Dr. Jeffrey D. Byers Profile

Dr. Jeffrey D. Byers

Research Scientist at SEMATECH Inc

SPIE Involvement:

Author

Publications (65)

SPIE Journal Paper | 1 January 2009

Materials modeling and development for use in double-exposure lithography applications

Saul Lee, Kane Jen, C. Grant Willson, Jeffrey Byers, Paul Zimmerman, Nicholas Turro

JM3, Vol. 8, Issue 01, 011011, (January 2009) https://doi.org/10.1117/12.10.1117/1.3095589

KEYWORDS: Lithography, Picture Archiving and Communication System, Photomasks, Nonlinear response, Computer simulations, Imaging systems, Photons, Electroluminescence, Photoresist developing, Absorbance

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Proceedings Article | 15 April 2008 Paper

Development of an operational high refractive index resist for 193nm immersion lithography

Paul Zimmerman, Jeffrey Byers, Emil Piscani, Bryan Rice, Christopher Ober, Emmanuel Giannelis, Robert Rodriguez, Dongyan Wang, Andrew Whittaker, Idriss Blakey, Lan Chen, Bronwin Dargaville, Heping Liu

Proceedings Volume 6923, 692306 (2008) https://doi.org/10.1117/12.772871

KEYWORDS: Nanoparticles, Refractive index, Absorbance, Immersion lithography, Polymers, Lithography, Chemistry, Chlorine, Sulfur, Line edge roughness

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Proceedings Article | 15 April 2008 Paper

Development and evaluation of 193nm immersion generation-three fluid candidates

Paul Zimmerman, Jeffrey Byers, Bryan Rice, Christopher Ober, Emmanuel Giannelis, Robert Rodriguez, Dongyan Wang, Naphtali O’Connor, Xuegong Lei, Nicholas Turro, Vladimir Liberman, Stephen Palmacci, Mordechai Rothschild, Neal Lafferty, Bruce Smith

Proceedings Volume 6923, 69230A (2008) https://doi.org/10.1117/12.772887

KEYWORDS: Nanoparticles, Refractive index, Absorbance, Metals, Oxides, Water, Nanocomposites, Transparency, Polarizability, Ultraviolet radiation

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Proceedings Article | 1 April 2008 Paper

An analysis of double exposure lithography options

Saul Lee, Jeffrey Byers, Kane Jen, Paul Zimmerman, Bryan Rice, Nicholas Turro, C. Grant Willson

Proceedings Volume 6924, 69242A (2008) https://doi.org/10.1117/12.773030

KEYWORDS: Lithography, Photomasks, Electroluminescence, Optical lithography, Nonlinear response, Semiconducting wafers, Double patterning technology, Imaging systems, Resolution enhancement technologies, Computer simulations

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Proceedings Article | 1 April 2008 Paper

Continuing 193nm optical lithography for 32nm imaging and beyond

Emil Piscani, Dominic Ashworth, Jeff Byers, Chris Van Peski, Paul Zimmerman, Bryan Rice

Proceedings Volume 6924, 69242I (2008) https://doi.org/10.1117/12.775474

KEYWORDS: Prisms, Reflectivity, Photomasks, Semiconducting wafers, Imaging systems, Double patterning technology, Wafer-level optics, Remote sensing, Polarization, Optical lithography

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Proceedings Article | 28 March 2008 Paper

Film quantum yields of EUV and ultra-high PAG photoresists

Elsayed Hassanein, Craig Higgins, Patrick Naulleau, Richard Matyi, Gregg Gallatin, Gregory Denbeaux, Alin Antohe, Jim Thackeray, Kathleen Spear, Charles Szmanda, Christopher Anderson, Dimitra Niakoula, Matthew Malloy, Anwar Khurshid, Cecilia Montgomery, Emil Piscani, Andrew Rudack, Jeff Byers, Andy Ma, Kim Dean, Robert Brainard

Proceedings Volume 6921, 69211I (2008) https://doi.org/10.1117/12.774099

KEYWORDS: Quantum efficiency, Extreme ultraviolet lithography, Photoresist materials, Extreme ultraviolet, X-rays, Absorbance, Photons, Coating, Reflectometry, Line edge roughness

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Proceedings Article | 24 March 2008 Paper

Characterization of CD-SEM metrology for iArF photoresist materials

Benjamin Bunday, Aaron Cordes, N. Orji, Emil Piscani, Dan Cochran, Jeff Byers, John Allgair, Bryan Rice, Yohanan Avitan, Ram Peltinov, Maayan Bar-zvi, Ofer Adan

