Dr. Jens Timo Neumann Profile

Dr. Jens Timo Neumann

Head of Prod. Syst. Engin. Imaging & Illumination at Carl Zeiss SMT GmbH

SPIE Involvement:

Conference Program Committee | Author

Publications (33)

Proceedings Article | 21 November 2023 Paper

Status and outlook of EUV optics at ZEISS

Jörg Zimmermann, Jens Timo Neumann, Dirk Jürgens, Paul Gräupner

Proceedings Volume 12750, 127500O (2023) https://doi.org/10.1117/12.2687658

KEYWORDS: Optics manufacturing, EUV optics, Scanners, Optical resolution, Imaging systems, High volume manufacturing, Projection systems, Mirrors, Metrology, Manufacturing

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SPIE Journal Paper | 1 March 2023

Defect detection and classification on imec iN5 node BEoL test vehicle with multibeam scanning electron microscope

Jens Timo Neumann, Abhilash Srikantha, Philipp Hüthwohl, Keumsil Lee, James William B., Thomas Korb, Eugen Foca, Tomasz Garbowski, Daniel Boecker, Sayantan Das, Sandip Halder

JM3, Vol. 22, Issue 02, 021009, (March 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.2.021009

KEYWORDS: Defect detection, Education and training, Back end of line, Image restoration, Image classification, Data modeling, Scanning electron microscopy, Process modeling, Machine learning, Electron microscopes

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Proceedings Article | 26 May 2022 Presentation + Paper

Defect detection and classification on imec iN5 node BEoL test vehicle with MultiSEM

Jens Timo Neumann, Abhilash Srikantha, Philipp Hüthwohl, Keumsil Lee, James William B., Thomas Korb, Eugen Foca, Tomasz Garbowski, Daniel Boecker, Sayantan Das, Sandip Halder

Proceedings Volume 12053, 120530I (2022) https://doi.org/10.1117/12.2619766

KEYWORDS: Defect detection, Image classification, Data modeling, Bridges, Back end of line, Visualization, Sensors, Inspection, Semiconductors

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Proceedings Article | 20 March 2020 Presentation + Paper

3D analysis of high-aspect ratio features in 3D-NAND

Jens Timo Neumann, Dmitry Klochkov, Thomas Korb, Sheetal Gupta, Amir Avishai, Ramani Pichumani, Keumsil Lee, Alex Buxbaum, Eugen Foca

Proceedings Volume 11325, 113250M (2020) https://doi.org/10.1117/12.2552006

KEYWORDS: Statistical analysis, Scanning electron microscopy, Semiconducting wafers, Logic, Data acquisition, Tomography, Shape analysis, Metrology

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Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography: The next step in EUV imaging (Conference Presentation)

Eelco van Setten, John McNamara, Jan van Schoot, Gerardo Bottiglieri, Kars Troost, Timon Fliervoet, Stephen Hsu, Jörg Zimmermann, Jens-Timo Neumann, Matthias Rösch, Paul Graeupner

Proceedings Volume 10809, 1080910 (2018) https://doi.org/10.1117/12.2502149

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Fiber optic illuminators, Transistors, Photomasks, Mirrors, Image resolution

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Proceedings Article | 30 October 2017 Presentation + Paper

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Eelco van Setten, Gerardo Bottiglieri, Laurens de Winter, John McNamara, Paul Rusu, Jan Lubkoll, Gijsbert Rispens, Jan van Schoot, Jens Timo Neumann, Matthias Roesch, Bernhard Kneer

Proceedings Volume 10450, 104500W (2017) https://doi.org/10.1117/12.2280624

KEYWORDS: Extreme ultraviolet lithography, Nanoimprint lithography, Photomasks, Extreme ultraviolet, Reflectivity, Scanners, Mirrors, Semiconducting wafers, Reticles, Imaging systems

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To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore’s law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to ~ +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

SPIE Journal Paper | 30 October 2017

High-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond

Jan van Schoot, Eelco van Setten, Gijsbert Rispens, Kars Troost, Bernhard Kneer, Sascha Migura, Jens Timo Neumann, Winfried Kaiser

JM3, Vol. 16, Issue 04, 041010, (October 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041010

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Mirrors, Nanoimprint lithography, Projection systems, Wafer-level optics

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Proceedings Article | 16 October 2017 Presentation + Paper

High-NA EUV lithography enabling Moore’s law in the next decade

Jan van Schoot, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Bernhard Kneer, Peter Kuerz, Winfried Kaiser, Tilmann Heil, Sascha Migura, Jens Timo Neumann

Proceedings Volume 10450, 104500U (2017) https://doi.org/10.1117/12.2280592

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Mirrors, Reticles, Projection systems, Optical design, Imaging systems, Extreme ultraviolet

