Dr. R. Scott Mackay Profile

Dr. R. Scott Mackay

Consultant at Petersen Advanced Lithography Inc

SPIE Involvement:

Conference Program Committee | Conference Chair | Conference Co-Chair | Author

Publications (17)

PROCEEDINGS ARTICLE | May 19, 2006

Mask repair technique assessment and development for the 45nm lithographic node

Proc. SPIE. 6283, Photomask and Next-Generation Lithography Mask Technology XIII

KEYWORDS: Signal to noise ratio, Lithography, Electron beams, Etching, Molecules, Ions, Image resolution, Scanning electron microscopy, Ion beams, Photomasks

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PROCEEDINGS ARTICLE | November 9, 2005

An integrated approach to the analysis of imprint vs. optical lithography, or why this is not just a mask discussion

Proc. SPIE. 5992, 25th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Semiconductors, Lithography, Reticles, Optical lithography, Etching, Manufacturing, Inspection, Photomasks, Nanoimprint lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | November 7, 2005

Mask lithography assessment for 45 nm node technology

Proc. SPIE. 5992, 25th Annual BACUS Symposium on Photomask Technology

KEYWORDS: Semiconductors, Lithography, Electron beam lithography, Metrology, Metals, Error analysis, Composites, Manufacturing, Photomasks, Vestigial sideband modulation

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PROCEEDINGS ARTICLE | August 18, 2005

Current imprint template commercial manufacturing capability for nanotechnology and existing semiconductor and MEMS markets

Proc. SPIE. 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II

KEYWORDS: Microelectromechanical systems, Semiconductors, Nanotechnology, Lithography, Reticles, Optical lithography, Etching, Manufacturing, Photomasks, Optics manufacturing

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SPIE Conference Volume | May 6, 2005

Emerging Lithographic Technologies IX

PROCEEDINGS ARTICLE | May 5, 2005

Device and lithography contextual mask rule generation

Proc. SPIE. 5756, Design and Process Integration for Microelectronic Manufacturing III

KEYWORDS: Lithography, Electron beam lithography, Manufacturing, Design for manufacturing, Photomasks, Optical proximity correction, Mask making, Critical dimension metrology, Semiconducting wafers, Resolution enhancement technologies

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PROCEEDINGS ARTICLE | January 27, 2005

Photomask development for 90-nm technology

Proc. SPIE. 5645, Advanced Microlithography Technologies

KEYWORDS: Semiconductors, Lithography, Etching, Quartz, Manufacturing, Chromium, Photomasks, SRAF, Binary data, Phase shifts

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SPIE Conference Volume | May 20, 2004

Emerging Lithographic Technologies VIII

SPIE Conference Volume | June 16, 2003

Emerging Lithographic Technologies VII

PROCEEDINGS ARTICLE | June 16, 2003

Reduction of image placement errors in EPL masks

Proc. SPIE. 5037, Emerging Lithographic Technologies VII

KEYWORDS: Lithography, Electron beam lithography, Reticles, Metrology, Silicon, Photomasks, Mask making, Optical alignment, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | May 28, 2003

Through the looking glass: what is on the horizon for the mask maker?

Proc. SPIE. 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents

KEYWORDS: Lithography, Optical lithography, Glasses, Manufacturing, Inspection, Pellicles, Photomasks, Extreme ultraviolet lithography, Mask making, Semiconducting wafers

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SPIE Journal Paper | April 1, 2003

Predicting overlay performance for electron projection lithography masks

Reu, Phillip , Chen, Cheng-Fu , Engelstad, Roxann , Lovell, Edward , Lercel, Michael , Wood, Obert , Mackay, R.

JM3 Vol. 2 Issue 02

KEYWORDS: Photomasks, Mask making, Manufacturing, Electron beam lithography, Performance modeling, Projection lithography, Finite element methods, 3D modeling, Device simulation, Semiconducting wafers

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PROCEEDINGS ARTICLE | July 1, 2002

NGL process and the role of International SEMATECH

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Lithography, X-rays, Manufacturing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optics manufacturing, X-ray technology, EUV optics, Resolution enhancement technologies

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International SEMATECH (ISMT) established a program in 1996 to narrow the Next Generation Lithography (NGL) options on the SIA Roadmap through a global consensus process. Methodologies developed by the SIA Lithography Technical Working Group (TWG) were adopted to ensure a balanced and objective assessment. Critical reviews with emphasis on technical program plans, solutions to critical issues (showstoppers), error budget analysis, cost-of-ownership, business plans, and schedules were implemented with the Technical Champions of each technology. White papers were written by the Technical Champion teams to better educate the participants in the annual worldwide NGL workshops. Participants made their recommendations through a survey conducted at the end of each workshop. A Task Force of the key stakeholders from global chip makers, equipment suppliers and consortia was commissioned to review the workshop output, assess the progress on the critical issues and make recommendations to ISMT on narrowing the options. As a result of this global consensus process and the critical issue projects, the NGL Task Force has made the following recommendations: (i) November 1997 - Massively Parallel Direct Write (MPDW) is not mature enough for introduction until at least the 50nm node. (ii) December 1998 - ISMT should narrow its support to two options EUVL and EPL, and that other worldwide activity on X-Ray and IPL continue. (iii) December 1999 - ISMT should continue its support for EUVL and EPL for the 70nm node, it also recognized the growing possibility that the industry might need more than one mainstream technology for the diverging application of DRAM/MPU and ASIC/SOC. (iv) September 2000 - The industry in general should narrow its support for commercialization to EUVL and EPL for insertion at the 70nm node. (v) August 2001 - The industry should continue to fund the commercialization of both EUVL and EPL. Today, the ISMT program for NGL is transitioning from option selection to promoting critical issues solutions and commercial infrastructure for EUVL with initial focus on mask blanks. ISMT is also pursuing collaboration with the suppliers and consortia developing EPL technology to provide stable stencil mask for contact layers. This paper describes the evolution of the program, results of the year 2001 activities, and the plans for 2002.

PROCEEDINGS ARTICLE | July 1, 2002

Predicting overlay performance for electron projection lithography masks

Proc. SPIE. 4688, Emerging Lithographic Technologies VI

KEYWORDS: Electron beam lithography, Etching, Silicon, Manufacturing, Control systems, Finite element methods, Photomasks, Mask making, Semiconducting wafers, Projection lithography

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PROCEEDINGS ARTICLE | July 5, 2000

Influence of film stress on advanced optical reticle distortions

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Thin films, Reticles, Metrology, Optical lithography, Etching, Chromium, Photomasks, Mask making, Optical alignment, Chemical elements

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PROCEEDINGS ARTICLE | June 5, 1998

Materials for reflective multilayer coatings for EUV wavelengths

Proc. SPIE. 3331, Emerging Lithographic Technologies II

KEYWORDS: Mirrors, Multilayers, Interfaces, Silicon, Optical coatings, Reflectivity, Extreme ultraviolet, Molybdenum, Thin film coatings, Beryllium

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PROCEEDINGS ARTICLE | July 7, 1997

Interferometric lithography exposure tool for 180-nm structures

Proc. SPIE. 3048, Emerging Lithographic Technologies

KEYWORDS: Wafer-level optics, Laser sources, Lithography, Digital signal processing, Optical lithography, Manufacturing, Interferometry, Photoresist materials, Photoresist processing, Semiconducting wafers

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