Dr. Keeho Kim Profile

Dr. Keeho Kim

at HFC

SPIE Involvement:

Author

Publications (39)

Proceedings Article | 28 April 2023 Poster + Paper

Co-optimization of optical and resist models in the OPC modeling process using in-house genetic algorithm

Yinuo Pan, Yingfang Wang, Norman Chen, Keeho Kim, Eric Parent

Proceedings Volume 12495, 124951Q (2023) https://doi.org/10.1117/12.2657959

KEYWORDS: Optical proximity correction, Mathematical optimization, Modeling, Model-based design, Genetic algorithms, Process modeling, Photoresist processing, Semiconducting wafers, Overfitting, Wafer-level optics

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Proceedings Article | 4 April 2008 Paper

Impact of surface treatment on resist reflow process

Young-Je Yun, Jin-Ho Park, Hakyu Choi, Seung Ryong Park, Kwangseon Choi, Jea-Hee Kim, Jae-Won Han

Proceedings Volume 6923, 69233K (2008) https://doi.org/10.1117/12.772534

KEYWORDS: Critical dimension metrology, Photoresist processing, Head-mounted displays, Glasses, Cadmium, Lithography, Semiconducting wafers, Inspection, Resolution enhancement technologies, Lenses

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Proceedings Article | 7 March 2008 Paper

Extension of low k1 lithography processes with KrF for 90nm technology node

Sungho Jun, Eunsoo Jeong, Youngje Yun, Kwangseon Choi, Jeahee Kim, Jaewon Han

Proceedings Volume 6924, 692439 (2008) https://doi.org/10.1117/12.772537

KEYWORDS: Lithography, Critical dimension metrology, Line edge roughness, Etching, Image processing, Resolution enhancement technologies, Photomasks, Optical lithography, Image resolution, Edge roughness

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Proceedings Article | 7 March 2008 Paper

90nm node contact hole patterning through applying model based OPC in KrF lithography

Young-Doo Jeon, Sang-Uk Lee, Jaeyoung Choi, Jeahee Kim, Jaewon Han

Proceedings Volume 6924, 69242W (2008) https://doi.org/10.1117/12.773075

KEYWORDS: Optical proximity correction, Lithography, Critical dimension metrology, Photomasks, Optical lithography, Lithographic illumination, Semiconducting wafers, Resolution enhancement technologies, Image processing, Scanners

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Proceedings Article | 7 March 2008 Paper

OPC modeling setup with considering flare effect

Jong-doo Kim, Jae-young Choi, Jea-hee Kim, Jae-won Han

Proceedings Volume 6924, 692442 (2008) https://doi.org/10.1117/12.772454

KEYWORDS: Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Data modeling, Light scattering, Photomasks, Lens design, Manufacturing, Lithography, Optimization (mathematics)

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Proceedings Article | 16 November 2007 Paper

Fundamental study on the error factor for sub 90nm OPC modeling

Hyesung Lee, Sang-Uk Lee, Jeahee Kim, Keeho Kim

Proceedings Volume 6730, 673058 (2007) https://doi.org/10.1117/12.746821

KEYWORDS: Optical proximity correction, Systems modeling, Data modeling, Diffusion, Model-based design, Calibration, Lithography, Critical dimension metrology, Process modeling, Image processing

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Proceedings Article | 1 November 2007 Paper

Application of modified jog-fill DRC rule on LFD OPC flow

Young-Mi Kim, Sang-Uk Lee, Jea-Hyun Kang, Jea-Hee Kim, Kee-Ho Kim

Proceedings Volume 6730, 67303W (2007) https://doi.org/10.1117/12.746811

KEYWORDS: Optical proximity correction, Semiconducting wafers, Lithography, Metals, Photomasks, Databases, Reticles, Optical lithography, Logic, Bridges

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Proceedings Article | 5 April 2007 Paper

The optimization of photoresist profile for sub-90nm technology

Haengleem Jeon, Cheonman Shim, Jiho Hong, Jaewon Han, Keeho Kim

Proceedings Volume 6518, 65184K (2007) https://doi.org/10.1117/12.711965

KEYWORDS: Photoresist materials, Line edge roughness, Temperature metrology, Etching, Optical lithography, Scanning electron microscopy, Diffusion, Lithography, Reflectivity, Process control

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Proceedings Article | 5 April 2007 Paper

Resolution enhancement technique using oxidation process with nitride hardmask process

Eunsoo Jeong, Jaehee Kim, Keeho Kim, Daeyoung Kim, Hyunju Lim

Proceedings Volume 6518, 65183V (2007) https://doi.org/10.1117/12.712017

KEYWORDS: Silicon, Oxides, Optical lithography, Etching, Resolution enhancement technologies, Photomasks, Lithography, Image processing, Double patterning technology, Oxidation

