Mr. Kevin J. Nordquist Profile

Kevin J. Nordquist

Research Engineer at Motorola Inc

SPIE Involvement:

Author

Publications (29)

Proceedings Article | 15 March 2007 Paper

An electrical defectivity characterization of wafers imprinted with step and flash imprint lithography

W. Dauksher, N. Le, K. Gehoski, E. Ainley, K. Nordquist, N. Joshi

Proceedings Volume 6517, 651714 (2007) https://doi.org/10.1117/12.712376

KEYWORDS: Semiconducting wafers, Resistance, Lithography, Scanning electron microscopy, Etching, Wafer-level optics, Particles, Optical inspection, Manufacturing, Quartz

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Proceedings Article | 20 October 2006 Paper

Direct die-to-database electron-beam inspection of fused silica imprint templates

M. Tsuneoka, T. Hasebe, T. Tokumoto, C. Yan, M. Yamamoto, D. Resnick, E. Thompson, H. Wakamori, M. Inoue, Eric Ainley, Kevin Nordquist, William Dauksher

Proceedings Volume 6349, 63492D (2006) https://doi.org/10.1117/12.687196

KEYWORDS: Inspection, Silica, Semiconducting wafers, Metals, Lithography, Scanning electron microscopy, Photomasks, Chromium, Logic, Etching

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Proceedings Article | 24 March 2006 Paper

Imprint technology: A potential low-cost solution for sub-45nm device applications

Ngoc Le, William Dauksher, Kathy Gehoski, Kevin Nordquist, Eric Ainley, Pawitter Mangat

Proceedings Volume 6151, 61512K (2006) https://doi.org/10.1117/12.657488

KEYWORDS: Etching, Lithography, Oxides, Critical dimension metrology, Nanoimprint lithography, Scanning electron microscopy, Semiconducting wafers, Printing, Silicon, Plasma

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Proceedings Article | 23 March 2006 Paper

Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates

S. Young, W. Dauksher, K. Nordquist, E. Ainley, K. Gehoski, A. Graupera, M. Moriarty

Proceedings Volume 6151, 61511D (2006) https://doi.org/10.1117/12.659529

KEYWORDS: Quartz, Chromium, Etching, Scanning electron microscopy, Photomasks, Atomic force microscopy, Image processing, Opacity, Semiconducting wafers, Lithography

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Proceedings Article | 23 March 2006 Paper

Defect inspection for imprint lithography using a die to database electron beam verification system

L. Jeff Myron, Ecron Thompson, Ian McMackin, Douglas Resnick, Tadashi Kitamura, Toshiaki Hasebe, Shinichi Nakazawa, Toshifumi Tokumoto, Eric Ainley, Kevin Nordquist, William Dauksher

Proceedings Volume 6151, 61510M (2006) https://doi.org/10.1117/12.659457

KEYWORDS: Inspection, Metals, Lithography, Silica, Logic, Semiconducting wafers, Defect detection, Photomasks, Chromium, Databases

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Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and Flash Imprint Lithography (S-FIL^TM) is a unique method for printing sub-100nm geometries. Relative to other imprinting processes S-FIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. Further, S-FIL provides sub-100nm feature resolution without the significant expense of multielement, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. With respect to inspection, although defects as small as 70nm have been detected using optical techniques, it is clear that it will be necessary to take advantage of the resolution capabilities of electron beam inspection techniques. This paper reports the first systematic study of die-to-database electron beam inspection of patterns that were imprinted using an Imprio 250 system. The die-to-database inspection of the wafers was performed on an NGR2100 inspection system. Ultimately, the most desirable solution is to directly inspect the fused silica template. This paper also reports the results on the first initial experiments of direct inspection fused silica substrates at data rates of 200 MHz. Three different experiments were performed. In the first study, large (350-400nm) Metal 1 and contact features were imprinted and inspected as described above. Using a 12 nm pixel address grid, 24 nm defects were readily detected. The second experiment examined imprinted Metal 1 and Logic patterns with dimensions as small as 70nm. Using a pixel address of 3nm, and a defect threshold of 20 nm, a systematic study of the patterned arrays identified problem areas in the design of the pattern layout. Finally, initial inspection of 200mm fused silica patterned substrates has established proof of concept for direct inspection of imprint templates.