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Proceedings Article | 28 March 2017 Presentation + Paper

High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node

J. T. Neumann, T. Garbowski, W. Högele, T. Korb, S. Halder, P. Leray, R. Garreis, M. le Maire, D. Zeidler

Proceedings Volume 10145, 101451S (2017) https://doi.org/10.1117/12.2257980

KEYWORDS: Scanning electron microscopy, Inspection, Lithography, Defect inspection, Semiconductors, Electron beam lithography, Electron microscopes, Sensors, Optical lithography, Critical dimension metrology, Image quality, Imaging systems

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Proceedings Article | 18 March 2016 Paper

EUV high-NA scanner and mask optimization for sub-8nm resolution

Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser

Proceedings Volume 9776, 97761I (2016) https://doi.org/10.1117/12.2220150

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Reticles, Scanners, Semiconducting wafers, Source mask optimization, Wafer-level optics, Lithography, Imaging systems, Extreme ultraviolet, Neodymium, Ions

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SPIE Journal Paper | 1 March 2016

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Graeupner

JM3, Vol. 15, Issue 02, 021205, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021205

KEYWORDS: Photomasks, Deep ultraviolet, Extreme ultraviolet, Diffraction, Extreme ultraviolet lithography, Refractive index, Lithography, Polarization, Chromium, Monochromatic aberrations

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Proceedings Article | 16 November 2015 Paper

EUV High-NA scanner and mask optimization for sub 8 nm resolution

Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser

Proceedings Volume 9635, 963503 (2015) https://doi.org/10.1117/12.2202258

KEYWORDS: Extreme ultraviolet lithography, Scanners, Photomasks, Reticles, Image resolution, Lithography, Wafer-level optics, Semiconducting wafers, Source mask optimization, EUV optics, Imaging systems, Nanoimprint lithography, Ions, Neodymium

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Proceedings Article | 23 October 2015 Paper

Experimental validation of novel mask technology to reduce mask 3D effects

Lieve Van Look, Vicky Philipsen, Eric Hendrickx, Natalia Davydova, Friso Wittebrood, Robert de Kruif, Anton van Oosten, Junji Miyazaki, Timon Fliervoet, Jan van Schoot, Jens Timo Neumann

Proceedings Volume 9635, 96350Z (2015) https://doi.org/10.1117/12.2203124

KEYWORDS: Photomasks, Semiconducting wafers, Mirrors, Printing, Diffraction, Extreme ultraviolet, Prototyping, Nanoimprint lithography, 3D image processing, Inspection

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Proceedings Article | 4 September 2015 Paper

Imaging performance of the EUV high NA anamorphic system

Koen van Ingen Schenau, Gerardo Bottiglieri, Jan van Schoot, Jens-Timo Neumann, Matthias Roesch

Proceedings Volume 9661, 96610S (2015) https://doi.org/10.1117/12.2195476

KEYWORDS: Photomasks, Imaging systems, Extreme ultraviolet, Nanoimprint lithography, Reticles, Semiconducting wafers, Electroluminescence, Ions, Nickel, Logic

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Proceedings Article | 4 September 2015 Paper

Experimental validation of novel EUV mask technology to reduce mask 3D effects

Lieve Van Look, Vicky Philipsen, Eric Hendrickx, Natalia Davydova, Friso Wittebrood, Robert de Kruif, Anton van Oosten, Junji Miyazaki, Timon Fliervoet, Jan van Schoot, Jens Timo Neumann

Proceedings Volume 9661, 966109 (2015) https://doi.org/10.1117/12.2195329

KEYWORDS: Photomasks, Semiconducting wafers, Mirrors, Printing, Extreme ultraviolet, Diffraction, Prototyping, Nanoimprint lithography, Inspection, 3D image processing

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Proceedings Article | 4 September 2015 Paper

Anamorphic high-NA EUV lithography optics

Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser, Jan van Schoot

Proceedings Volume 9661, 96610T (2015) https://doi.org/10.1117/12.2196393

KEYWORDS: Photomasks, Reticles, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Mirrors, Lithography, EUV optics, Wafer-level optics, Lithographic illumination

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Proceedings Article | 9 July 2015 Paper

Alternative EUV mask technology to compensate for mask 3D effects

Lieve Van Look, Vicky Philipsen, Eric Hendrickx, Geert Vandenberghe, Natalia Davydova, Friso Wittebrood, Robert de Kruif, Anton van Oosten, Junji Miyazaki, Timon Fliervoet, Jan van Schoot, Jens Timo Neumann

Proceedings Volume 9658, 96580I (2015) https://doi.org/10.1117/12.2197213

KEYWORDS: Photomasks, Semiconducting wafers, Mirrors, Printing, Extreme ultraviolet, Diffraction, Prototyping, Nanoimprint lithography, 3D image processing, Reflectivity