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Proceedings Article | 5 April 2007 Paper

Optimization of lithography process to improve image deformation of contact hole sub-90 nm technology node

Sungho Jun, Juhyun Kim, Eunsoo Jeong, Youngje Yun, Jaehee Kim, Keeho Kim

Proceedings Volume 6518, 65183T (2007) https://doi.org/10.1117/12.711978

KEYWORDS: Image processing, Photomasks, Lithography, Edge roughness, Etching, Critical dimension metrology, Image analysis, Resistance, Image resolution, Failure analysis

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Proceedings Article | 5 April 2007 Paper

Enhanced hole shape of flash devices in ArF lithography by eliptical mask bias technique

Young-Doo Jeon, Sungho Jun, Jae-Hyun Kang, Sang-Uk Lee, Jeahee Kim, Keeho Kim

Proceedings Volume 6518, 65183W (2007) https://doi.org/10.1117/12.712016

KEYWORDS: Photomasks, Optical proximity correction, Optical lithography, Lithography, Diffraction, Data modeling, Process modeling, Optical properties, Semiconductor manufacturing, Bridges

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Proceedings Article | 4 April 2007 Paper

Methodology to set up accurate OPC model using optical CD metrology and atomic force microscopy

Yeon-Ah Shim, Jaehyun Kang, Sang-Uk Lee, Jeahee Kim, Keeho Kim

Proceedings Volume 6518, 65180C (2007) https://doi.org/10.1117/12.711936

KEYWORDS: Data modeling, Critical dimension metrology, Optical proximity correction, Atomic force microscopy, Scanning electron microscopy, Semiconducting wafers, Wafer-level optics, Statistical modeling, Electron beams, Metrology

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Proceedings Article | 30 March 2007 Paper

Optimization of hardmask for dual anti-reflection layers

Ju-Hyun Kim, Jeahee Kim, Keeho Kim

Proceedings Volume 6519, 65192W (2007) https://doi.org/10.1117/12.712003

KEYWORDS: Photomasks, Etching, Reflectivity, Silicon, Silicon carbide, Dielectrics, Plasma etching, Refractive index, Interfaces, Plasma enhanced chemical vapor deposition

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Proceedings Article | 27 March 2007 Paper

Advanced new OPC method to improve OPC accuracy for sub-90-nm technology

Jaeyoung Choi, Jaehyun Kang, Yeonah Shim, Kyunghee Yun, Jiho Hong, Yongseok Lee, Keeho Kim

Proceedings Volume 6520, 652047 (2007) https://doi.org/10.1117/12.712001

KEYWORDS: Data modeling, Optical proximity correction, Data conversion, Process modeling, Critical dimension metrology, Reactive ion etching, Scanning electron microscopy, Photomasks, Etching, Image processing

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Proceedings Article | 26 March 2007 Paper

Flare effect of different shape of illumination apertures in 193-nm optical lithography system

Young-Je Yun, Jeahee Kim, Keeho Kim

Proceedings Volume 6520, 65202T (2007) https://doi.org/10.1117/12.711634

KEYWORDS: Lithographic illumination, Diffraction, Light scattering, Photoresist processing, Lithography, Image processing, Optical lithography, Photomasks, Light, Critical dimension metrology

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Proceedings Article | 21 March 2007 Paper

Image tone optimization in advanced mask making for DUV lithography

Jong-doo Kim, Mun-hoe Do, Seong-ho Jeong, Jea-hee Kim, Keeho Kim

Proceedings Volume 6519, 65193L (2007) https://doi.org/10.1117/12.712038

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Manufacturing, Semiconducting wafers, Deep ultraviolet, Image processing, Photoresist processing, Lithography, Process modeling

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Proceedings Article | 21 March 2007 Paper

The study for increasing efficiency of OPC verification by reducing false errors from bending pattern by using different size of CD error non-checking area with various corner lengths

Sang-Uk Lee, Yong-Suk Lee, Jeahee Kim, Keeho Kim

Proceedings Volume 6521, 65210S (2007) https://doi.org/10.1117/12.711959

KEYWORDS: Bridges, Lithography, Electronic design automation, Image filtering, Resolution enhancement technologies, Inspection, Semiconductors, Optical calibration, Error analysis, Optical proximity correction

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Proceedings Article | 21 March 2007 Paper

Application of enhanced dynamic fragmentation to minimize false error from post OPC verification

Jae-Hyun Kang, Sang uk Lee, Jeahee Kim, Keeho Kim

Proceedings Volume 6521, 65210U (2007) https://doi.org/10.1117/12.711950

KEYWORDS: Optical proximity correction, Bridges, Model-based design, Photomasks, Neodymium, Lithography, Data modeling, System on a chip, Logic devices, Process modeling

