PROCEEDINGS VOLUME 5126
2003 CHAPTER BOOKS | 1 JANUARY - 31 DECEMBER 2003
17th International Conference on Photoelectronics and Night Vision Devices
2003 CHAPTER BOOKS
1 January - 31 December 2003
Bellingham, WA, United States
General Aspects of Photo- and Optoelectronics
Proc. SPIE 5126, Photoelectronics for a new generation of electron-optical equipment, 0000 (30 September 2003); doi: 10.1117/12.517174
Proc. SPIE 5126, Femto-attosecond photoelectronic imaging (the present state of the art and new trends), 0000 (30 September 2003); doi: 10.1117/12.517182
Proc. SPIE 5126, Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: I. Review of optoelectronic technologies, 0000 (30 September 2003); doi: 10.1117/12.517183
Proc. SPIE 5126, Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigation, 0000 (30 September 2003); doi: 10.1117/12.517184
Proc. SPIE 5126, The solid state silicon photomultiplier for a wide range of applications, 0000 (30 September 2003); doi: 10.1117/12.517185
Proc. SPIE 5126, HgCdTe photodiodes current-voltage characteristics simulation, 0000 (30 September 2003); doi: 10.1117/12.517187
Focal Plane Arrays
Proc. SPIE 5126, Infrared focal plane arrays: state of the art and development trends, 0000 (30 September 2003); doi: 10.1117/12.517239
Proc. SPIE 5126, The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD, 0000 (30 September 2003); doi: 10.1117/12.517241
Proc. SPIE 5126, The 128x128 and 288x384 InSb array photodetective assemblies for 3- to 5-um spectral range, 0000 (30 September 2003); doi: 10.1117/12.517242
Proc. SPIE 5126, The 4x288 linear FPA on the heteroepitaxial Hg<sub>1-x</sub>Cd<sub>x</sub>Te base, 0000 (30 September 2003); doi: 10.1117/12.517243
Proc. SPIE 5126, LWIR 2x256 focal plane array for time delay and integration, 0000 (30 September 2003); doi: 10.1117/12.517246
Proc. SPIE 5126, The recent and prospective developments of cooled IR FPAs for double application at Electron NRI, 0000 (30 September 2003); doi: 10.1117/12.523893
Proc. SPIE 5126, The 1x384 hybrid linear infrared focal plane arrays on InAs MOS structure for spectrometric applications, 0000 (30 September 2003); doi: 10.1117/12.517247
Quantum Well and Quantum Dot
Proc. SPIE 5126, Quantum well and quantum dot infrared photodetectors: physics of operation and modeling, 0000 (30 September 2003); doi: 10.1117/12.517295
Proc. SPIE 5126, Quantum well infrared photoconductors in infrared detectors technology, 0000 (30 September 2003); doi: 10.1117/12.517304
Proc. SPIE 5126, Photoelectrical characteristics of structures with nonrectangular quantum wells, 0000 (30 September 2003); doi: 10.1117/12.517305
Proc. SPIE 5126, Responsivity of multiple quantum well structures grown by MOCVD at normal incidence, 0000 (30 September 2003); doi: 10.1117/12.517307
Proc. SPIE 5126, Photoconductivity gain by Si<Ge> p-n junction containing quantum dots, 0000 (30 September 2003); doi: 10.1117/12.517308
Proc. SPIE 5126, 3- to 5-um InGaAs/AlGaAs QWIP heterostructure growth by metal organic chemical vapor deposition, 0000 (30 September 2003); doi: 10.1117/12.517314
Proc. SPIE 5126, Special features of noise measurement of photosensitive quantum well structures, 0000 (30 September 2003); doi: 10.1117/12.517316
Photodectors
Proc. SPIE 5126, Infrared photodetector on the basis of low-dimensional structure, 0000 (30 September 2003); doi: 10.1117/12.517317
Proc. SPIE 5126, Properties of Schottky-barrier <i>p</i>-Cd<sub>x</sub>Hg<sub>1-x</sub>Te structures with metal-tunnel transparent dielectric, 0000 (30 September 2003); doi: 10.1117/12.517318
Proc. SPIE 5126, The properties of Schottky-barrier photodiodes based on Cd<sub>x</sub>Hg<sub>1-x</sub>Te with tunnel transparent dielectric, 0000 (30 September 2003); doi: 10.1117/12.517319
Proc. SPIE 5126, High-speed photodetectors and photodetective assemblies for receiving laser radiation in 0.3- to 11-um spectral range, 0000 (30 September 2003); doi: 10.1117/12.517321
Proc. SPIE 5126, Isolating surface and bulk contributions in an HgCdTe junction diode, 0000 (30 September 2003); doi: 10.1117/12.517323
Proc. SPIE 5126, Simple computer model of an IR-photoconductor, 0000 (30 September 2003); doi: 10.1117/12.517325
Proc. SPIE 5126, Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics, 0000 (30 September 2003); doi: 10.1117/12.517331
Proc. SPIE 5126, Performance of thermoelectrically cooled MCT photoconductors, 0000 (30 September 2003); doi: 10.1117/12.523892
Proc. SPIE 5126, Variations of MCT photoconductor performance with background flux density, 0000 (30 September 2003); doi: 10.1117/12.517334
Night Vision Systems
