High throughput scanning probe metrology for high-NA EUV photoresist profiling

Artem Khatchaturiants; Marta Mucientes; Arseniy Kalinin; Yan Guo; Seokhan Kim; Alain Moussa; Janusz Bogdanowicz; Joren Severi; Gian Lorusso; Danilo De Simone; Anne-Laure Charley; Philippe Leray; Maarten E. van Reijzen; Cornel Bozdog; Hamed M. Sadeghian

doi:10.1117/12.2616089

13 June 2022 High throughput scanning probe metrology for high-NA EUV photoresist profiling

Artem Khatchaturiants, Marta Mucientes, Arseniy Kalinin, Yan Guo, Seokhan Kim, Alain Moussa, Janusz Bogdanowicz, Joren Severi, Gian Lorusso, Danilo De Simone, Anne-Laure Charley, Philippe Leray, Maarten E. van Reijzen, Cornel Bozdog, Hamed M. Sadeghian

Author Affiliations +

Proceedings Volume PC12053, Metrology, Inspection, and Process Control XXXVI; PC120530I (2022) https://doi.org/10.1117/12.2616089
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Improved resolution of the High-NA EUV technology comes with thinner photoresist and smaller aspect-ratio requirements. Trade-offs include more stringent process control needs for resist loss and line roughness. Traditional metrologies like OCD or CD-SEM lose sensitivity due to diminishing interaction volume. A metrology technique that thrives in this regime is Scanning Probe Microscopy: thinner resist allows for higher scanning speed, and smaller aspect ratio for higher measurement accuracy. Here we propose a High-Throughput SPM technique as key enabler for High-NA EUV process control. Detailed, high-density full wafer measurements of resist loss, CD and roughness are enabled by a high-throughput, 4-head SPM toolset, and compared for different resist thicknesses down to 10nm. Sampling schemes consistent with scanner throughput are considered.

Conference Presentation

Citation Download Citation

Artem Khatchaturiants, Marta Mucientes, Arseniy Kalinin, Yan Guo, Seokhan Kim, Alain Moussa, Janusz Bogdanowicz, Joren Severi, Gian Lorusso, Danilo De Simone, Anne-Laure Charley, Philippe Leray, Maarten E. van Reijzen, Cornel Bozdog, and Hamed M. Sadeghian "High throughput scanning probe metrology for high-NA EUV photoresist profiling", Proc. SPIE PC12053, Metrology, Inspection, and Process Control XXXVI, PC120530I (13 June 2022); https://doi.org/10.1117/12.2616089

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