Dr. Dirk Zeidler Profile

Dr. Dirk Zeidler

Senior Principal / Head of Advanced Development at Carl Zeiss MultiSEM GmbH

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Publications (11)

Proceedings Article | 26 March 2019 Paper

First demonstration of a 331-beam SEM

C. Riedesel, I. Müller, N. Kaufmann, A. Adolf, N. Kämmer, H. Fritz, A. L. Eberle, D. Zeidler

Proceedings Volume 10959, 1095931 (2019) https://doi.org/10.1117/12.2528795

KEYWORDS: Scanning electron microscopy, Sensors, Electron beams, Electron microscopes, Semiconductors, Electron microscopy

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Proceedings Article | 28 March 2017 Presentation + Paper

High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node

J. T. Neumann, T. Garbowski, W. Högele, T. Korb, S. Halder, P. Leray, R. Garreis, M. le Maire, D. Zeidler

Proceedings Volume 10145, 101451S (2017) https://doi.org/10.1117/12.2257980

KEYWORDS: Scanning electron microscopy, Inspection, Lithography, Defect inspection, Semiconductors, Electron beam lithography, Electron microscopes, Sensors, Optical lithography, Critical dimension metrology, Image quality, Imaging systems

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Proceedings Article | 8 March 2016 Paper

Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples

Tomasz Garbowski, Friedhelm Panteleit, Gregor Dellemann, Manuela Gutsch, Christoph Hohle, Elke Reich, Matthias Rudolph, Katja Steidel, Xaver Thrun, Dirk Zeidler

Proceedings Volume 9778, 97781V (2016) https://doi.org/10.1117/12.2225501

KEYWORDS: Electrons, Defect inspection, Semiconducting wafers, Scanning electron microscopy, Inspection, Wafer inspection, Semiconductors, Electron beams, Metals, Tin, Electron beam lithography, Image processing, Sensors

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Proceedings Article | 4 September 2015 Paper

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Vibhu Jindal, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9661, 96610O (2015) https://doi.org/10.1117/12.2196120

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect inspection, Extreme ultraviolet, Imaging systems, Wafer inspection, Optical inspection, Wafer-level optics, Optics manufacturing

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The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow’s requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection.

To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today’s patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.

Proceedings Article | 9 July 2015 Paper

Multi-beam SEM technology for ultra-high throughput

Thomas Kemen, Tomasz Garbowski, Dirk Zeidler

Proceedings Volume 9658, 965807 (2015) https://doi.org/10.1117/12.2195705

KEYWORDS: Scanning electron microscopy, Electron beams, Photomasks, Extreme ultraviolet, Inspection, Defect inspection, Semiconducting wafers, Sensors, Image acquisition, Image resolution

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Proceedings Article | 19 March 2015 Paper

Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9423, 942319 (2015) https://doi.org/10.1117/12.2175535

KEYWORDS: Inspection, Defect inspection, Photomasks, Semiconducting wafers, Optical inspection, Wafer inspection, Extreme ultraviolet, Manufacturing, Prototyping, Optics manufacturing

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Proceedings Article | 19 March 2015 Paper

Further advancing the throughput of a multi-beam SEM

Thomas Kemen, Matt Malloy, Brad Thiel, Shawn Mikula, Winfried Denk, Gregor Dellemann, Dirk Zeidler

Proceedings Volume 9424, 94241U (2015) https://doi.org/10.1117/12.2188560

KEYWORDS: Scanning electron microscopy, Sensors, Electron beams, Signal to noise ratio, Image resolution, Semiconductors, Beam splitters, Brain, Image processing, Microscopy

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Proceedings Article | 16 September 2014 Paper

High throughput data acquisition with a multi-beam SEM

Anna Lena Keller, Dirk Zeidler, Thomas Kemen

Proceedings Volume 9236, 92360B (2014) https://doi.org/10.1117/12.2069119

KEYWORDS: Scanning electron microscopy, Electron beams, Sensors, Data acquisition, Image resolution, Beam splitters, Electron microscopes, Brain, Tissues, Silicon

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Proceedings Article | 22 May 2006 Paper

Tomographic imaging of molecular orbitals using high harmonic generation

J. Itatani, J. Levesque, D. Zeidler, P. Corkum, D. Villeneuve

Proceedings Volume 6256, 62560L (2006) https://doi.org/10.1117/12.682373

KEYWORDS: Molecules, Polarization, High harmonic generation, Tomography, Molecular lasers, Argon, Ionization, Pulsed laser operation, Chemical species, Interferometers

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Proceedings Article | 22 September 2005 Paper

Tomographic imaging of electron orbital using high-harmonic generation

J. Itatani, J. Levesque, D. Zeidler, P. B. Corkum, D. M. Villeneuve

Proceedings Volume 5920, 59200F (2005) https://doi.org/10.1117/12.624095

KEYWORDS: Molecules, Polarization, Molecular lasers, Ionization, High harmonic generation, Tomography, Extreme ultraviolet, Phase measurement, Argon, Photons

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Proceedings Article | 16 November 2004 Paper

Fully differential rates for femtosecond multiphoton double ionization of neon

Dirk Zeidler, M. Weckenbrock, A. Staudte, Th. Weber, M. Schöffler, M. Meckel, S. Kammer, M. Smolarski, Ottmar Jagutzki, V. Bhardwaj, David Rayner, David Villeneuve, Paul Corkum, Reinhard Dörner

Proceedings Volume 5579, (2004) https://doi.org/10.1117/12.567432

KEYWORDS: Electrons, Ionization, Ions, Polarization, Neon, Femtosecond phenomena, Chemical species, Laser applications, Laser damage threshold, Single photon

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Showing 5 of 11 publications

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