Proc. SPIE 5126, Image merging device, 0000 (30 September 2003); doi: 10.1117/12.517335
Proc. SPIE 5126, Simulators of dynamic thermal fields for thermal imaging systems bench test, 0000 (30 September 2003); doi: 10.1117/12.517345
Proc. SPIE 5126, Transient electronic processes in MIS-photo targets of vidicons sensitive to midband infrared radiation, 0000 (30 September 2003); doi: 10.1117/12.517346
Proc. SPIE 5126, Utmost sensitivity of methods of visualization of zones of the increased concentration impurity of gases and vapors in the air with the help of thermal imagers and image intensifiers, 0000 (30 September 2003); doi: 10.1117/12.517347
Proc. SPIE 5126, Analysis of utmost capabilities of detection of objects with the help of an observation thermal imager, 0000 (30 September 2003); doi: 10.1117/12.517348
Proc. SPIE 5126, Calculation of utmost parameters of active vision system based on nonscanning thermal imager, 0000 (30 September 2003); doi: 10.1117/12.517350
Proc. SPIE 5126, Calculation of thermal contrasts and potentials of the infrared images in spectral ranges 3-5 um and 8-14 um at the availability and in the absence of counterradiation of the environment, 0000 (30 September 2003); doi: 10.1117/12.517351
Proc. SPIE 5126, Laser-and-holographic measuring complex of FSPC GIPO, 0000 (30 September 2003); doi: 10.1117/12.517353
Proc. SPIE 5126, A 1- to 11-um optical code sensor with Gray code system, 0000 (30 September 2003); doi: 10.1117/12.517354
Photoelectric Phenomena in Photodetectors
Proc. SPIE 5126, Photocapacitance effect in narrow bandgap PbSnTe<In>, 0000 (30 September 2003); doi: 10.1117/12.517355
Proc. SPIE 5126, Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation, 0000 (30 September 2003); doi: 10.1117/12.517356
Proc. SPIE 5126, Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration, 0000 (30 September 2003); doi: 10.1117/12.517358
Proc. SPIE 5126, Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors), 0000 (30 September 2003); doi: 10.1117/12.517359
Proc. SPIE 5126, Photosensitivity of heterostructure S<sub>1-x</sub>Ge<sub>x</sub>/Si taking into account free-carrier absorption of radiation and length of hot carrier energy path, 0000 (30 September 2003); doi: 10.1117/12.517360
Proc. SPIE 5126, On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation, 0000 (30 September 2003); doi: 10.1117/12.517361
Proc. SPIE 5126, Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals, 0000 (30 September 2003); doi: 10.1117/12.517362
Proc. SPIE 5126, Negative infrared photoconductivity in CdS<sub>1-x</sub>Se<sub>x</sub> films, 0000 (30 September 2003); doi: 10.1117/12.517363
Problems in the Technology of Photoelectronic Materials and Structures
Proc. SPIE 5126, Peculiarities of diffusion p-n junction formation in Cd<sub>x</sub>Hd<sub>1-x</sub>Te graded-bandgap epitaxial structures, 0000 (30 September 2003); doi: 10.1117/12.517365
Proc. SPIE 5126, The state of the art and prospects of Cd<sub>x</sub>Hg<sub>1-x</sub>Te molecular beam epitaxy, 0000 (30 September 2003); doi: 10.1117/12.517366
Proc. SPIE 5126, Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers, 0000 (30 September 2003); doi: 10.1117/12.517367
Proc. SPIE 5126, A control device: a beam structure of charged particles, 0000 (30 September 2003); doi: 10.1117/12.517368
Proc. SPIE 5126, Features of growth and photoconductivity of epitaxial films of the Pb<sub>1-x</sub>Mn<sub>x</sub>Te(Ga) solid solutions, 0000 (30 September 2003); doi: 10.1117/12.517369
Proc. SPIE 5126, Deposition of carbonic films from plasma of arc discharge without a cathode spot, 0000 (30 September 2003); doi: 10.1117/12.517370
Proc. SPIE 5126, Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg<sub>1-x</sub>Cd<sub>x</sub>Te under ion-beam milling, 0000 (30 September 2003); doi: 10.1117/12.517392
Proc. SPIE 5126, Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasma, 0000 (30 September 2003); doi: 10.1117/12.517394
Proc. SPIE 5126, Isoperiodical Pb<sub>1-x</sub>Sn<sub>x</sub>Te(In)/PbTe<sub>1-y</sub>Se<sub>y</sub> heterojunctions obtained in ultrahigh vacuum, 0000 (30 September 2003); doi: 10.1117/12.517396
Proc. SPIE 5126, Functionalities of Cd<sub>1-x</sub>Zn<sub>x</sub>Se films deposited from a water solution in IR region of a spectrum, 0000 (30 September 2003); doi: 10.1117/12.517398
Proc. SPIE 5126, Electron diffraction study of photosensitive heterostructures PbSnTe-PbTe grown by MBE, 0000 (30 September 2003); doi: 10.1117/12.517400
Requirements for Photodetectors and their characteristics Measuring
Proc. SPIE 5126, Low-frequency noise spectra of high-quality MCT photoconductors, 0000 (30 September 2003); doi: 10.1117/12.517401