Dr. Charles R. Szmanda Profile

Dr. Charles R. Szmanda

Patent Agent at patent-practicecom

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Author

Publications (16)

Proceedings Article | 1 April 2009 Paper

Photoresist stabilization for double patterning using 172 nm photoresist curing

Thomas Wallow, Junyan Dai, Charles Szmanda, Hiram Cervera, Chi Truong, Nikolaos Bekiaris, Jong-Wook Kye, Ryoung-Han Kim, Harry Levinson, Glen Mori

Proceedings Volume 7273, 72730D (2009) https://doi.org/10.1117/12.814468

KEYWORDS: Photoresist processing, Semiconducting wafers, Double patterning technology, Ultraviolet radiation, Photoresist materials, Image processing, Optical lithography, Lithography, Fourier transforms, Antireflective coatings

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Proceedings Article | 1 April 2008 Paper

Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios

Andreas Erdmann, Peter Evanschitzky, Tim Fühner, Thomas Schnattinger, Cheng-Bai Xu, Chuck Szmanda

Proceedings Volume 6924, 692452 (2008) https://doi.org/10.1117/12.772741

KEYWORDS: Semiconducting wafers, Lithography, Refractive index, Double patterning technology, Photomasks, Computer simulations, Optical properties, Photoresist processing, Nonlinear optics, Superposition

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Proceedings Article | 28 March 2008 Paper

Film quantum yields of EUV and ultra-high PAG photoresists

Elsayed Hassanein, Craig Higgins, Patrick Naulleau, Richard Matyi, Gregg Gallatin, Gregory Denbeaux, Alin Antohe, Jim Thackeray, Kathleen Spear, Charles Szmanda, Christopher Anderson, Dimitra Niakoula, Matthew Malloy, Anwar Khurshid, Cecilia Montgomery, Emil Piscani, Andrew Rudack, Jeff Byers, Andy Ma, Kim Dean, Robert Brainard

Proceedings Volume 6921, 69211I (2008) https://doi.org/10.1117/12.774099

KEYWORDS: Quantum efficiency, Extreme ultraviolet lithography, Photoresist materials, Extreme ultraviolet, X-rays, Absorbance, Photons, Coating, Reflectometry, Line edge roughness

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Proceedings Article | 22 March 2007 Paper

Etch resistance: comparison and development of etch rate models

Damien Perret, Cecily Andes, Kap-Soo Cheon, Mani Sobhian, Charles Szmanda, George Barclay, Peter Trefonas

Proceedings Volume 6519, 651912 (2007) https://doi.org/10.1117/12.712242

KEYWORDS: Etching, Polymers, Photoresist materials, Resistance, Chemical species, Lithography, Error analysis, Photoresist developing, Data modeling, Statistical modeling

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Proceedings Article | 24 July 2002 Paper

Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography

Gary Taylor, Cheng-Bai Xu, Gary Teng, JoAnne Leonard, Charles Szmanda, William Lawrence, Sassan Nur, Kirk Brown, Al Stephen

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474261

KEYWORDS: Absorbance, Polymers, Lithography, Silicon, Etching, Absorption, Plasma etching, Resistance, Reflectivity, Optical lithography

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Proceedings Article | 24 August 2001 Paper

Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157 nm

Adam Pawloski, Charles Szmanda, Paul Nealey

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436830

KEYWORDS: Vacuum ultraviolet, Absorption, Deep ultraviolet, X-rays, Ionizing radiation, Photoresist materials, Data modeling, Photochemistry, Photoresist processing, Extreme ultraviolet lithography

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Proceedings Article | 23 August 2000 Paper

New method for determining the optical properties of thin films by reflectometry

John Bohland, Edward Pavelchek, Charles Szmanda

Proceedings Volume 4182, (2000) https://doi.org/10.1117/12.410068

KEYWORDS: Reflectivity, Antireflective coatings, Semiconducting wafers, Refractive index, Photoresist materials, Optical properties, Thin films, Reflectometry, Spectral models, Silicon

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Proceedings Article | 26 July 1999 Paper

