Dr. Gilles R. Amblard Profile

Dr. Gilles R. Amblard

Principal /Engineering Manager at Samsung Austin Semiconductors LLC

SPIE Involvement:

Conference Co-Chair | Editor | Author

Area of Expertise:

Photolithography , Advanced patterning , Materials , Semiconductor , Immersion , EUV

Profile Summary

Dr. Gilles Amblard has an extensive career in semiconductor lithography, from e-beam to g-line to i-line to KrF to ArF dry and immersion to EUV lithography. He has held positions of leadership in photolithography research, development, and operations in research organizations such as CNET and SEMATECH, as well as many of the leading companies in the semiconductor industry, including Intel, Samsung, AMD, IBM and STMicroelectronics. Over the course of his career, Dr. Amblard has pioneered lithography technologies, developing advanced processes and implementing them into high volume manufacturing for production of multiple technology nodes from half-micron down to sub-10nm. Prior to starting his career, he earned advanced degrees and a PhD in materials chemistry. During the course of his career, he researched and produced multiple US patents and was the author of several publications in SPIE proceedings and other technical journals and publications. Dr. Amblard has also been serving as Program Committee Member and Session Chairman for SPIE Advanced Lithography /Advances in Materials and Processes Conferences.

Publications (15)

Proceedings Article | 25 March 2016 Paper

Paper

An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography

Gilles Amblard, Sara Purdy, Ryan Cooper, Marjory Hockaday

Proceedings Volume 9779, 97790U (2016) https://doi.org/10.1117/12.2219375

KEYWORDS: Lithography, Photoresist materials, High volume manufacturing, Line edge roughness, Yield improvement, Immersion lithography, Photomasks, Manufacturing, Control systems, Metrology, Line width roughness, Optical lithography, Semiconducting wafers, Cadmium sulfide, Photoresist developing, Inspection

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Proceedings Article | 4 April 2011 Paper

Paper

Development and characterization of carbon nanotube processes for NRAM technology

Gilles Amblard

Proceedings Volume 7970, 797017 (2011) https://doi.org/10.1117/12.879142

KEYWORDS: Semiconducting wafers, Thin film coatings, Carbon nanotubes, Oxides, Silicon, Coating, Absorbance, Manufacturing, Silicon films, Silicon carbide

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Proceedings Article | 12 June 2003 Paper

Paper

Ultrathin photoresists for 193-nm lithography

Richard Peters, Gilles Amblard, Jen-Jiang Lee, Todd Guenther

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485132

KEYWORDS: Line edge roughness, Lithography, Photoresist processing, Photoresist materials, Scanning electron microscopy, Semiconducting wafers, Silicon, Fluorine, Ions, Mass spectrometry

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Fabrication of integrated circuits with sub-100 nm features will require tight control of critical dimensions, line edge roughness, and profiles of patterned features. The drive to smaller features will be accomplished principally by reduction of exposure wavelength in lithography systems. The use of 157 nm and EUV lithography will most likely require thin resists with thicknesses less than 150 nm due to the high absorption of materials at these wavelengths. High NA and low k1 systems for 193 nm lithography may also benefit from the use of thin photoresist processes. The properties and behavior of thin resists are expected to be strongly affected by interfaces, and thus, the lithographic performance of resists with sub-200-nm thickness is of interest. In this paper, we present a study of the lithographic behavior of a single layer 193 nm resist at different thicknesses ranging from 90 nm to 240 nm. The line edge roughness (LER) of 193 nm resist films increased dramatically with decreasing film thickness, but increasing the concentration of photoacid generator (PAG) and base quencher in the films helped reduce the LER. The process latitude for dense 110 nm lines (250 nm pitch) imaged using a single resist formulation with high PAG/quencher concentration was experimentally determined for 4 thicknesses (90 nm to 240 nm) by changing only the spin speed. The process latitude was found to be almost equivalent for sub-200 nm thick films, however, sub-100 nm thick films exhibited much higher LER than the thicker resist films. The performance of the 193 nm resist was compared to a 248 nm resist coated at thicknesses ranging from 104 nm to 260 nm. The 248 nm resist exhibited a decreasing trend in both exposure latitude and depth of focus with decreasing film thickness. Time-of-flight secondary ion mass spectrometry was used to investigate the distribution of PAG in the resist films. Some of the resist behavior of sub-150 nm thick films could be explained due to non-uniform PAG distribution.

Proceedings Article | 24 July 2002 Paper

Paper

Development and characterization of 193-nm ultra-thin resist process

Gilles Amblard, Richard Peters, Jonathan Cobb, Kunishige Edamatsu

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474227

KEYWORDS: Line edge roughness, Photoresist processing, 193nm lithography, Lithography, Semiconducting wafers, Fluorine, Scanning electron microscopy, Molecules, Scanners, Matrices

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Proceedings Article | 23 June 2000 Paper

Paper

193-nm photoresists at 130-nm node: which lithographic performances for which chemical platform?