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Proceedings Article | 20 October 2006 Paper

The effect of sub-layer condition on the OPC model

Jaeyoung Choi, Jaehyun Kang, Yeonah Shim, Kyunghee Yun, Junseok Lee, Yongseok Lee, Keeho Kim

Proceedings Volume 6349, 63494O (2006) https://doi.org/10.1117/12.686653

KEYWORDS: Data modeling, Optical proximity correction, Statistical modeling, Critical dimension metrology, Process modeling, Lithography, Scanners, Photoresist materials, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 20 October 2006 Paper

Efficient approach to improving pattern fidelity with multi-OPC model and recipe

Munhoe Do, Jaehyun Kang, Jaeyoung Choi, Junseok Lee, Yongsuk Lee, Keeho Kim

Proceedings Volume 6349, 63494P (2006) https://doi.org/10.1117/12.686655

KEYWORDS: Optical proximity correction, Logic, Databases, System on a chip, Data modeling, Photomasks, Instrument modeling, Manufacturing, Electronics, Distortion

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Proceedings Article | 20 May 2006 Paper

A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin

Se-Jin Park, Kyung-Hee Yoon, Jae-Hyun Kang, Jae-Young Choi, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6283, 62831K (2006) https://doi.org/10.1117/12.681745

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Lithography, Laser systems engineering, Electron beam lithography, Critical dimension metrology, Scanners, Back end of line, Data modeling

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Proceedings Article | 11 April 2006 Paper

Transistor fabrication for sub-90 nm transistor by using trim technology at ArF light source

Jin-Youp Kim, Jeong-Yeol Jang, Jae-Hee Kim, Keeho Kim

Proceedings Volume 6153, 61532Z (2006) https://doi.org/10.1117/12.657078

KEYWORDS: Etching, Photoresist materials, Line edge roughness, Lithography, Transistors, Photomasks, Process control, Silicon, Resistance, Optical lithography

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Proceedings Article | 21 March 2006 Paper

Methodology to set up mask CD specification including MEEF and process sensitivity of mask CD error

Yeon-Ah Shim, Se-Jin Park, Ju-Hyun Kim, Jea-Hee Kim, Kee-Ho Kim

Proceedings Volume 6154, 61544B (2006) https://doi.org/10.1117/12.657081

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Lithography, Electroluminescence, Process control, Optical lithography, Reticles, Cadmium

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Proceedings Article | 20 March 2006 Paper

Flare effect of different shape of illumination apertures in 193-nm optical lithography system

Young-Je Yun, Ju-Hyung Moon, Haeng-Leem Jeon, Jea-Hee Kim, Keeho Kim

Proceedings Volume 6154, 615435 (2006) https://doi.org/10.1117/12.656999

KEYWORDS: Light scattering, Diffraction, Photomasks, Lithographic illumination, Optical lithography, Lithography, Critical dimension metrology, Light, Reflection, Photoresist processing

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Proceedings Article | 20 March 2006 Paper

Simulation based post OPC verification to enhance process window, critical failure analysis, and yield

Jae-Hyun Kang, Jae-Young Choi, Kyung-Hee Yun, Munho Do, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6154, 61543J (2006) https://doi.org/10.1117/12.657050

KEYWORDS: Optical proximity correction, Process modeling, Critical dimension metrology, Photomasks, Bridges, Lithography, Semiconducting wafers, Failure analysis, Data modeling, Scanning electron microscopy

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Proceedings Article | 20 March 2006 Paper

Mask process variation induced OPC accuracy in sub-90nm technology node

Se-Jin Park, Yeon-Ah Shim, Jae-Hyun Kang, Jae-Young Choi, Kyung-Hee Yoon, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6154, 61543K (2006) https://doi.org/10.1117/12.657036

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Electroluminescence, Critical dimension metrology, Lithography, Data modeling, Error analysis, Logic, Etching

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Proceedings Article | 12 May 2005 Paper

Modified optical proximity correction model to compensate pattern density induced optical proximity effect

Jaehyun Kang, Juhyun Kim, Sukwon Jung, Honglae Kim, Keeho Kim

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601420

KEYWORDS: Optical proximity correction, Etching, Lithography, Image processing, Semiconducting wafers, Critical dimension metrology, Data modeling, Process modeling, Instrument modeling, Scanning electron microscopy

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Proceedings Article | 10 May 2005 Paper

Scatterometry measurement method for gate CD control of sub-130nm technology

Jeongyeol Jang, Sungho Kwak, Karl Lee, Keeho Kim, Heongsu Park, James Youn, Lucas Sohn

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601581

KEYWORDS: Critical dimension metrology, Scatterometry, Scanning electron microscopy, Semiconducting wafers, Process control, Etching, Metrology, Diffraction gratings, Scatter measurement, Lithography

