PROCEEDINGS VOLUME 1261
MICROLITHOGRAPHY '90 | 4-8 MARCH 1990
Integrated Circuit Metrology, Inspection, and Process Control IV
MICROLITHOGRAPHY '90
4-8 March 1990
San Jose, CA, United States
Sem Metrology
Proc. SPIE 1261, Edge-roughness determination and its contribution to CD measurement error in a scanning electron microscope, 0000 (1 June 1990); doi: 10.1117/12.20027
Proc. SPIE 1261, Certain linewidth measurements, 0000 (1 June 1990); doi: 10.1117/12.20028
Proc. SPIE 1261, Use of scanning thickness mapping technique to perform precision measurements of thin film thickness, 0000 (1 June 1990); doi: 10.1117/12.20029
Electrical Metrology
Proc. SPIE 1261, Defect generation in dry-develop lithography: assessment through electrical characterization, 0000 (1 June 1990); doi: 10.1117/12.20030
Proc. SPIE 1261, Figure of merit for comparison of misalignment test structures, 0000 (1 June 1990); doi: 10.1117/12.20031
Proc. SPIE 1261, Comparison of metrology methods for measurement of micron and submicron resist and polysilicon features, 0000 (1 June 1990); doi: 10.1117/12.20032
Proc. SPIE 1261, Reducing CD variation via statistically matching steppers, 0000 (1 June 1990); doi: 10.1117/12.20033
Optical Microscopy
Proc. SPIE 1261, Object contrast in the confocal microscope and applications to lithographic metrology, 0000 (1 June 1990); doi: 10.1117/12.20034
Proc. SPIE 1261, Large-bandwidth deep-UV microscopy for CD metrology, 0000 (1 June 1990); doi: 10.1117/12.20036
Proc. SPIE 1261, Three-dimensional image visualization using the real-time confocal scanning optical microscope, 0000 (1 June 1990); doi: 10.1117/12.20037
Optical Metrology
Proc. SPIE 1261, Advances in optical metrology for the 1990s, 0000 (1 June 1990); doi: 10.1117/12.20038
Proc. SPIE 1261, Practical photomask linewidth measurements, 0000 (1 June 1990); doi: 10.1117/12.20039
Proc. SPIE 1261, Overlay and linewidth metrology on latent images, 0000 (1 June 1990); doi: 10.1117/12.20040
Proc. SPIE 1261, Nonlinear adaptive edge-detection techniques for wafer inspection and alignment, 0000 (1 June 1990); doi: 10.1117/12.20041
Proc. SPIE 1261, Accuracy of overlay measurements: tool and mark asymmetry effects, 0000 (1 June 1990); doi: 10.1117/12.20042
Automatic Defect Inspection: Instruments
Proc. SPIE 1261, Quantitative measures for surface texture description in semiconductor wafer inspection, 0000 (1 June 1990); doi: 10.1117/12.20043
Proc. SPIE 1261, Automatic classification of defects in semiconductor devices, 0000 (1 June 1990); doi: 10.1117/12.20044
Proc. SPIE 1261, Characterization of a new inspection system, 0000 (1 June 1990); doi: 10.1117/12.20045
Proc. SPIE 1261, Advanced 5x reticle inspection technologies for ULSI devices, 0000 (1 June 1990); doi: 10.1117/12.20046
Automatic Inspection: Practice
Proc. SPIE 1261, Automated inspection as part of a defect reduction program in an ASIC manufacturing environment, 0000 (1 June 1990); doi: 10.1117/12.20047
Proc. SPIE 1261, Yield improvement of submicron devices using defect source analysis on AI interconnections, 0000 (1 June 1990); doi: 10.1117/12.20048
Proc. SPIE 1261, Impact of reticle defects on submicron 5x lithography, 0000 (1 June 1990); doi: 10.1117/12.20049
Special Topics in Metrology and Process Control
Proc. SPIE 1261, Data point selection for site qualification of wafers for ULSI lithography, 0000 (1 June 1990); doi: 10.1117/12.20051
Proc. SPIE 1261, Measuring refractive indices of films on semiconductors by microreflectometry, 0000 (1 June 1990); doi: 10.1117/12.20052
Proc. SPIE 1261, Photolithography diagnostic expert systems: a systematic approach to problem solving in a wafer fabrication facility, 0000 (1 June 1990); doi: 10.1117/12.20053
Proc. SPIE 1261, Automated lithocell, 0000 (1 June 1990); doi: 10.1117/12.20054
Stepper Metrology