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Proceedings Article | 18 March 2015 Paper

Mask-induced best-focus-shifts in DUV and EUV lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Gräupner

Proceedings Volume 9426, 94260H (2015) https://doi.org/10.1117/12.2086346

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Refractive index, Extreme ultraviolet lithography, Polarization, Electroluminescent displays, Lithography, Optical proximity correction, Monochromatic aberrations

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Proceedings Article | 16 March 2015 Paper

Imaging performance of EUV lithography optics configuration for sub-9nm resolution

Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura, Bernhard Kneer, Winfried Kaiser, Koen van Ingen Schenau

Proceedings Volume 9422, 94221H (2015) https://doi.org/10.1117/12.2175658

KEYWORDS: Reticles, Imaging systems, Semiconducting wafers, Photomasks, Diffraction, Lithography, Extreme ultraviolet lithography, Image resolution, Source mask optimization, EUV optics

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Proceedings Article | 16 March 2015 Paper

EUV lithography optics for sub-9nm resolution

Bernhard Kneer, Sascha Migura, Winfried Kaiser, Jens Timo Neumann, Jan van Schoot

Proceedings Volume 9422, 94221G (2015) https://doi.org/10.1117/12.2175488

KEYWORDS: Reticles, Photomasks, Projection systems, Extreme ultraviolet lithography, Diffraction, Semiconducting wafers, Mirrors, EUV optics, Extreme ultraviolet, Lithography

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Proceedings Article | 1 October 2013 Paper

Actinic characterization and modeling of the EUV mask stack

Vicky Philipsen, Eric Hendrickx, Rik Jonckheere, Natalia Davydova, Timon Fliervoet, Jens Timo Neumann

Proceedings Volume 8886, 88860B (2013) https://doi.org/10.1117/12.2030663

KEYWORDS: Photomasks, Reflectivity, Diffraction, 3D modeling, Extreme ultraviolet, Silicon, Reflectometry, Calibration, Molybdenum, Semiconducting wafers

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Proceedings Article | 1 April 2013 Paper

Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, Paul Gräupner

Proceedings Volume 8679, 86791Q (2013) https://doi.org/10.1117/12.2011432

KEYWORDS: Photomasks, Image quality standards, Nanoimprint lithography, Lithography, Molybdenum, Binary data, Optical proximity correction, Extreme ultraviolet, Silicon, Multilayers

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Proceedings Article | 1 April 2013 Paper

Experimental verification of EUV mask limitations at high numerical apertures

Rikon Chao, Paul Graeupner, Eric Gullikson, Seong-Sue Kim, Jens-Timo Neumann, Ryan Miyakawa, Hwan-Seok Seo, Andy Neureuther, Patrick Naulleau

Proceedings Volume 8679, 86791M (2013) https://doi.org/10.1117/12.2013209

KEYWORDS: Data modeling, Reflectivity, Diffraction, Photomasks, Scatter measurement, Calibration, Extreme ultraviolet, Molybdenum, Silicon, Ruthenium

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Proceedings Article | 1 April 2013 Paper

Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio

Jens Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, Bernd Geh

Proceedings Volume 8679, 867915 (2013) https://doi.org/10.1117/12.2011455

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Diffraction, Reflectivity, Extreme ultraviolet, Image quality, Image quality standards, Binary data, Projection systems

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Proceedings Article | 8 November 2012 Paper

Interactions of 3D mask effects and NA in EUV lithography

Jens Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, Bernd Geh

Proceedings Volume 8522, 852211 (2012) https://doi.org/10.1117/12.2009117

KEYWORDS: Photomasks, Reticles, Reflectivity, Image quality, Semiconducting wafers, Extreme ultraviolet lithography, Diffraction, Nanoimprint lithography, Projection systems, Extreme ultraviolet

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Proceedings Article | 13 March 2012 Paper

Overlay metrology for low-k1: challenges and solutions

Jens Neumann, Jongsu Lee, Kiho Yang, Byounghoon Lee, Taehyeong Lee, Jeongsu Park, Chang-moon Lim, Donggyu Yim, Sungki Park, Eric Janda, Kaustuve Bhattacharyya, Chan-ho Ryu, Young-Hong Min, Kiki Rhe, Bernd Geh

Proceedings Volume 8326, 832602 (2012) https://doi.org/10.1117/12.916376

KEYWORDS: Overlay metrology, Diffraction, Data modeling, Metrology, Diffraction gratings, Lithography, Semiconducting wafers, Inspection, Printing, Computer simulations

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Proceedings Article | 23 March 2011 Paper

