Dr. Kai Peter Profile

Dr. Kai Peter

at Infineon Technologies AG

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Author

Publications (14)

Proceedings Article | 5 April 2011 Paper

Rerouting and guided-repair strategies to resolve lithography hotspots

Kay Engelhardt, Reinhard März, Kai Peter

Proceedings Volume 7974, 79740R (2011) https://doi.org/10.1117/12.879237

KEYWORDS: Lithography, Metals, Design for manufacturing, Analog electronics, Polishing, Multilayers, Pollution control, Manufacturing, Americium, Design for manufacturability

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Proceedings Article | 4 March 2008 Paper

A routing clean-up methodology for improvement of defect and lithography related yield

Jacques Herry, Olivier Rizzo, Hanno Melzner, Reinhard März, Kai Peter

Proceedings Volume 6925, 69250J (2008) https://doi.org/10.1117/12.770292

KEYWORDS: Metals, Lithography, Connectors, Virtual colonoscopy, Design for manufacturing, Yield improvement, Optics manufacturing, Manufacturing, Antennas, Particles

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Proceedings Article | 4 March 2008 Paper

ACLV- and process-window-aware extraction of transistor parameters using litho-friendly design (LfD) methodologies

Kai Peter, Anton Huber, Reinhard März, Monika Gschöderer, Sascha Siegler, Rosi Deppe, Eduard Ratai, Alexander Nielsen

Proceedings Volume 6925, 692510 (2008) https://doi.org/10.1117/12.771885

KEYWORDS: Transistors, Field effect transistors, Calibration, Lithography, Chemical mechanical planarization, Resolution enhancement technologies, Doping, Analog electronics, Cadmium, Silicon

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Proceedings Article | 27 March 2007 Paper

Investigation of DFM-lite ORC approach during OPC simulation

Martin Niehoff, Sebastian Schmidt, Chin Teong Lim, Dieter Kaiser, Kai Peter, Dave Wallis, Vlad Temchenko, Ingo Meusel

Proceedings Volume 6520, 65204E (2007) https://doi.org/10.1117/12.711395

KEYWORDS: Optical proximity correction, Polishing, Design for manufacturing, Image processing, Lithography, Computer simulations, Optics manufacturing, Photomasks, Design for manufacturability, Image quality

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Proceedings Article | 21 March 2007 Paper

Hardware verification of litho-friendly design (LfD) methodologies

Shyue Fong Quek, Klaus Keiner, Byoung Il Choi, Kai Peter, Mei Chun Yeo, Sonja Gröndahl, Soo Muay Goh, Reinhard März, Nan Shu Chen

Proceedings Volume 6521, 65210M (2007) https://doi.org/10.1117/12.713995

KEYWORDS: Calibration, Process modeling, Lithography, Resolution enhancement technologies, Design for manufacturing, Semiconducting wafers, Prototyping, 3D modeling, Scanning electron microscopy, Printing

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Proceedings Article | 20 October 2006 Paper

Litho-friendly design (LfD) methodologies applied to library cells

Kai Peter, Reinhard März, Wilhelm Maurer, Sonja Gröndahl

Proceedings Volume 6349, 63490E (2006) https://doi.org/10.1117/12.687546

KEYWORDS: Photovoltaics, Process modeling, Lithography, Optical proximity correction, Design for manufacturing, Databases, Resolution enhancement technologies, Silicon, Solar cells, Model-based design

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Proceedings Article | 21 June 2006 Paper

ORC and LfD as first steps towards DfM

Kai Peter, Reinhard März, Wilhelm Maurer

Proceedings Volume 6281, 62810I (2006) https://doi.org/10.1117/12.692641

KEYWORDS: Lithography, Photomasks, Process modeling, SRAF, Optical proximity correction, Design for manufacturing, Polishing, Design for manufacturability, Cadmium sulfide, Mask making

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Proceedings Article | 10 July 2003 Paper

Generalization of the photo process window and its application to OPC test pattern design

Hans Eisenmann, Andrzej Strojwas, Kai Peter

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.497476

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Silicon, Image processing, Etching, Critical dimension metrology, Artificial intelligence, Data processing, Photoresist processing