Proceedings Article | 6 May 2005 Paper

Indium tin oxide template development for step and flash imprint lithography

Kathleen Gehoski, Douglas Resnick, William Dauksher, Kevin Nordquist, Eric Ainley, Mark McCord, Mark Raphaelian, Harald Hess

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.606102

KEYWORDS: Chromium, Inspection, Etching, Lithography, Electron beams, Oxides, Indium, Tin, Quartz, Electron beam lithography

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Proceedings Article | 6 December 2004 Paper

Inspection and repair issues for Step and Flash Imprint Lithography templates

Kevin Nordquist, William Dauksher, David Mancini, Douglas Resnick, Harald Hess, Donald Pettibone, David Adler, Kirk Bertsche, Roy White, Jeffrey Csuy, David Lee

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569846

KEYWORDS: Inspection, Scanning electron microscopy, Photomasks, Semiconducting wafers, Oxides, Lithography, Etching, Deep ultraviolet, Quartz, Atomic force microscopy

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Step and Flash Imprint Lithography (S-FIL) 1X templates must eventually achieve and maintain the very low defect counts commensurate to current production masks. This requires typically fewer than ten or even no defects over the entire field and to minimize template fabrication costs and techniques must be identified to repair defects on templates when they do occur. We describe inspection and repair methodologies and how it can be applied to the imprint template. For inspection, test patterns etched onto the template enable both a die-to-die comparison, to find nuisance defects, and also calibration of sensitivity to different types of preprogrammed defects. A state of the art deep UV photomask inspection system (KLA-Tencor model 526) can detect these events with about 70 nm threshold for imprint masks using reflection mode contrast. Initial scans are made at various stages of the imprint process: the processed mask, after dicing, and after several imprints. The scans show mostly isolated point defects at a density of ~ 10 to 100 per mm². To repair defects, studies were undertaken using RAVE’s nm650 tool which is essentially an AFM platform that relies upon a nano-machining technique for opaque defect removal. On S-FIL templates, the standard deviation for depth repairs in quartz from the target depth was found to be 3.1 nm (1σ). The spread in edge placement data for opaque line protrusions was 21.5 nm (1σ). Trench cuts through lines were successfully created with a minimum size of about 55nm. The repairs on the template were verified by imprinting the features on wafers. The range of depth offsets studied (-15 to +15) had no bearing on the imprinting process and the edge placement on wafers replicated the edge placement of the repaired templates. Trench cuts on the template were successfully filled with the imprint monomer and measured slightly larger than the minimum gap size. Finally, the imprinted wafers were used to pattern transfer features into 100nm of oxide.

Proceedings Article | 2 June 2004 Paper

Shaped beam technology for nano-imprint mask lithography

Peter Hudek, Dirk Beyer, Timothy Groves, Olaf Fortagne, William Dauksher, David Mancini, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568035

KEYWORDS: Electron beam lithography, Lithography, Photomasks, Photoresist processing, Etching, Chromium, Beam shaping, Nanotechnology, Image processing, Semiconducting wafers

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Proceedings Article | 20 May 2004 Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Ryan Burns, Stephen Johnson, Gerard Schmid, Eui Kim, Michael Dickey, Jason Meiring, Sean Burns, Nicholas Stacey, C. Grant Willson, Diana Convey, Yi Wei, Peter Fejes, Kathleen Gehoski, David Mancini, Kevin Nordquist, William Dauksher, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 20 May 2004 Paper

Sub-80-nm contact hole patterning using Step and Flash Imprint Lithography

David Mancini, Ngoc Le, Kathleen Gehoski, Steven Young, William Dauksher, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537382

KEYWORDS: Etching, Lithography, Silicon, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Quartz, Oxides, Photomasks, Printing

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SPIE Journal Paper | 1 April 2004

Step and flash imprint lithography (S-FIL) is an attractive method for printing sub-100-nm geometries. Relative to other imprinting processes, S-FIL has the advantage of the template being transparent, thereby facilitating conventional overlay techniques.