Effect of exposure tool illumination settings and objective numerical aperture on the standing wave period within photoresist

Stewart Robertson, Frank Linskens, Charles Szmanda, Kevin Dempsey

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354301

KEYWORDS: Refractive index, Lithographic illumination, Photoresist materials, Objectives, Interfaces, Photomasks, Imaging systems, Lithography, Inspection, Refraction

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Proceedings Article | 11 June 1999 Paper

Simple method for measuring acid generation quantum efficiency at 193 nm

Charles Szmanda, Robert Kavanagh, John Bohland, James Cameron, Peter Trefonas, Robert Blacksmith

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350274

KEYWORDS: Absorbance, Quantum efficiency, Polymers, Chemically amplified resists, Chemical analysis, Absorption, Statistical analysis, Contamination, Photons, Chemistry

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Proceedings Article | 11 June 1999 Paper

Organic antireflective coatings for 193-nm lithography

Peter Trefonas, Robert Blacksmith, Charles Szmanda, Robert Kavanagh, Timothy Adams, Gary Taylor, Suzanne Coley, Gerd Pohlers

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350257

KEYWORDS: Reflectivity, Polymers, Chromophores, Antireflective coatings, Lithography, Interfaces, Absorption, Coating, Etching, Refraction

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Proceedings Article | 11 June 1999 Paper

Methacrylate resists and antireflective coatings for 193-nm lithography

Gary Taylor, Peter Trefonas, Charles Szmanda, George Barclay, Robert Kavanagh, Robert Blacksmith, Lori Joesten, Michael Monaghan, Suzanne Coley, Zhibiao Mao, James Cameron, Ricky Hardy, Dana Gronbeck, S. Connolly

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350199

KEYWORDS: Etching, Lithography, Polymers, Antireflective coatings, Resistance, Plasmas, Silicon, Standards development, Photoresist processing, Deep ultraviolet

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Proceedings Article | 7 July 1997 Paper

Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

Charles Szmanda, Jaclyn Yu, George Barclay, James Cameron, Robert Kavanagh, Robert Blacksmith, Peter Trefonas, Gary Taylor

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275836

KEYWORDS: Polymers, Etching, Lithography, Chemistry, Interfaces, Absorbance, Diffusion, Resistance, Solids, Liquids

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Proceedings Article | 16 May 1994 Paper

Role of process in obtaining optimum lithographic information from chemically amplified resists

Charles Szmanda, Theodore Fedynyshyn, William Houck, Jonathan Root, Robert Blacksmith

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175344

KEYWORDS: Diffusion, Lithography, Photoresist processing, Chemically amplified resists, Photomasks, Chemistry, Silicon, Information theory, Chemical reactions, Mathematical modeling

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Proceedings Article | 16 May 1994 Paper

Dissolution inhibition of phenolic polymers: does a simple percolation field scaling law suffice?

Peter Trefonas, Gerald Vizvary, Jonathan Root, Catherine Meister, Charles Szmanda

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175384

KEYWORDS: Polymers, Diffusion, Chemistry, Picture Archiving and Communication System, Semiconducting wafers, Systems modeling, Molecules, Data acquisition, Information operations, Spatial analysis

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Proceedings Article | 15 September 1993 Paper

Relationship between resist performance and diffusion in chemically amplified resist systems

Theodore Fedynyshyn, Charles Szmanda, Robert Blacksmith, William Houck

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154742

KEYWORDS: Diffusion, Chemically amplified resists, Photoresist processing, Image acquisition, Image processing, Performance modeling, Lithography, Process modeling, Thermal modeling, Semiconducting wafers

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Proceedings Article | 1 July 1991 Paper

Simulations of bar printing over a MOSFET device using i-line and deep-UV resists

Eytan Barouch, Uwe Hollerbach, Steven Orszag, Charles Szmanda, James Thackeray

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44805

KEYWORDS: Deep ultraviolet, Diffusion, Printing, Field effect transistors, Molecules, Computer simulations, Numerical simulations, Photoresist processing, Optical lithography, Numerical analysis

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Showing 5 of 16 publications

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