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From the early development phase up to the production phase, test pattern play a key role for microlithography. The requirement for test pattern is to represent the design well and to cover the space of all process conditions, e.g. to investigate the full process window and all other process parameters. This paper shows that the current state-of-the-art test pattern do not address these requirements sufficiently and makes suggestions for a better selection of test pattern. We present a new methodology to analyze an existing layout (e.g. logic library, test pattern or full chip) for critical layout situations which does not need precise process data. We call this method "process space decomposition", because it is aimed at decomposing the process impact to a layout feature into a sum of single independent contributions, the dimensions of the process space. This is a generalization of the classical process window, which examines defocus and exposure dependency of given test pattern, e.g. CD value of dense and isolated lines. In our process space we additionally define the dimensions resist effects, etch effects, mask error and misalignment, which describe the deviation of the printed silicon pattern from its target. We further extend it by the pattern space using a product based layout (library, full chip or synthetic test pattern). The criticality of pattern is defined by their deviation due to aerial image, their sensitivity to the respective dimension or several combinations of these. By exploring the process space for a given design, the method allows to find the most critical patterns independent of specific process parameters. The paper provides examples for different applications of the method: (1) selection of design oriented test pattern for lithography development (2) test pattern reduction in process characterization (3) verification/optimization of printability and performance of post processing procedures (like OPC) (4) creation of a sensitive process monitor.

Proceedings Article | 28 May 2003 Paper

Through-pellicle-capable DUV-based CD metrology on reticles for wafer fab and R&D environment

Andrew Hourd, Gerd Scheuring, Karl Sommer, Parkson Chen, Thomas Schaetz, Vicky Philipsen, Shiuh-Bin Chen, Rik Jonckheere, Volodymyr Ordynskyy, Frank Hillmann, Hans-Jurgen Brueck, Kai Peter

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515116

KEYWORDS: Scanning electron microscopy, Photomasks, Pellicles, Reticles, Calibration, Semiconducting wafers, Critical dimension metrology, Binary data, 193nm lithography, Metrology

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Proceedings Article | 28 May 2003 Paper

Implementation of 248-nm-based CD metrology for advanced reticle production

Parkson Chen, Shiuh-Bin Chen, Hans Hartmann, Hans-Jurgen Bruck, Kai Peter, Volodymyr Ordynskyy, Thomas Schatz, Gerd Scheuring, Karl Sommer, Andrew Hourd, Rik Jonckheere, Stefan Dobereiner, Anthony Grimshaw, Frank Hillmann, Vicky Philipsen, Christian Gittinger

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515114

KEYWORDS: Lamps, Reticles, Critical dimension metrology, Metrology, Contamination, Deep ultraviolet, Photomasks, Reliability, Time metrology, Manufacturing

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Proceedings Article | 27 December 2002 Paper

Reliable subnanometer repeatability for CD metrology in a reticle production environment

Frank Hillmann, Shiuh-Bin Chen, Hans-Juergen Brueck, Parkson Chen, Christian Gittinger, Andrew Hourd, Volodymyr Ordynskyy, Gerd Scheuring, Vicky Philipsen, Thomas Schaetz, Anthony Grimshaw, Hans Hartmann, Rik Jonckheere, Karl Sommer, Stefan Doebereiner, Kai Peter

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468090

KEYWORDS: Reticles, Metrology, Deep ultraviolet, Photomasks, Critical dimension metrology, Line edge roughness, Binary data, Manufacturing, Computed tomography, Image processing

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Proceedings Article | 9 April 2001 Paper

Quality assessment of advanced photomasks using the Q-CAP cluster tool

Martin Verbeek, Thomas Engel, Hans-Juergen Brueck, Karl Sommer, Kai Peter, Roman Liebe, Hans Hartmann, Thomas Schaetz, Gerd Scheuring, Volodymyr Ordynskyy, Gerald Galan, Corinne Miramond, Yair Eran, Emanuele Baracchi

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425084

KEYWORDS: Photomasks, Semiconducting wafers, Databases, Inspection, Optical proximity correction, Defect inspection, Data conversion, Wafer inspection, Computed tomography, Lithographic illumination

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Proceedings Article | 19 July 2000 Paper

Cluster tool solution for fabrication and qualification of advanced photomasks

Thomas Schaetz, Karl Sommer, Kai Peter, Thomas Engel, Hans Hartmann, Yair Eran, Olivier Maurin, Hans-Juergen Brueck, Gerd Scheuring, Frederic Lalanne, Corinne Miramond, Emanuele Baracchi

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392088

KEYWORDS: Photomasks, Databases, Critical dimension metrology, Defect inspection, Semiconducting wafers, Manufacturing, Optical proximity correction, Image processing, Inspection, Data storage

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Proceedings Article | 3 February 2000 Paper

Cluster tool for photomask inspection and qualification at 150-nm design rules and beyond

Kai Peter, Volodymyr Ordynskyy, Hans-Juergen Brueck, Christoph Dolainsky, Hans Hartmann

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377100

KEYWORDS: Photomasks, Inspection, Optical proximity correction, Databases, Semiconducting wafers, Data storage, Image processing, Device simulation, Optical lithography, Phase shifts

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Showing 5 of 14 publications

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