Dr. Uwe A. Griesinger Profile

Dr. Uwe A. Griesinger

at Infineon Technologies AG

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 21 June 2006 Paper

Mask data volume: historical perspective and future requirements

Chris Spence, Scott Goad, Peter Buck, Richard Gladhill, Russell Cinque, Jürgen Preuninger, Üwe Griesinger, Martin Blöcker

Proceedings Volume 6281, 62810H (2006) https://doi.org/10.1117/12.692639

KEYWORDS: Optical proximity correction, Photomasks, Vestigial sideband modulation, Logic, SRAF, Reticles, Resolution enhancement technologies, Manufacturing, Metals, Data storage

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Proceedings Article | 27 December 2002 Paper

Negative chemically amplified resist (nCAR) for DRAM mask fabrications

Martin Tschinkl, Christian Buergel, Uwe Griesinger, Barbara Jeansannetas, Armelle Vix

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467429

KEYWORDS: Opacity, Line edge roughness, Coating, Critical dimension metrology, Chemically amplified resists, Photoresist processing, Mask making, Vestigial sideband modulation, Error analysis, Electron beams

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Proceedings Article | 1 August 2002 Paper

Alternating phase-shifting masks: phase determination and impact of quartz defects--theoretical and experimental results

Uwe Griesinger, Wolfgang Dettmann, Mario Hennig, Jan Heumann, Roderick Koehle, Ralf Ludwig, Martin Verbeek, Mardjan Zarrabian

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476982

KEYWORDS: Photomasks, Quartz, Inspection, Semiconducting wafers, Etching, Printing, Phase measurement, Scanning electron microscopy, Phase shifts, Lithography

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Proceedings Article | 14 September 2001 Paper

Application of 3D EMF simulation for development and optimization of alternating phase-shifting masks

Armin Semmler, Leonhard Mader, Annika Elsner, Roderick Koehle, Uwe Griesinger, Christoph Noelscher

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435735

KEYWORDS: Photomasks, Etching, Information operations, Critical dimension metrology, Manufacturing, Phase shifting, Chromium, Phase shifts, Lithography, Optical proximity correction

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Proceedings Article | 14 September 2001 Paper

Alternating phase-shifting mask application: effect of width and geometry of shifters, 3D EMF simulation and experimental verification

Armin Semmler, Annika Elsner, Roderick Koehle, Leonhard Mader, Rainer Pforr, Christoph Noelscher, Christoph Friedrich, Juergen Knobloch, Uwe Griesinger

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435773

KEYWORDS: Photomasks, Phase shifts, Lithography, Phase shifting, Optical lithography, Optical proximity correction, 3D metrology, Resolution enhancement technologies, 3D image processing, Diffraction

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Proceedings Article | 9 April 2001 Paper

Phase defect inspection of 130-nm node phase-shift masks using a simultaneous transmitted and reflected light pattern inspection algorithm

Larry Zurbrick, David Emery, Maciej Rudzinski, Mark Wihl, Michel Prudhomme, Christian Crell, Uwe Griesinger, Manuel Vorwerk, Mario Hennig

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425092

KEYWORDS: Inspection, Phase shifts, Defect detection, Reticles, Algorithm development, Photomasks, Detection and tracking algorithms, Defect inspection, Contamination, Signal detection

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Proceedings Article | 22 January 2001 Paper

Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification

Uwe Griesinger, Leonhard Mader, Armin Semmler, Wolfgang Dettmann, Christoph Noelscher, Rainer Pforr

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410714

KEYWORDS: Etching, Phase measurement, Photomasks, Phase shifts, Chromium, Calibration, 3D metrology, Quartz, Profiling, Error analysis

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Proceedings Article | 5 July 2000 Paper

Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling

Christoph Friedrich, Leonhard Mader, Andreas Erdmann, Steffen List, Ronald Gordon, Christian Kalus, Uwe Griesinger, Rainer Pforr, Josef Mathuni, Guenther Ruhl, Wilhelm Maurer

