PROCEEDINGS VOLUME 4288
SYMPOSIUM ON INTEGRATED OPTICS | 20-26 JANUARY 2001
Photodetectors: Materials and Devices VI
SYMPOSIUM ON INTEGRATED OPTICS
20-26 January 2001
San Jose, CA, United States
New Materials and Defect Issues
Proc. SPIE 4288, Recent developments in biologically inspired seeker technology, 0000 (12 June 2001); doi: 10.1117/12.429394
Mercury Cadmium Telluride Photodetectors
Proc. SPIE 4288, Novel Sb-based alloy for uncooled infrared photodetector applications, 0000 (12 June 2001); doi: 10.1117/12.429414
High-Speed Detectors for Optoelectronics
Proc. SPIE 4288, InP/InGaAs-based hi-lo avalanche photodetectors for high-speed optical communications, 0000 (12 June 2001); doi: 10.1117/12.429423
Proc. SPIE 4288, Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode, 0000 (12 June 2001); doi: 10.1117/12.429436
Proc. SPIE 4288, Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodes, 0000 (12 June 2001); doi: 10.1117/12.429437
Proc. SPIE 4288, Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors, 0000 (12 June 2001); doi: 10.1117/12.429438
Proc. SPIE 4288, Low-capacitance photoconductive detectors for extremely low optical power fabricated by focused ion-beam doping and overgrowth, 0000 (12 June 2001); doi: 10.1117/12.429439
Proc. SPIE 4288, High-speed low-energy photoconductive receiver with high gain, 0000 (12 June 2001); doi: 10.1117/12.429395
Proc. SPIE 4288, InGaAs on GaAs extended wavelength linear detector arrays, 0000 (12 June 2001); doi: 10.1117/12.429396
Uncooled Photodetectors
Proc. SPIE 4288, Process development of fast and sensitive polySiGe microbolometer arrays, 0000 (12 June 2001); doi: 10.1117/12.429397
Proc. SPIE 4288, Uncooled infrared detector technology from research to production within six months, 0000 (12 June 2001); doi: 10.1117/12.429398
Proc. SPIE 4288, Uncooled microbolometer infrared focal plane array in standard CMOS, 0000 (12 June 2001); doi: 10.1117/12.429399
Proc. SPIE 4288, Novel macroporous silicon structures as light emission and sensor elements, 0000 (12 June 2001); doi: 10.1117/12.429400
Quantum Well Infrared Photodetectors
Proc. SPIE 4288, Quantum dot intersubband photodetectors, 0000 (12 June 2001); doi: 10.1117/12.429402
Proc. SPIE 4288, Investigation of supperlattice infrared photodetectors to reach the background-limited performance at high temperature, 0000 (12 June 2001); doi: 10.1117/12.429403
Superlattices for Infrared Detectors
Proc. SPIE 4288, Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family, 0000 (12 June 2001); doi: 10.1117/12.429404
Proc. SPIE 4288, Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors, 0000 (12 June 2001); doi: 10.1117/12.429405
Proc. SPIE 4288, High-performance type-II InAs/GaSb superlattice photodiodes, 0000 (12 June 2001); doi: 10.1117/12.429406
Proc. SPIE 4288, InAs/InGaSb superlattices for very long wavelength infrared detection, 0000 (12 June 2001); doi: 10.1117/12.429407
Photodiodes for Ultraviolet Detection
Proc. SPIE 4288, GaN deep-level capture barriers, 0000 (12 June 2001); doi: 10.1117/12.429408
Proc. SPIE 4288, AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications, 0000 (12 June 2001); doi: 10.1117/12.429409
Proc. SPIE 4288, AlGaN Schottky diodes for short-wavelength UV applications, 0000 (12 June 2001); doi: 10.1117/12.429410
Proc. SPIE 4288, Optical investigation of InGaAsN structures for photodetector applications, 0000 (12 June 2001); doi: 10.1117/12.429411
Competition of Infrared Detector Technologies
Proc. SPIE 4288, Fundamental physics of infrared detector materials, 0000 (12 June 2001); doi: 10.1117/12.429412
Proc. SPIE 4288, HgCdTe photodiodes for IR detection: a review, 0000 (12 June 2001); doi: 10.1117/12.429413
Proc. SPIE 4288, Large-format long-wavelength GaAs/AlGaAs multiquantum well infrared detector arrays for astronomy, 0000 (12 June 2001); doi: 10.1117/12.429415
Proc. SPIE 4288, Silicon infrared focal plane arrays, 0000 (12 June 2001); doi: 10.1117/12.429416
Proc. SPIE 4288, Uncooled infrared imaging using thin film ferroelectrics, 0000 (12 June 2001); doi: 10.1117/12.429417
Mercury Cadmium Telluride Photodetectors
Proc. SPIE 4288, HgCdTe photodiodes with state-of-the-art performance in the near- infrared spectral region, 0000 (12 June 2001); doi: 10.1117/12.429418
Proc. SPIE 4288, Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes, 0000 (12 June 2001); doi: 10.1117/12.429419
Proc. SPIE 4288, Properties of 2x64 linear HgCdTe MBE-grown LWIR arrays with CCD silicon readouts, 0000 (12 June 2001); doi: 10.1117/12.429420
Novel Photodetectors
Proc. SPIE 4288, Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers, 0000 (12 June 2001); doi: 10.1117/12.429421
Proc. SPIE 4288, Heterojunction interfacial workfunction detectors for far-infrared applications, 0000 (12 June 2001); doi: 10.1117/12.429422
Proc. SPIE 4288, Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: a comparative study, 0000 (12 June 2001); doi: 10.1117/12.429424
Proc. SPIE 4288, Improvement of low-temperature sensing realized with a superlattice infrared photodetector, 0000 (12 June 2001); doi: 10.1117/12.429425
Quantum Well Infrared Photodetectors
Proc. SPIE 4288, Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate, 0000 (12 June 2001); doi: 10.1117/12.429426
High-Speed Detectors for Optoelectronics
Proc. SPIE 4288, Time-domain modeling of InP/InGaAs avalanche photodiodes, 0000 (12 June 2001); doi: 10.1117/12.429427
Mercury Cadmium Telluride Photodetectors
Proc. SPIE 4288, HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxy, 0000 (12 June 2001); doi: 10.1117/12.429428
Novel Photodetectors
Proc. SPIE 4288, Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approach, 0000 (12 June 2001); doi: 10.1117/12.429429
Proc. SPIE 4288, Bragg reflector for GaAs solar cells on Ge substrate, 0000 (12 June 2001); doi: 10.1117/12.429430
Proc. SPIE 4288, Detectivity of thin film NTC infrared sensors, 0000 (12 June 2001); doi: 10.1117/12.429431
Proc. SPIE 4288, Optical fiber video transmission system, 0000 (12 June 2001); doi: 10.1117/12.429432
Photodiodes for Ultraviolet Detection
Proc. SPIE 4288, Progress in the fabrication of GaN photocathodes, 0000 (12 June 2001); doi: 10.1117/12.429433
High-Speed Detectors for Optoelectronics
Proc. SPIE 4288, Theoretical approach to frequency response of resonant-cavity avalanche photodiodes, 0000 (12 June 2001); doi: 10.1117/12.429434
Novel Photodetectors
Proc. SPIE 4288, Why QDIPs are still inferior to QWIPs: theoretical analysis, 0000 (12 June 2001); doi: 10.1117/12.429435
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