Proceedings Volume 6922, 69221A (2008) https://doi.org/10.1117/12.774317

KEYWORDS: Photoresist materials, Lithography, Metrology, Scanning electron microscopy, Semiconducting wafers, Atomic force microscopy, Roentgenium, Critical dimension metrology, Extreme ultraviolet, Cadmium

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Proceedings Article | 7 March 2008 Paper

High-index immersion lithography: preventing lens photocontamination and identifying optical behavior of LuAG

V. Liberman, M. Rothschild, S. Palmacci, R. Bristol, J. Byers, N. J. Turro, X. Lei, N. O'Connor, P. Zimmerman

Proceedings Volume 6924, 692416 (2008) https://doi.org/10.1117/12.771462

KEYWORDS: Contamination, Absorbance, Hydrogen, Microfluidics, Chemical elements, Laser irradiation, Absorption, Immersion lithography, Oxygen, Refractive index

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Proceedings Article | 5 April 2007 Paper

SEM metrology for advanced lithographies

Benjamin Bunday, John Allgair, Bryan Rice, Jeff Byers, Yohanan Avitan, Ram Peltinov, Maayan Bar-zvi, Ofer Adan, John Swyers, Roni Shneck

Proceedings Volume 6518, 65182B (2007) https://doi.org/10.1117/12.714203

KEYWORDS: Lithography, Photoresist materials, Metrology, Deep ultraviolet, Extreme ultraviolet lithography, Extreme ultraviolet, Scanning electron microscopy, 193nm lithography, Semiconducting wafers, Scanners

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Proceedings Article | 24 March 2006 Paper

Electron beam based modification of lithographic materials and the impact on critical dimensional metrology

H. Marchman, G. Lorusso, D. Soltz, L. Grella, Z. Luo, J. Byers, J. Varner, S. Vedula, R. Kuppa, A. Azordegan, G. Storms, L. Leunissen

Proceedings Volume 6152, 615227 (2006) https://doi.org/10.1117/12.656599

KEYWORDS: Electron beams, Polymers, Oxygen, Electron beam lithography, Lithography, Atomic force microscopy, Dimensional metrology, 193nm lithography, Monte Carlo methods, Critical dimension metrology

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Proceedings Article | 5 November 2005 Paper

Methods for benchmarking photolithography simulators: Part III

Mark Smith, Trey Graves, Jeffrey Byers, Chris Mack

Proceedings Volume 5992, 59925H (2005) https://doi.org/10.1117/12.634465

KEYWORDS: Photomasks, Diffraction, Maxwell's equations, Lithography, Computer simulations, Quartz, Diffraction gratings, Finite-difference time-domain method, Dielectric polarization, Optical lithography

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Proceedings Article | 12 May 2005 Paper

The impact of mask topography on binary reticles at the 65nm node

Mark Smith, Trey Graves, Jeffrey Byers, Chris Mack

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601523

KEYWORDS: Photomasks, Maxwell's equations, Reticles, Binary data, Cadmium, Optical proximity correction, Optical properties, Fiber optic illuminators, Lithography, Scattering

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Proceedings Article | 12 May 2005 Paper

Methods for benchmarking photolithography simulators: part III

Mark Smith, Trey Graves, Jeffrey Byers, Chris Mack

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601518

KEYWORDS: Photomasks, Diffraction, Maxwell's equations, Lithography, Computer simulations, Quartz, Diffraction gratings, Optical lithography, Dielectrics, Transmittance

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Proceedings Article | 6 December 2004 Paper

The impact of mask topography on binary reticles at the 65-nm node

Mark Smith, Jeffrey Byers, Chris Mack

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569489

KEYWORDS: Photomasks, Maxwell's equations, Reticles, Binary data, Cadmium, Optical proximity correction, Optical properties, Fiber optic illuminators, Lithography, Scattering

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Proceedings Article | 28 May 2004 Paper

Methods for benchmarking photolithography simulators: part II

Mark Smith, Jeffrey Byers, Chris Mack

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537584

KEYWORDS: Reflectivity, Polarization, Computer simulations, Interfaces, Optical lithography, Photoresist materials, Liquids, Refraction, Nanoimprint lithography, Error analysis

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Proceedings Article | 28 May 2004 Paper