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Proceedings Article | 14 May 2004 Paper

Explanation of LER using the concept of gel layer in chemically amplified photoresists

Joon Yeon Cho, Se Jin Choi, Yong Jun Choi, Hong Lae Kim, Kee Ho Kim

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535406

KEYWORDS: Line edge roughness, Photoresist materials, Photoresist developing, Polymers, Interfaces, Optical lithography, Diffusion, Photoresist processing, Molecules, Semiconductors

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Proceedings Article | 30 July 2002 Paper

OPC rectification of random space patterns in 193-nm lithography

Mosong Cheng, Andrew Neureuther, Keeho Kim, Z. Mark Ma, Won Kim, Maureen Hanratty

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474512

KEYWORDS: Optical proximity correction, Critical dimension metrology, Cadmium sulfide, Scanning electron microscopy, Process modeling, Photomasks, Printing, Lithography, Calibration, 193nm lithography

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Proceedings Article | 30 July 2002 Paper

Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches

Keeho Kim, Yong-Seok Choi, Robert Socha, Donis Flagello

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474573

KEYWORDS: Photomasks, Chromium, Optical proximity correction, Lithography, Critical dimension metrology, Scanners, Diffraction, Binary data, Semiconducting wafers, Neodymium

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Proceedings Article | 24 August 2001 Paper

Optimization of ArF resist for 100-nm node: DOE and fine-tuning of basic platform

Keeho Kim, Gregory Wells, Won Kim, Yong-Jun Choi, Se-Jin Choi, Yang-Sook Kim, Deog-Bae Kim

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436846

KEYWORDS: Diffractive optical elements, Photomasks, Lithography, Line edge roughness, Monochromatic aberrations, Scanners, Photoresist processing, Scanning electron microscopy, Manufacturing, Etching

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Proceedings Article | 22 January 2001 Paper

Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process

Shane Palmer, Mark Mason, John Randall, Tom Aton, Keeho Kim, Alexander Tritchkov, James Burdorf, Michael Rieger, John Stirniman

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410679

KEYWORDS: Optical proximity correction, Photomasks, Binary data, Data modeling, Etching, Phase shifts, Optical lithography, Databases, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 5 July 2000 Paper

Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication

Keeho Kim, Mark Mason, John Randall, Won Kim

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388957

KEYWORDS: Photomasks, Lithography, Deep ultraviolet, Critical dimension metrology, Electroluminescence, Optical lithography, Semiconducting wafers, Optical proximity correction, Printing, 193nm lithography

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Proceedings Article | 5 July 2000 Paper

Mask error factor impact on the 130-nm node

John Randall, Christopher Baum, Keeho Kim, Mark Mason

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389049

KEYWORDS: Phase shifts, Binary data, Photomasks, Optical proximity correction, Reticles, Optical lithography, Semiconducting wafers, Printing, Lithography, Cadmium

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Proceedings Article | 5 July 2000 Paper

Manufacturability of 248-nm phase-shift lithography for 100-nm transistors

Mark Mason, John Randall, Keeho Kim

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388971

KEYWORDS: Transistors, Optical lithography, 193nm lithography, Manufacturing, Phase shifts, Lithography, Binary data, Semiconducting wafers, Reticles, Photomasks

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Proceedings Article | 7 June 1996 Paper

Characterization and optimization of CD control for 0.25-um CMOS applications

Kurt Ronse, Maaike Op de Beeck, Anthony Yen, Keeho Kim, Luc Van den Hove

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240924

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Reticles, Lithography, Software development, Optical lithography, Scanning electron microscopy, Photoresist processing, Deep ultraviolet, Control systems

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Proceedings Article | 26 May 1995 Paper

Optical proximity correction using a transmittance-controlled mask (TCM)

Woo-Sung Han, Chang-Jin Sohn, Yongbeom Kim, Keeho Kim, Hoyoung Kang, Young-Bum Koh, Moon-Yong Lee

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209279

KEYWORDS: Photomasks, Transmittance, Optical proximity correction, Scanning electron microscopy, Image processing, Phase shifts, Semiconducting wafers, Excimers, Capacitors, Lithography

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Proceedings Article | 17 May 1994 Paper

Characteristics of standing-wave effect of off-axis illumination depending on two different resist systems and the polarization effect of stepper

Keeho Kim, Woo-Sung Han, Chul Hong Kim, Hoyoung Kang, Choon-Geun Park, Young-Bum Koh

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175447

KEYWORDS: Photoresist materials, Chemical species, Reflectivity, Polarization, Lithographic illumination, Absorption, Lithography, Chemically amplified resists, Photomasks, Light sources

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Showing 5 of 39 publications

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