Dr. Nuriel Amir
Marketing Director at KLA-Tencor Israel
SPIE Involvement:
Author | Instructor
Publications (12)

PROCEEDINGS ARTICLE | March 16, 2016
Proc. SPIE. 9781, Design-Process-Technology Co-optimization for Manufacturability X
KEYWORDS: Target detection, Etching, Control systems, Time metrology, Process control, Semiconductor manufacturing, Critical dimension metrology, Semiconducting wafers, Overlay metrology, Imaging metrology

PROCEEDINGS ARTICLE | March 24, 2015
Proc. SPIE. 9424, Metrology, Inspection, and Process Control for Microlithography XXIX
KEYWORDS: Metrology, Optical lithography, Etching, Image segmentation, Silicon, Distortion, Photomasks, Semiconducting wafers, Overlay metrology, Standards development

PROCEEDINGS ARTICLE | March 19, 2015
Proc. SPIE. 9424, Metrology, Inspection, and Process Control for Microlithography XXIX
KEYWORDS: Lithography, Metrology, Quality measurement, Scatterometry, Uncertainty analysis, Signal processing, Process control, Photomasks, Double patterning technology, Overlay metrology

PROCEEDINGS ARTICLE | March 19, 2015
Proc. SPIE. 9424, Metrology, Inspection, and Process Control for Microlithography XXIX
KEYWORDS: Metrology, Optical lithography, Scatterometry, Signal processing, Photomasks, Semiconducting wafers, Scatter measurement, Overlay metrology, Back end of line, Front end of line

SPIE Journal Paper | December 2, 2014
JM3 Vol. 13 Issue 04
KEYWORDS: Metrology, Overlay metrology, Calibration, Optical filters, Etching, Semiconducting wafers, Detection and tracking algorithms, Polishing, Chemical vapor deposition, Chemical mechanical planarization

SPIE Journal Paper | October 6, 2014
JM3 Vol. 13 Issue 04
KEYWORDS: Metrology, Overlay metrology, Calibration, Optical testing, Etching, Inspection, Scanning electron microscopy, Imaging metrology, Electron microscopes, Measurement devices

Showing 5 of 12 publications
Course Instructor
SC1158: Metrology of Image Placement
This course explains basic principles of metrology of image placement for applications to registration, alignment, and overlay in IC manufacture. Starting with IC Design Rules and definitions of device pattern critical dimension and centerline as their basis, this course outlines a systematic approach to dimensional metrology. Device pattern variation in mask-making, lithography imaging, image recoding, and transfer, and down-stream wafer processing, are discussed leading to requirements of dimension metrology and control. Expectations in metrology of image placement are examined in the context of semiconductor design and manufacturing paradigm: device invariance in transformations of symmetry and translation, universal coordinate system, and absolute scale being the foundation of IC design. These attributes, built into IC design are supported in production by the use of isoplanatic lithography systems, dimensionally stable masks, stages, and wafers, control of the long distance scale and, of course, spatially uniform semiconductor processing. Metrology performance metrics are defined and illustrated in applications to improving robustness and accuracy in production environment. Systematic quantitative validation of expectations for metrology systems and targets being measured, with complementary validation means and measurement technology, lay the foundation for certifiably accurate metrology of image placement and comprehensive control of overlay in IC manufacture.
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