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388969

KEYWORDS: Photomasks, Quartz, Etching, Chromium, Phase shifts, Critical dimension metrology, Picosecond phenomena, Finite-difference time-domain method, Semiconducting wafers, Lithography

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Proceedings Article | 3 February 2000 Paper

Defect printability and repair of alternating phase-shift masks

Christoph Friedrich, Martin Verbeek, Leonhard Mader, Christian Crell, Rainer Pforr, Uwe Griesinger

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377104

KEYWORDS: Photomasks, Quartz, Inspection, Etching, Semiconducting wafers, Chromium, Phase shifts, Phase shifting, Ions, Printing

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Proceedings Article | 30 December 1999 Paper

Transmission and phase balancing of alternating phase-shifting masks (5x): theoretical and experimental results

Uwe Griesinger, Rainer Pforr, Juergen Knobloch, Christoph Friedrich

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373332

KEYWORDS: Etching, Photomasks, Phase shifts, Phase shifting, Picosecond phenomena, Printing, Quartz, Phase measurement, Anisotropic etching, Resolution enhancement technologies

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Proceedings Article | 26 July 1999 Paper

Evaluating the potential of alternating phase-shift masks using lithography simulation

Christoph Friedrich, Klaus Ergenzinger, Fritz Gans, Andreas Grassmann, Uwe Griesinger, Juergen Knobloch, Leonhard Mader, Wilhelm Maurer, Rainer Pforr

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354371

KEYWORDS: Photomasks, Lithography, Solids, Phase shifts, Semiconducting wafers, Quartz, Etching, Scanning electron microscopy, Chromium, Deep ultraviolet

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Proceedings Article | 19 June 1995 Paper

Optoelectronic nanostructures: physics and technology

Heinz Schweizer, Uwe Griesinger, Volker Haerle, Frank Adler, Manfred Burkard, Frank Barth, Juergen Hommel, Christiane Kaden, Janos Kovac, Justus Kuhn, Bernd Klepser, Georg Lehr, Freek Prins, Ferdinand Scholz, Manfred Pilkuhn, Josef Straka, Alfred Forchel, Gilbert Smith

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212517

KEYWORDS: Laser damage threshold, Etching, Photomasks, Nanostructures, Semiconductors, Laser resonators, Quantum efficiency, Resonators, Ions, Dry etching

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Nanostructures based on III-V semiconductor materials have reached a status which enables basic physical studies on size effects in device and in nanostructures. The expected benefits of high modulation bandwidth, low laser threshold, and improved linewidth enhancement factor in DFB lasers, to say only a few, which are believed to be based mainly on the changed density of states (DOS) function in low dimensions might be counterbalanced by altered carrier energy relaxation and k-space filling in those structures. To investigate systematically size effects and device aspects, a continuous change of structure and active device size is needed from 2D to 0D dimensions. This requirement can be met by high resolution electron beam lithography in conjunction with low damage etch processes and epitaxial overgrowth. In this presentation we discuss the technology and design considerations of lasers with low dimensional active regions as well as DOS effects and device relevant carrier relaxation effects. The technology part will focus especially on low damage etch processes such as RIE- ECR. Nearly damage free structuring processes can be demonstrated. Based on this low damage dry etch process we obtained electrically pumped wire DFB lasers with relatively high output power (up to 6 mW) and operation temperature (60 degrees C). Time resolved optical ps-spectroscopy as well as high excitation spectroscopy on wire and dot nanostructures demonstrate strongly changed k-space filling and carrier relaxation mechanisms in low dimensions and represent a serious limitation of device speed. Results obtained from electrically pumped wire DFB lasers confirm the carrier relaxation and k-space filling effects in device structures which have been observed by optical pump experiments in nanostructures. Despite the band filling effects in low dimensional structures, the wire DFB lasers show clearly the expected feature of gain coupling and enhanced differential gain which might demonstrate the applicability of mesoscopic laser devices in common data communication approaches.

Showing 5 of 12 publications

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