Scanner matching for standard and freeform illumination shapes using FlexRay

J. Bekaert, L. Van Look, K. D'havé, B. Laenens, G. Vandenberghe, P. van Adrichem, W. Shao, J. Ghan, K. Schreel, J. T. Neumann

Proceedings Volume 7973, 79731I (2011) https://doi.org/10.1117/12.881607

KEYWORDS: Scanners, Fiber optic illuminators, Semiconducting wafers, Photomasks, Reticles, Diffractive optical elements, Cadmium, Critical dimension metrology, Manufacturing, Optical lithography

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Proceedings Article | 23 March 2011 Paper

Characterization and control of dynamic lens heating effects under high volume manufacturing conditions

J. Bekaert, L. Van Look, G. Vandenberghe, P. van Adrichem, M. Maslow, J.-W. Gemmink, H. Cao, S. Hunsche, J. T. Neumann, A. Wolf

Proceedings Volume 7973, 79730V (2011) https://doi.org/10.1117/12.881609

KEYWORDS: Calibration, Semiconducting wafers, Scanners, Reticles, Monochromatic aberrations, Photomasks, HVAC controls, Manufacturing, Diffraction, Wavefronts

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SPIE Journal Paper | 1 January 2011

Experimental verification of source-mask optimization and freeform illumination for 22-nm node static random access memory cells

Joost Bekaert, Bart Laenens, Staf Verhaegen, Lieve Van Look, Darko Trivkovic, Frederic Lazzarino, Geert Vandenberghe, Paul van Adrichem, Robert Socha, Stephen Hsu, Hua-yu Liu, Orion Mouraille, Koen Schreel, Mircea Dusa, Jörg Zimmermann, Paul Gräupner, Jens Neumann

JM3, Vol. 10, Issue 1, 013008, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541778

KEYWORDS: Source mask optimization, Photomasks, Diffractive optical elements, Semiconducting wafers, Scanners, Manufacturing, Double patterning technology, Fiber optic illuminators, Optical lithography, Lithographic illumination

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Proceedings Article | 4 March 2010 Paper

Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners

Jörg Zimmermann, Paul Gräupner, Jens Neumann, Dirk Hellweg, Dirk Jürgens, Michael Patra, Christoph Hennerkes, Manfred Maul, Bernd Geh, Andre Engelen, Oscar Noordman, Melchior Mulder, Sean Park, Joep De Vocht

Proceedings Volume 7640, 764005 (2010) https://doi.org/10.1117/12.847282

KEYWORDS: Diffractive optical elements, Fiber optic illuminators, Reticles, Lithographic illumination, Mirrors, Critical dimension metrology, Distortion, Source mask optimization, Manufacturing, Semiconducting wafers

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Proceedings Article | 4 March 2010 Paper

Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells

J. Bekaert, B. Laenens, S. Verhaegen, L. Van Look, D. Trivkovic, F. Lazzarino, G. Vandenberghe, P. van Adrichem, R. Socha, S. Baron, M. C. Tsai, K. Ning, S. Hsu, H. Y. Liu, M. Mulder, A. Bouma, E. van der Heijden, O. Mouraille, K. Schreel, J. Finders, M. Dusa, J. Zimmermann, P. Gräupner, J. T. Neumann, C. Hennerkes

Proceedings Volume 7640, 764008 (2010) https://doi.org/10.1117/12.846918

KEYWORDS: Source mask optimization, Photomasks, Semiconducting wafers, Diffractive optical elements, Manufacturing, Double patterning technology, Scanners, Electroluminescence, Fiber optic illuminators, Optical lithography

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Proceedings Article | 4 December 2008 Paper

Orientation Zernike Polynomials: a systematic description of polarized imaging using high NA lithography lenses

Tilmann Heil, Johannes Ruoff, Jens Timo Neumann, Michael Totzeck, Daniel Krähmer, Bernd Geh, Paul Gräupner

Proceedings Volume 7140, 714018 (2008) https://doi.org/10.1117/12.805438

KEYWORDS: Polarization, Wavefronts, Apodization, Zernike polynomials, Lithography, Critical dimension metrology, Imaging systems, Lithographic lenses, Diffraction, Process control

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Proceedings Article | 30 October 2007 Paper

Polarization-induced astigmatism caused by topographic masks

Johannes Ruoff, Jens Timo Neumann, Emil Schmitt-Weaver, Eelco van Setten, Nicolas le Masson, Chris Progler, Bernd Geh

Proceedings Volume 6730, 67301T (2007) https://doi.org/10.1117/12.747039

KEYWORDS: Diffraction, Polarization, Photomasks, Monochromatic aberrations, Binary data, Birefringence, Electromagnetism, Chromium, Commercial off the shelf technology, Reticles

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Showing 5 of 33 publications

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