Gilles Amblard, Jeff Byers, Wolf-Dieter Domke, Georgia Rich, Victoria Graffenberg, Shashikant Patel, Daniel Miller, Gabriel Perez

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388323

KEYWORDS: Monochromatic aberrations, Chlorine, Etching, Photoresist materials, Lithography, Silicon, Polymers, Critical dimension metrology, Semiconducting wafers, Aluminum

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Proceedings Article | 26 July 1999 Paper

Paper

0.18-um technology at contact level: deep-UV process development by tuning NA/o and using a bottom antireflective coating

Gilles Amblard, Jean-Paul Chollet

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354302

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Silicon, Photoresist processing, Critical dimension metrology, Bottom antireflective coatings, Oxides, Logic, Dielectrics

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Proceedings Article | 26 July 1999 Paper

Paper

Optical extension at the 193-nm wavelength

Peter Zandbergen, Martin McCallum, Gilles Amblard, Wolf-Dieter Domke, Bruce Smith, Lena Zavyalova, John Petersen

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354343

KEYWORDS: Fiber optic illuminators, Photomasks, 193nm lithography, Binary data, Lithography, Optical lithography, Phase shifts, Lithographic illumination, Photoresist processing, Optics manufacturing

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Proceedings Article | 11 June 1999 Paper

Paper

193-nm single-layer process for 150-nm technology generation and below

Gilles Amblard, Peter Zandbergen, Martin McCallum, Alan Stephen, Jeff Byers, Kim Dean, Jeff Meute, Carla Nelson-Thomas

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350270

KEYWORDS: Photoresist processing, Reflectivity, Lithography, Silicon, Semiconducting wafers, 193nm lithography, Photomasks, Binary data, Phase shifts, Organic materials

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Proceedings Article | 29 June 1998 Paper

Paper

Application of plasma-polymerized methylsilane for 0.18-um photolithography

Cedric Monget, Carol Lee, Olivier Joubert, Gilles Amblard, Timothy Weidman, Dian Sugiarto, John Yang, F. Cormont, R. Inglebert

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312426

KEYWORDS: Plasma, Optical lithography, Oxides, Etching, Photomasks, Chemical vapor deposition, Semiconducting wafers, Lithography, Plasma etching, Photoresist materials

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Proceedings Article | 29 June 1998 Paper

Paper

Lithographic evaluation of deep-UV photoresists for 0.25- and 0.18-um technology design rules

Gilles Amblard

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312461

KEYWORDS: Photoresist materials, Deep ultraviolet, Lithography, Manufacturing, Silicon

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Proceedings Article | 16 May 1994 Paper

Paper

Characterization of the development of DNO/novolac resists by surface energy measurements

Emilienne Fadda, Gilles Amblard, Andre Weill, Alain Prola

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175371

KEYWORDS: Photoresist developing, Liquids, Solids, Photoresist processing, Optical lithography, Photoresist materials, Semiconducting wafers, Interfaces, Scanning electron microscopy, Silicon

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Proceedings Article | 15 September 1993 Paper

Paper

Role of surface tension in silylation processes

Andre Weill, Patrick Paniez, Olivier Joubert, Francoise Debaene, Daniel Sage, Gilles Amblard, Michel Pons

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154759

KEYWORDS: Liquids, Plasma, Photoresist processing, Polymers, Thermodynamics, Plasma etching, Thermal effects, Thin film coatings, Head-mounted displays, Silicon

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Proceedings Article | 15 September 1993 Paper

Paper

Advanced i-line lithography: evaluation of a new chemical amplification negative resist

Gilles Amblard, Andre Weill, Christophe Brault

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154771

KEYWORDS: Photoresist processing, Etching, Lithography, Aluminum, Plasma, Reflectivity, Absorption, Chemistry, Bromine, Photoresist developing

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Proceedings Article | 9 July 1992 Paper

Paper

Comparative evaluation of e-beam charge-reducing processes

Gilles Amblard, Laurent Guerin, Frederic Lalanne, Jean-Pierre Panabiere, Michel Guillaume, Philippe Romand, Andre Weill

Proceedings Volume 1671, (1992) https://doi.org/10.1117/12.136038

KEYWORDS: Semiconducting wafers, Lithography, Photoresist processing, Silicon, Electron beams, Tungsten, Control systems, Distortion, Manufacturing, Ions

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Proceedings Article | 1 August 1991 Paper

Paper

Wet-developed, high-aspect-ratio resist patterns by 20-keV e-beam lithography

Andre Weill, Gilles Amblard, Frederic Lalanne, Jean-Pierre Panabiere

Proceedings Volume 1465, (1991) https://doi.org/10.1117/12.47363

KEYWORDS: Deep ultraviolet, Photoresist processing, Floods, Absorption, Image processing, Electron beam lithography, Lithography, X-ray lithography, X-rays, Manufacturing

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Showing 5 of 15 publications

Proceedings Volume Editor (2)

SPIE Conference Volume | 24 April 2024

Advances in Patterning Materials and Processes XLI

SPIE Conference Volume | 22 May 2023

Advances in Patterning Materials and Processes XL

Conference Committee Involvement (8)

Advances in Patterning Materials and Processes XLI

26 February 2024 | San Jose, California, United States

Advances in Patterning Materials and Processes XL

27 February 2023 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIX

25 April 2022 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXVIII

22 February 2021 | Online Only, California, United States

Advances in Patterning Materials and Processes XXXVII

24 February 2020 | San Jose, California, United States

Showing 5 of 8 Conference Committees

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