Lumped parameter model for chemically amplified resists

Jeffrey Byers, Mark Smith, Chris Mack

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537583

KEYWORDS: 3D modeling, Diffusion, Chemically amplified resists, Finite-difference time-domain method, Image processing, Systems modeling, Absorbance, Photoresist processing, 3D image processing, Lithography

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Proceedings Article | 28 May 2004 Paper

Modeling of reactive soluble ARCs and photoresist-ARC interaction

John Biafore, Mark Neisser, Gary dela Pena, Jeffrey Byers, Medhat Toukhy, Joseph Oberlander

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536748

KEYWORDS: Diffusion, Mathematical modeling, Photoresist materials, Composites, Dubnium, Photoresist developing, Amplifiers, Computer simulations, Data modeling, Antireflective coatings

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Proceedings Article | 28 May 2004 Paper

Exploring the capabilities of immersion lithography through simulation

Chris Mack, Jeffrey Byers

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537704

KEYWORDS: Polarization, Immersion lithography, Refractive index, Semiconducting wafers, Lithography, Reflection, Sodium, Diffraction, 193nm lithography, Photomasks

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Proceedings Article | 14 May 2004 Paper

The lithographic impact of resist model parameters

Mark Smith, Jeffrey Byers, Chris Mack

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537581

KEYWORDS: Polymers, Amplifiers, Absorbance, Diffusion, Lithography, Photoresist materials, Resist chemistry, Chemistry, Physics, Photoresist processing

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Proceedings Article | 14 May 2004 Paper

Understanding the role of base quenchers in photoresists

Timothy Michaelson, Andrew Jamieson, Adam Pawloski, Jeffrey Byers, Alden Acheta, C. Willson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537658

KEYWORDS: Photoresist materials, Line edge roughness, Critical dimension metrology, Optical lithography, Polymers, Mathematical modeling

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Proceedings Article | 26 June 2003 Paper

Theoretical corner rounding analysis and mask writer simulation

Robert Jones, Jeffrey Byers

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485538

KEYWORDS: Photomasks, Diffusion, Lithography, Scanning electron microscopy, Reticles, Imaging systems, Process modeling, Convolution, Computer simulations, Data modeling

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Proceedings Article | 12 June 2003 Paper

Resist requirements in the era of resolution enhancement techniques

John Petersen, Jeffrey Byers

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.487728

KEYWORDS: Photomasks, Resolution enhancement technologies, Picosecond phenomena, Diffusion, Chemically amplified resists, Lithography, Imaging systems, Image processing, Diffraction, Optical lithography

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Proceedings Article | 12 June 2003 Paper

Modeling soft-bake effects in chemically amplified resists

Jeff Byers, Mark Smith, Chris Mack, John Biafore

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485205

KEYWORDS: Diffusion, Polymers, Photoresist processing, Chemically amplified resists, Polymer thin films, Molecules, Refractive index, Lithography, Glasses, Process modeling

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Proceedings Article | 2 June 2003 Paper

Top-down versus cross-sectional SEM metrology and its impact on lithography simulation calibration

Robert Jones, Jeff Byers, Will Conley

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485041

KEYWORDS: Metrology, Scanning electron microscopy, Cadmium, Lithography, Data modeling, Computer simulations, Monte Carlo methods, Calibration, Shape analysis, Line scan image sensors

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Proceedings Article | 2 June 2003 Paper

Improved model for focus-exposure data analysis

Chris Mack, Jeff Byers

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485040

KEYWORDS: Lithography, Data modeling, Critical dimension metrology, Nanoimprint lithography, Data analysis, Matrices, Physics, Statistical analysis, Tolerancing, Data centers

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Proceedings Article | 30 July 2002 Paper

Etch simulations for lithography engineers

Robert Jones, Chris Mack, Jeff Byers

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474504

KEYWORDS: Etching, Lithography, Ions, Wavefronts, Visibility, Data modeling, Silicon, Sputter deposition, Metrology, Cadmium

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Proceedings Article | 30 July 2002 Paper

Tuning and simulating a 193-nm resist for 2D applications

William Howard, Vincent Wiaux, Monique Ercken, Bang Bui, Jeff Byers, Mike Pochkowski

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474499

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Optical proximity correction, Metrology, Reticles, Finite element methods, Data modeling, Lithography, 3D image processing

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Proceedings Article | 30 July 2002 Paper

Comparison between the process windows calculated with full and simplified resist models

Mark Smith, Jeff Byers, Chris Mack

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474501

KEYWORDS: Mathematical modeling, Diffusion, Photoresist materials, Data modeling, Absorbance, Polymers, Lithography, Photoresist developing, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 30 July 2002 Paper