Proc. SPIE 1261, Stepper self-metrology using automated techniques, 0000 (1 June 1990); doi: 10.1117/12.20055
Proc. SPIE 1261, Automatic on-line wafer stepper calibration system, 0000 (1 June 1990); doi: 10.1117/12.20056
Proc. SPIE 1261, Exposure monitor structure, 0000 (1 June 1990); doi: 10.1117/12.20057
Proc. SPIE 1261, New alignment system for submicron stepper, 0000 (1 June 1990); doi: 10.1117/12.20058
Poster Session: Special Topics in Photolithogrphy Process Control
Proc. SPIE 1261, Time dependence of PEB effects, 0000 (1 June 1990); doi: 10.1117/12.20060
Proc. SPIE 1261, Novel method for the prediction of process sensitivity in photolithography, 0000 (1 June 1990); doi: 10.1117/12.20061
Proc. SPIE 1261, Applied use of advanced inspection systems to measure, reduce, and control defect densities, 0000 (1 June 1990); doi: 10.1117/12.20062
Proc. SPIE 1261, Methodology to reduce chronic defect mechanisms in semiconductor processing, 0000 (1 June 1990); doi: 10.1117/12.20064
Proc. SPIE 1261, Development of a test vehicle for defect detection on 4- and 16-Mbit devices, 0000 (1 June 1990); doi: 10.1117/12.20065
Poster Session: Special Topics in Metrology
Proc. SPIE 1261, Low-voltage scanning electron metrology, 0000 (1 June 1990); doi: 10.1117/12.20067
Proc. SPIE 1261, Determination of effective width of resist lines by correlation of develop inspect and final inspect CD measurement data, 0000 (1 June 1990); doi: 10.1117/12.20068
Proc. SPIE 1261, Determination of and compensation for wafer bow and warp in a scanning electron microscope requiring precise feature locating and variable tilt, 0000 (1 June 1990); doi: 10.1117/12.20069
Proc. SPIE 1261, Optical method for the verification of integrated circuit and masking structures, 0000 (1 June 1990); doi: 10.1117/12.20070
Proc. SPIE 1261, Increasing the dimensions of metrology, 0000 (1 June 1990); doi: 10.1117/12.20071
Proc. SPIE 1261, Environmental effects on registration and accuracy data on quartz photomasks utilizing the LMS-2000 laser metrology system, 0000 (1 June 1990); doi: 10.1117/12.20072
Proc. SPIE 1261, Fully automatic measuring system for submicron lithography, 0000 (1 June 1990); doi: 10.1117/12.20073
Proc. SPIE 1261, Analysis of film reflectivity and its impact on photolithographic processing, 0000 (1 June 1990); doi: 10.1117/12.20074
Poster Session: Special Topics in Photolithogrphy Process Control
Proc. SPIE 1261, On-line state and model parameter identification of the positive optical photoresist development process, 0000 (1 June 1990); doi: 10.1117/12.20075
Poster Session: Special Topics in Metrology
Proc. SPIE 1261, Ultraviolet-visible microspectrophotometer system for small-spot measurement and characterization of thin films, 0000 (1 June 1990); doi: 10.1117/12.20076
Sem Metrology
Proc. SPIE 1261, Quantitative linewidth measurement using in-situ differential SEM techniques, 0000 (1 June 1990); doi: 10.1117/12.20077
Automatic Inspection: Practice
Proc. SPIE 1261, Laser-ablated resist via inspection, 0000 (1 June 1990); doi: 10.1117/12.20078
Poster Session: Special Topics in Metrology
Proc. SPIE 1261, Simple technique for linewidth measurement of gratings on photomasks, 0000 (1 June 1990); doi: 10.1117/12.20079
Proc. SPIE 1261, Technique for the determination of best focus for ultratech 1X steppers in a production environment using aerial image analysis, 0000 (1 June 1990); doi: 10.1117/12.20080
Poster Session: Special Topics in Photolithogrphy Process Control
Proc. SPIE 1261, Electrical measurements of overlay using the Prometrix Lithomap LM20, 0000 (1 June 1990); doi: 10.1117/12.20081
Poster Session: Special Topics in Metrology
Proc. SPIE 1261, In-situ develop end point control to eliminate CD variance, 0000 (1 June 1990); doi: 10.1117/12.20082
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