Step and Flash Imprint Lithography (SFIL) is an alternative lithography technique that enables patterning of sub-100 nm features at a cost that has the potential to be substantially lower than either conventional projection lithography or proposed next generation lithography techniques. SFIL is a molding process that transfers the topography of a rigid transparent template using a low-viscosity, UV-curable organosilicon solution at room temperature and with minimal applied pressure. Employing SFIL technology we have successfully patterned areas of high and low density, semi-dense and isolated lines down to 20 nm, and demonstrated the capability of layer-to-layer alignment. We have also confirmed the use of SFIL to produce functional optical devices including a micropolarizer array consisting of orthogonal 100 nm titanium lines and spaces fabricated using a metal lift-off process. This paper presents a demonstration of the SFIL technique for the patterning of the gate level in a functional MOSFET device.
Recent work on Step and Flash Imprint Lithography (SFIL) has been focused on process and materials fundamentals and demonstration of resolution capability. Etch transfer rpocesses have been developed that are capable of transferring imprinted images though 150 nm of residual etch barrier, yielding sub 50 nm lines with aspect ratios greater than 8:1. A model has been developed for the photoinitiated, free radical curing of the acrylate etch barrier materials that have been used in the SFIL process. This model includes the effects of oxygen transport on the kinetics of the reaction and yields a deeper understanding of the importance of oxygen inhibition, and the resulting impact of that process on throughput and defect generation. This understanding has motivated investigation of etch barrier materials such as vinyl ethers that are cured by a cationic mechanism, which does not exhibit these same effects. Initial work on statistical defect analysis has is reported and it does not reveal pathological trends.