PROCEEDINGS VOLUME 1262
MICROLITHOGRAPHY '90 | 4-8 MARCH 1990
Advances in Resist Technology and Processing VII
IN THIS VOLUME

0 Sessions, 54 Papers, 0 Presentations
Dry Develop  (8)
MICROLITHOGRAPHY '90
4-8 March 1990
San Jose, CA, United States
Acid Catalyzed Systems
Proc. SPIE 1262, Aqueous base developable novel deep-UV resist for KrF excimer laser lithography, 0000 (1 June 1990); doi: 10.1117/12.20083
Poster Session: Resist Technology
Proc. SPIE 1262, Sensitivity enhancers for chemically amplified resists, 0000 (1 June 1990); doi: 10.1117/12.20084
Acid Catalyzed Systems
Proc. SPIE 1262, Chemical amplification negative resist systems composed of novolac, silanols, and acid generators, 0000 (1 June 1990); doi: 10.1117/12.20085
Poster Session: Resist Technology
Proc. SPIE 1262, Investigation of the exposure and bake of a positive acting resist with chemical amplification, 0000 (1 June 1990); doi: 10.1117/12.20086
Acid Catalyzed Systems
Proc. SPIE 1262, Negative tone aqueous developable resist for photon, electron, and x-ray lithography, 0000 (1 June 1990); doi: 10.1117/12.20087
Proc. SPIE 1262, Systematic investigation of the photoresponse and dissolution characteristics of an acid-hardening resist, 0000 (1 June 1990); doi: 10.1117/12.20088
Proc. SPIE 1262, 1X deep-UV lithography with chemical amplification for 1-micron DRAM production, 0000 (1 June 1990); doi: 10.1117/12.20090
Dry Develop
Proc. SPIE 1262, Silicon diffusion characteristics of different surface-imaging resists, 0000 (1 June 1990); doi: 10.1117/12.20091
Proc. SPIE 1262, Benefits and prospects of aqueous silylation for novel dry developable high-resolution resists, 0000 (1 June 1990); doi: 10.1117/12.20092
Proc. SPIE 1262, Effect of mask erosion on process latitudes in bilayer lithography, 0000 (1 June 1990); doi: 10.1117/12.20093
Proc. SPIE 1262, Highly etch resistant, negative resist for deep-UV and electron beam lithography, 0000 (1 June 1990); doi: 10.1117/12.20094
Poster Session: Resist Technology
Proc. SPIE 1262, Characterization of dry developed processes using silylation application to the PRIME process, 0000 (1 June 1990); doi: 10.1117/12.20095
Dry Develop
Proc. SPIE 1262, Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma, 0000 (1 June 1990); doi: 10.1117/12.20096
Poster Session: Resist Technology
Proc. SPIE 1262, Silylation of poly (t-BOC) styrene resists: performance and mechanisms, 0000 (1 June 1990); doi: 10.1117/12.20097
Dry Develop
Proc. SPIE 1262, Optimization of resist composition for the DESIRE process, 0000 (1 June 1990); doi: 10.1117/12.20098
Diazo Materials
Proc. SPIE 1262, Effect of 2,1,4 DAQ ester chemistry on the behavior of I-line image reversal resists, 0000 (1 June 1990); doi: 10.1117/12.20099
Proc. SPIE 1262, Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography, 0000 (1 June 1990); doi: 10.1117/12.20100
Proc. SPIE 1262, Characteristics of new KrF excimer laser resist, 0000 (1 June 1990); doi: 10.1117/12.20101
Proc. SPIE 1262, Novolac design for high-resolution positive photoresist (III): a selection principle of phenolic compounds for novolac resins, 0000 (1 June 1990); doi: 10.1117/12.20102
Proc. SPIE 1262, Free volume and viscosity effects in polymer layers: application to lithographic processes, 0000 (1 June 1990); doi: 10.1117/12.20103
Proc. SPIE 1262, Studies of the molecular mechanism of dissolution inhibition of positive photoresists based on novolac-DNQ, 0000 (1 June 1990); doi: 10.1117/12.20104
Proc. SPIE 1262, High-resolution positive photoresists: novolac molecular weight and molecular weight distribution effects, 0000 (1 June 1990); doi: 10.1117/12.20105
New Materials
Proc. SPIE 1262, Chemical amplification of resist lines: a novel sub-half-micron bilayer resist tehnique for NUV and deep-UV lithography, 0000 (1 June 1990); doi: 10.1117/12.20106
Proc. SPIE 1262, Image reversal: a new chemical approach using isoureas, 0000 (1 June 1990); doi: 10.1117/12.20107
Proc. SPIE 1262, Germanium-containing resist for bilayer resist process, 0000 (1 June 1990); doi: 10.1117/12.20108
Proc. SPIE 1262, Microlithography using conducting polymers, 0000 (1 June 1990); doi: 10.1117/12.20109