Douglas Resnick, David Mancini, Kevin Nordquist, William Dauksher, Ian McMackin, Philip Schumaker, Ecron Thompson, S. Sreenivasan

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683261

KEYWORDS: Lithography, Printing, Etching, Semiconducting wafers, Photoresist processing, Image processing, Chromium, Distortion, Scanning electron microscopy, Silica

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Proceedings Article | 17 December 2003 Paper

CD uniformity dependence on CAR PEB process and its improvement for EUVL mask fabrication

Bing Lu, James Wasson, Eric Weisbrod, Pawitter Mangat, Eric Ainley, Adolpho Rios, Kevin Nordquist

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517989

KEYWORDS: Critical dimension metrology, Extreme ultraviolet lithography, Mask making, Photoresist processing, Diffusion, Ultraviolet radiation, Lutetium, Electron beam lithography, Quartz, Semiconducting wafers

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Proceedings Article | 17 December 2003 Paper

Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518307

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Printing, Lithography, Etching, Photoresist processing, Cadmium, Scanning electron microscopy, Quartz, Electron beam lithography

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Proceedings Article | 17 December 2003 Paper

Effects of reticle reflectance on lithography

Kevin Cummings, Bernd Geh, Bing Lu, James Wasson, Eric Weisbrod, William Dauksher, Kevin Nordquist, Pawitter Mangat

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.516925

KEYWORDS: Photomasks, Reflectivity, Semiconducting wafers, Reticles, Reflection, Lithography, Quartz, Light scattering, Critical dimension metrology, Chromium

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Proceedings Article | 26 June 2003 Paper

Single-write self-aligned rim-phase-shift process

Cesar Garza, Wei Wu, Bernard Roman, Pawitter Mangat, Kevin Nordquist, William Dauksher

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485427

KEYWORDS: Phase shifts, Lithography, Photomasks, Optical lithography, Quartz, Inspection, Etching, Critical dimension metrology, Optical proximity correction, Manufacturing

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Proceedings Article | 16 June 2003 Open Access

Imprint lithography: lab curiosity or the real NGL

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Todd Bailey, Stephen Johnson, Nicholas Stacey, John Ekerdt, C. Grant Willson, S. Sreenivasan, Norman Schumaker

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490126

KEYWORDS: Etching, Lithography, Semiconducting wafers, Silicon, Nanoimprint lithography, Chromium, Optical alignment, Image processing, Oxides, Inspection

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Proceedings Article | 16 June 2003 Paper

Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication

Bing Lu, Eric Weisbrod, Pawitter Mangat, Kevin Nordquist, Eric Ainley

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.504553

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Critical dimension metrology, Semiconducting wafers, Mask making, Etching, Photoresist processing, Extreme ultraviolet, Silicon, Chemically amplified resists

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Proceedings Article | 16 June 2003 Paper

Analysis of critical dimension uniformity for Step and Flash imprint lithography

David Mancini, Kathleen Gehoski, William Dauksher, Kevin Nordquist, Douglas Resnick, Philip Schumaker, Ian McMackin

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484923

KEYWORDS: Semiconducting wafers, Lithography, Critical dimension metrology, Scanning electron microscopy, Quartz, Etching, Cadmium, Photomasks, Chromium, Photoresist processing

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Proceedings Article | 16 June 2003 Paper

Advances in Step and Flash imprint lithography

Stephen Johnson, Todd Bailey, Michael Dickey, Britain Smith, Eunha Kim, Andrew Jamieson, Nicholas Stacey, John Ekerdt, C. Grant Willson, David Mancini, William Dauksher, Kevin Nordquist, Douglas Resnick

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484985

KEYWORDS: Etching, Oxygen, Lithography, Polymerization, Silicon, Data modeling, Semiconducting wafers, Statistical analysis, Inspection, Materials processing

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Proceedings Article | 16 June 2003 Paper

Employing Step and Flash imprint lithography for gate-level patterning of a MOSFET device

Britain Smith, Nicholas Stacey, J. Donnelly, David Onsongo, Todd Bailey, Chris Mackay, Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, S. Sreenivasan, Sanjay Banerjee, John Ekerdt, Grant Willson

