PROCEEDINGS VOLUME 2091
MICROELECTRONIC PROCESSING '93 | 26-30 SEPTEMBER 1993
Microelectronic Processes, Sensors, and Controls
MICROELECTRONIC PROCESSING '93
26-30 September 1993
Monterey, CA, United States
RTP
Proc. SPIE 2091, Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview, 0000 (15 February 1994); doi: 10.1117/12.167329
Proc. SPIE 2091, Benchmarking of temperature measurement and control capability of commercially available rapid thermal processor (RTP) systems, 0000 (15 February 1994); doi: 10.1117/12.167336
Proc. SPIE 2091, Application of RTA to a 0.8-um BiCMOS process, 0000 (15 February 1994); doi: 10.1117/12.167345
Proc. SPIE 2091, Comparison of rapid thermal processing and furnace processing for quarter-micrometer CMOS, 0000 (15 February 1994); doi: 10.1117/12.167352
Proc. SPIE 2091, Characterization of rapid thermally grown dielectrics by surface charge analysis and atomic force microscopy, 0000 (15 February 1994); doi: 10.1117/12.167363
Proc. SPIE 2091, Fabrication of sub-40-nm p-n junctions for 0.18-um MOS device applications using a cluster-tool-compatible, nanosecond thermal doping technique, 0000 (15 February 1994); doi: 10.1117/12.167367
Cluster Processing
Proc. SPIE 2091, Manufacturing parameters of large-batch, small-batch, and single-wafer cluster tools for poly-gate applications, 0000 (15 February 1994); doi: 10.1117/12.167368
Proc. SPIE 2091, Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module, 0000 (15 February 1994); doi: 10.1117/12.167369
Proc. SPIE 2091, Application of a cluster tool for control of bipolar polysilicon emitter transistor characteristics, 0000 (15 February 1994); doi: 10.1117/12.167330
Proc. SPIE 2091, Dry patterning of resistive masks and topological structures, 0000 (15 February 1994); doi: 10.1117/12.167331
Proc. SPIE 2091, Influence of adjustment accuracy on the image quality for laser cluster systems of microlithography, 0000 (15 February 1994); doi: 10.1117/12.167332
Proc. SPIE 2091, Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer, 0000 (15 February 1994); doi: 10.1117/12.167333
Plasma Generation, Process Development, and Damage Testing I
Proc. SPIE 2091, Variable energy neutral beam design and kinetic energy etching, 0000 (15 February 1994); doi: 10.1117/12.167334
Proc. SPIE 2091, Native oxide removal on Si surface by NF3-added hydrogen plasma downstream treatment, 0000 (15 February 1994); doi: 10.1117/12.167335
Proc. SPIE 2091, Sub-0.5-um polysilicon etching on a MERIE system: a case study in manufacturing, 0000 (15 February 1994); doi: 10.1117/12.167337
Proc. SPIE 2091, Magnetically enhanced reactive ion etching of silylated resist in O2/Ar mixtures, 0000 (15 February 1994); doi: 10.1117/12.167338
Proc. SPIE 2091, Manufacturing integration of real-time laser interferometry to isotropically etch silicon oxide films for contacts and vias, 0000 (15 February 1994); doi: 10.1117/12.167339
Proc. SPIE 2091, High-selectivity magnetically enhanced reactive ion etching of boron nitride films, 0000 (15 February 1994); doi: 10.1117/12.167340
Proc. SPIE 2091, Optical emission spectroscopy on the GEC reference cell, 0000 (15 February 1994); doi: 10.1117/12.167341
Plasma Generation, Process Development, and Damage Testing II
Proc. SPIE 2091, Al-Cu alloy etching using in-reactor aluminum chloride formation in static magnetron triode reactive ion etching, 0000 (15 February 1994); doi: 10.1117/12.167342
Proc. SPIE 2091, Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field, 0000 (15 February 1994); doi: 10.1117/12.167343
Proc. SPIE 2091, Charge-buildup damage to gate oxide, 0000 (15 February 1994); doi: 10.1117/12.167344
Proc. SPIE 2091, Process modification to reduce damage to reactive ion etched surfaces, 0000 (15 February 1994); doi: 10.1117/12.167346
Proc. SPIE 2091, High-density plasma etching: a gate oxide damage study, 0000 (15 February 1994); doi: 10.1117/12.167347
Proc. SPIE 2091, Modeling the properties of PECVD silicon dioxide films using neural networks, 0000 (15 February 1994); doi: 10.1117/12.167348
Proc. SPIE 2091, Characterization of organometallic polymers generated post-RIE/ECR etching followed by in-situ microwave ashing, 0000 (15 February 1994); doi: 10.1117/12.167349
Sensors and Applications
Proc. SPIE 2091, Electrical sensors for monitoring rf plasma sheaths, 0000 (15 February 1994); doi: 10.1117/12.167350
Proc. SPIE 2091, Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control, 0000 (15 February 1994); doi: 10.1117/12.167351
Proc. SPIE 2091, Emissivity compensated radiance-contrast-tracking pyrometry for semiconductor processing, 0000 (15 February 1994); doi: 10.1117/12.167353
Proc. SPIE 2091, Monitoring of submicrometer linewidths using diffraction gratings, 0000 (15 February 1994); doi: 10.1117/12.167354
Tool and Process Control
Proc. SPIE 2091, Use of an electrochemical sensor for controlling the etching of silicon dioxide films in aqueous HF processing baths, 0000 (15 February 1994); doi: 10.1117/12.167355
Proc. SPIE 2091, Real-time image analysis and control of the solid/liquid interface during zone-melting recrystallization of thin films, 0000 (15 February 1994); doi: 10.1117/12.167356
Proc. SPIE 2091, Practical use of an in-line vacuum metrology cluster in a minifactory environment, 0000 (15 February 1994); doi: 10.1117/12.167357
Proc. SPIE 2091, Run-to-run control framework for VLSI manufacturing, 0000 (15 February 1994); doi: 10.1117/12.167358
Proc. SPIE 2091, First-wafer effect on ellipsometer metrics and spatial etch pattern of polysilicon gate etch, 0000 (15 February 1994); doi: 10.1117/12.167359
Proc. SPIE 2091, Software integration of in-situ spectroscopic ellipsometry, 0000 (15 February 1994); doi: 10.1117/12.167360
Proc. SPIE 2091, On-line optimization of stop-etch time, 0000 (15 February 1994); doi: 10.1117/12.167361
Proc. SPIE 2091, Generic operational models and factory control, 0000 (15 February 1994); doi: 10.1117/12.167362
Proc. SPIE 2091, Real-time feedback control of reactive ion etching, 0000 (15 February 1994); doi: 10.1117/12.167364
Proc. SPIE 2091, Empirical models in semiconductor processing: optimization and assessment as simulators, 0000 (15 February 1994); doi: 10.1117/12.167365
Sensors and Applications
Proc. SPIE 2091, Integrated system of optical sensors for plasma monitoring and plasma process control, 0000 (15 February 1994); doi: 10.1117/12.167366
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