Proc. SPIE 1262, Application of the in-situ dyeing effect for an image reversal resist, 0000 (1 June 1990); doi: 10.1117/12.20110
Poster Session: Resist Technology
Proc. SPIE 1262, Photoresist aerosol particle formation during spin coating, 0000 (1 June 1990); doi: 10.1117/12.20111
Proc. SPIE 1262, Optimization of the absorbance of novolak resin films at 248 nm, 0000 (1 June 1990); doi: 10.1117/12.20112
New Materials
Proc. SPIE 1262, Chemically amplified resists for I-line and G-line applications, 0000 (1 June 1990); doi: 10.1117/12.20113
Poster Session: Resist Technology
Proc. SPIE 1262, Sidewall profile control through processing and dye additives, 0000 (1 June 1990); doi: 10.1117/12.20115
Proc. SPIE 1262, Reduction of lateral swelling and incoporation of DESIRE in MOS processing, 0000 (1 June 1990); doi: 10.1117/12.20116
Proc. SPIE 1262, Characterization of the intermediate development bake as applied to I-line lithography, 0000 (1 June 1990); doi: 10.1117/12.20117
Proc. SPIE 1262, G-line image reversal: capabilities on a 0.54-N.A. stepper, 0000 (1 June 1990); doi: 10.1117/12.20118
Dry Develop
Proc. SPIE 1262, Silylation processes for 193-nm excimer laser lithography, 0000 (1 June 1990); doi: 10.1117/12.20119
Poster Session: Resist Technology
Proc. SPIE 1262, Silylation and dry development of three component resists for half-micron lithography, 0000 (1 June 1990); doi: 10.1117/12.20120
Proc. SPIE 1262, Novel cresol/chloroacetaldehyde novolacs for high-temperature resist applications, 0000 (1 June 1990); doi: 10.1117/12.20121
Proc. SPIE 1262, Improved CD uniformity as a function of developer chemistry and process parameters derived from a statistically designed experiment, 0000 (1 June 1990); doi: 10.1117/12.20122
Proc. SPIE 1262, ANR photoresist process optimization at 248 nm, 0000 (1 June 1990); doi: 10.1117/12.20123
Proc. SPIE 1262, Optimization of the dry development for the DESIRE process, 0000 (1 June 1990); doi: 10.1117/12.20124
Proc. SPIE 1262, EL2015: development of a submicron photoresist for G-, H-, and I-line exposure tools, 0000 (1 June 1990); doi: 10.1117/12.20125
Proc. SPIE 1262, Evaluation of resist materials for KrF excimer laser lithography, 0000 (1 June 1990); doi: 10.1117/12.20126
Proc. SPIE 1262, Submicron imaging at 248.3 nm: a lithographic performance review of an advanced negative resist, 0000 (1 June 1990); doi: 10.1117/12.20127
Proc. SPIE 1262, I-line photolithography: an investigation of resist bleachability and process performance, 0000 (1 June 1990); doi: 10.1117/12.20129
Dry Develop
Proc. SPIE 1262, Sub-half-micron deep-UV lithography using wet and dry developable resist schemes, 0000 (1 June 1990); doi: 10.1117/12.20130
Diazo Materials
Proc. SPIE 1262, Novel diazonaphthoquinone photoactive compound for G-line/I-line compatible positive photoresist, 0000 (1 June 1990); doi: 10.1117/12.20131
New Materials
Proc. SPIE 1262, Very thin multicomponent resists prepared by Langmuir-Blodgett techniques, 0000 (1 June 1990); doi: 10.1117/12.20132
Acid Catalyzed Systems
Proc. SPIE 1262, Chemically amplified DUV photoresists using a new class of photoacid-generating compounds, 0000 (1 June 1990); doi: 10.1117/12.20133
Poster Session: Resist Technology
Proc. SPIE 1262, Highly sensitive x-ray and electron-beam resists using chemical amplification, 0000 (1 June 1990); doi: 10.1117/12.20134
Proc. SPIE 1262, Modified polyhydroxystyrenes as matrix resins for dissolution inhibition type photoresists, 0000 (1 June 1990); doi: 10.1117/12.20135
Acid Catalyzed Systems
Proc. SPIE 1262, Development of a chemically amplified positive resist material for single-layer deep-UV lithography, 0000 (1 June 1990); doi: 10.1117/12.20136
Poster Session: Resist Technology
Proc. SPIE 1262, Formation of latent images and resist profiles in the DESIRE process, 0000 (1 June 1990); doi: 10.1117/12.20137
Proc. SPIE 1262, Image formation mechanism in PMMA-MAA antracene positive photoresist exposed by pulsed laser and kinetics of its development, 0000 (1 June 1990); doi: 10.1117/12.20138
Proc. SPIE 1262, New KrF excimer laser process for improving novolac-type photoresist resolution, 0000 (1 June 1990); doi: 10.1117/12.20139
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