, Convolution

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Proceedings Article | 16 March 2009 Paper

Modeling laser bandwidth for OPC applications

Christian Zuniga, Kostas Adam, Michael Lam, Ivan Lalovic, Peter De Bisschop

Proceedings Volume 7274, 72741O (2009) https://doi.org/10.1117/12.813869

KEYWORDS: Data modeling, Calibration, Optical proximity correction, Chromatic aberrations, Cadmium, Critical dimension metrology, Laser applications, Systems modeling, Image processing, Laser scanners

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Proceedings Article | 20 March 2008 Paper

Hybrid Hopkins-Abbe method for modeling oblique angle mask effects in OPC

Konstantinos Adam, Michael Lam

Proceedings Volume 6924, 69241E (2008) https://doi.org/10.1117/12.776731

KEYWORDS: System on a chip, Panoramic photography, Diffraction, Optical proximity correction, 3D modeling, Scattering, Computer simulations, Photomasks, Electromagnetic scattering, Cadmium sulfide

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Proceedings Article | 27 March 2007 Paper

Understanding the impact of rigorous mask effects in the presence of empirical process models used in optical proximity correction (OPC)

Michael Lam, Konstantinos Adam

Proceedings Volume 6520, 65203M (2007) https://doi.org/10.1117/12.712362

KEYWORDS: Photomasks, Process modeling, Data modeling, Optical proximity correction, Cadmium sulfide, Calibration, Wafer-level optics, Critical dimension metrology, Semiconducting wafers, Optical calibration

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Some practical aspects of integrating a mask modeling solution into the Optical Proximity Correction (OPC) framework are discussed. Specifically, investigations were performed to understand to what degree empirical process models used in OPC can compensate for mask effects when a Kirchhoff mask model is used. It is shown that both Constant Threshold Resist (CTR) models as well as more complex variable threshold process models can both compensate for mask effects at a single plane of focus. However, when looking through process window, neither process model can predict the focal behavior of Electro-Magnetic Field (EMF) simulators. The impact of mask effects will therefore need to be modeled in OPC, since process models cannot fully compensate for their effects. Heuristic approaches to modeling mask effects, like a constant biasing of feature edges, are then investigated and compared to more complex mask modeling solutions like Domain Decomposition Methods (DDM). It is shown that these heuristic approaches can be effective at single planes of focus to partially mitigate mask effects, however, do not provide complete solutions to predict and compensate for mask effects. DDM stands in stark contrast to heuristic methods, correctly predicting the through focus behavior of EMF simulations for the tested pitches and CDs. The impact of optical diameter (periodic boundary conditions) is also investigated to understand how the introduction of mask periodicity effects from optical diameter degrades the benefits derived from mask modeling. It is shown that as much as a 33% reduction in CD predictability is observed from an optical model with a 1um optical diameter compared to a 2.56um optical diameter. Finally, both a Kirchhoff mask model and a DDM mask model are compared to see which mask model more accurately explains experimental CD measurement data from a 65nm process. The DDM model generally reduces the edge placement error (EPE) on the calibrated focal data by 0.3-1.0nm.

Proceedings Article | 20 October 2006 Paper

Simplified model for absorber feature transmissions on EUV masks

Michael Lam, Andrew Neureuther

Proceedings Volume 6349, 63492H (2006) https://doi.org/10.1117/12.686209

KEYWORDS: Photomasks, Finite-difference time-domain method, Scattering, Extreme ultraviolet, Near field, Wave propagation, Polarization, Interfaces, Semiconducting wafers, Diffraction

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Proceedings Article | 22 March 2006 Paper

Modeling methodologies and defect printability maps for buried defects in EUV mask blanks

Michael Lam, Andrew Neureuther

Proceedings Volume 6151, 61510D (2006) https://doi.org/10.1117/12.656744

KEYWORDS: Finite-difference time-domain method, Ray tracing, Deposition processes, Extreme ultraviolet, Reflectivity, Computer simulations, 3D imaging standards, Photomasks, Wave propagation, Scattering

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Proceedings Article | 6 May 2005 Paper

A 3D substrate and buried defect simulator for EUV mask blanks

Michael Lam, Andrew Neureuther

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599042

KEYWORDS: Ray tracing, Finite-difference time-domain method, Extreme ultraviolet, Tolerancing, 3D image processing, Photomasks, Multilayers, Extreme ultraviolet lithography, Reflection, Fourier transforms

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Proceedings Article | 6 December 2004 Paper

Fast simulation methods for defective EUV mask blank inspection

Michael Lam, Andrew Neureuther

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569075

KEYWORDS: Finite-difference time-domain method, Ray tracing, Reflection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Multilayers, Wave propagation, Geometrical optics, Near field

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Proceedings Article | 3 May 2004 Paper

Feature level test patterns for characterizing residual process effects

Andrew Neureuther, Gregory McIntyre, Frank Gennari, Michael Lam, Jason Cain, Garth Robins, Edward Huang, Jihong Choi, Ling Wang, Lei Yuan, Hideaki Oshima

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.540685

KEYWORDS: Plasma etching, Chemical mechanical planarization, Photomasks, Computer aided design, Optical proximity correction, Electronics, Etching, Metrology, Design for manufacturability, Prototyping

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Proceedings Article | 26 June 2003 Paper

Domain decomposition methods for simulation of printing and inspection of phase defects

Michael Lam, Konstantinos Adam, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485485

KEYWORDS: Inspection, Polarization, Projection systems, Photomasks, Etching, Diffraction, Printing, Computer simulations, Spatial frequencies, Cadmium sulfide

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Proceedings Article | 27 December 2002 Paper

Polarization contact: mask engineering

Michael Lam, Andrew Neureuther

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467897

KEYWORDS: Polarization, Photomasks, Tolerancing, Refractive index, Interfaces, Molybdenum, Printing, Thin films, Mask making, Semiconducting wafers

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Proceedings Article | 30 July 2002 Paper

Polarization masks: concept and initial assessment

Michael Lam, Andrew Neureuther

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474593

KEYWORDS: Polarization, Photomasks, Dielectric polarization, Refractive index, Near field, Phase shifts, Optical lithography, Lithography, Electromagnetism, Bridges

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Proceedings Article | 26 March 1993 Paper

Tactile feedback for teleoperation

Michael Cohn, Michael Lam, Ronald Fearing

Proceedings Volume 1833, (1993) https://doi.org/10.1117/12.142113

KEYWORDS: Sensors, Human subjects, Surgery, Spatial frequencies, Actuators, Chemical elements, Signal processing, Skin, Protactinium, Micromachining

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Showing 5 of 28 publications

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