3D lumped parameter model for lithographic simulations

Jeff Byers, Mark Smith, Chris Mack

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474490

KEYWORDS: 3D modeling, Photomasks, Lithography, Absorbance, 3D image processing, Image segmentation, Chemically amplified resists, Data modeling, Databases, Diffusion

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Proceedings Article | 24 July 2002 Paper

Parameter extraction for 157-nm photoresists

Joseph Bendik, Will Conley, Daniel Miller, Paul Zimmerman, Kim Dean, John Petersen, Jeff Byers

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474174

KEYWORDS: Lithography, Photoresist materials, Data modeling, Absorption, Systems modeling, FT-IR spectroscopy, Metrology, Transparency, Scanning electron microscopy, Opacity

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Proceedings Article | 24 July 2002 Paper

Calibration of ESCAP resist simulation parameters from consideration of printed CD pitch bias, CD measurement offset and wafer thermal history

Stewart Robertson, Doris Kang, Steven Tye, Steven Hansen, Anita Fumar-Pici, Tsann-Bim Chiou, Jeff Byers, Chris Mack, Mark Smith

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474170

KEYWORDS: Semiconducting wafers, Diffusion, Scanning electron microscopy, Finite element methods, Calibration, Photomasks, Data modeling, Temperature metrology, Photoresist materials, Lithography

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Proceedings Article | 24 August 2001 Paper

Perfect photoresist for 157nm imaging

Will Conley, Jeff Byers, Kim Dean, Steven Hansen, Jo Finders, Stephan Sinkwitz

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436864

KEYWORDS: Photoresist materials, Absorbance, Data modeling, Manufacturing, Photoresist developing, Imaging devices, Diffusion, Reticles, Deep ultraviolet, Calibration

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Chemically amplified photoresists where first created for broadband deep UV imaging, then used for monochromatic KrF excimer laser light, then ArF and now F₂ for 157nm imaging. With this experience we may able to build The Perfect Photoresist. This may sound ridiculous, however, take a good look at the SIA roadmap, and the timing in which 157nm imaging will be needed. There are numerous arguments regarding 157nm insertion, some say 100nm and others say the 70nm node; regardless of the timing it is approaching quickly. The time allowed to develop such technology is decreasing. If we recall back to the early 1980's when deep UV (248nm) materials development started, it has taken nearly 10-12 years to perfect them. ArF materials, whose development began in the early 90's, will take approximately 8 years before reaching manufacturing (and there is still great improvement needed). Now let's focus on the timeline for 157nm resist: its development began in 1999 and it must be ready for early manufacturing by the end of 2004. Most, if not all, photoresist companies have plans to develop photoresist technology for 157nm. Many of these solutions are based on existing KrF or ArF materials technology with modifications to meet optical density requirements for 157nm. Considering the implementation node for this technology (let's assume 70nm), films thickness' will most likely not exceed 250nm and in most cases range from 150nm to 200nm. These films thicknesses bring on new and unique challenges, however, they can be managed. The authors will take into consideration three different types of device level imaging: gate, trench and contact holes for single layer imaging. Through the use of designed simulation experiments and existing data we will construct different photoresist models to meet the requirements for these device levels. We'll plan to test whether resist models calibrated at 248nm can be extrapolated to 157nm. The authors will also explore the question of optical density (B parameter), chemical contrast, exposed & unexposed film dissolution along with acid diffusion to provide the insight that can aid in developing materials for the photoresists composition. We will investigate the use of binary and attenuated reticles with various illumination conditions over several substrates, to provide insight into designing The Perfect Photoresist for 157nm Imaging.

Proceedings Article | 26 April 2001 Paper

Automatic calibration of lithography simulation parameters

Sven Jug, Richard Huang, Jeff Byers, Chris Mack

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425230

KEYWORDS: Calibration, Lithography, Data modeling, Computer simulations, Reflectivity, Refractive index, Matrices, Critical dimension metrology, Absorbance, Deep ultraviolet

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Proceedings Article | 20 October 2000 Paper

Hardmask/BARC materials for 157-nm lithography

Won Kim, Daniel Miller, Hyeong-Soo Kim, Jeff Byers, Mike Daniels, Britton Birmingham, James Tompkins

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404844

KEYWORDS: Etching, Lithography, Dielectrics, Silicon, Silicon carbide, Optical lithography, Absorption, Photoresist processing, Tin, Semiconducting wafers

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