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490142

KEYWORDS: Etching, Lithography, Field effect transistors, Optical alignment, Semiconducting wafers, Optical lithography, Photomasks, Oxides, Reactive ion etching, Halogens

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Proceedings Article | 27 December 2002 Paper

Image placement error due to pattern transfer for EUV masks

Zorian Masnyj, James Wasson, Bing Lu, Eric Weisbrod, Pawitter Mangat, Kevin Nordquist, Eric Ainley, William Dauksher, Douglas Resnick

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.477479

KEYWORDS: Photomasks, Extreme ultraviolet, Chromium, Distortion, Lithography, Extreme ultraviolet lithography, Etching, Image processing, Reticles, Semiconducting wafers

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Proceedings Article | 27 December 2002 Paper

Critical dimension and image placement issues for step and flash imprint lithography templates

Kevin Nordquist, David Mancini, William Dauksher, Eric Ainley, Kathleen Gehoski, Douglas Resnick, Zorian Masnyj, Pawitter Mangat

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467753

KEYWORDS: Quartz, Chromium, Distortion, Overlay metrology, Lithography, Image processing, Photomasks, Critical dimension metrology, Fabrication, Etching

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SPIE Journal Paper | 1 October 2002

High resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, B. Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1508410

KEYWORDS: Lithography, Scanning electron microscopy, Glasses, Printing, Overlay metrology, Distortion, Chromium, Photomasks, Solids, Defect inspection

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Proceedings Article | 24 July 2002 Paper

Sub-100 nm T-gates utilizing a single E-beam lithography exposure process

Eric Ainley, Scott Ageno, Kevin Nordquist, Douglas Resnick

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474192

KEYWORDS: Photoresist processing, Polymethylmethacrylate, Metals, Electron beam lithography, Bridges, Coating, Monte Carlo methods, Resistance, Capacitance, Etching

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Proceedings Article | 24 July 2002 Paper

New methods for fabricating step and flash imprint lithography templates

Douglas Resnick, Todd Bailey, David Mancini, Kevin Nordquist, William Dauksher, Eric Ainley, A. Talin, Kathleen Gehoski, Jeff Baker, Byung Choi, Stephen Johnson, Matthew Colburn, Mario Meissl, S. Sreenivasan, John Ekerdt, C. Grant Willson

Proceedings Volume 4608, (2002) https://doi.org/10.1117/12.437269

KEYWORDS: Etching, Chromium, Oxides, Semiconducting wafers, Quartz, Glasses, Scanning electron microscopy, Lithography, Printing, Photomasks

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Proceedings Article | 1 July 2002 Paper

High-resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, Byung Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472293

KEYWORDS: Etching, Quartz, Chromium, Scanning electron microscopy, Photomasks, Semiconducting wafers, Glasses, Lithography, Printing, Oxides

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Proceedings Article | 20 August 2001 Paper

Evaluation of Shipley XP2040D positive chemically amplified resist for SCALPEL mask fabrication

Bing Lu, Zorian Masnyj, Pawitter Mangat, Kevin Nordquist, Eric Ainley, Douglas Resnick

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436703

KEYWORDS: Critical dimension metrology, Photomasks, Charged-particle lithography, Mask making, Silicon, Line edge roughness, Photoresist processing, Chemically amplified resists, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 21 July 2000 Paper

Evaluation of negative DUV resist UVN30 for electron-beam exposure of NGL masks

Zorian Masnyj, Pawitter Mangat, Eric Ainley, Kevin Nordquist, Douglas Resnick

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390090

KEYWORDS: Critical dimension metrology, Photomasks, Line edge roughness, Mask making, Deep ultraviolet, Thin film coatings, Photoresist processing, Lithography, Semiconducting wafers, Manufacturing

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Proceedings Article | 27 May 1996 Paper

Development of two new positive DUV photoresists for use with direct-write e-beam lithography

David Mancini, Douglas Resnick, Kevin Nordquist, William Dauksher, James Thackeray, Mark McCord

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240461

KEYWORDS: Ultraviolet radiation, Semiconducting wafers, Deep ultraviolet, Etching, Electron beam lithography, Photoresist materials, Lithography, Silicon, Photoresist processing, Polymers

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Showing 5 of 29 publications

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