This will count as one of your downloads.
You will have access to both the presentation and article (if available).
IR-drop analysis for validating power grids and standard cell architectures in sub-10nm node designs
The goal of our work is to calculate the variation in mask reflectivity due to various sources of inaccuracies using Monte Carlo simulations. Such calculation is necessary as small changes in the thickness and optical properties of the high-Z and low-Z materials can cause substantial variations in reflectivity. This is further complicated by undesirable intermixing between the two materials used to create the reflector.5 One of the key contributors to mask reflectivity fluctuation is identified to be the intermixing layer thickness. We also investigate the impacts on OPC when the wrong mask information is provided, and evaluate the deterioration of overlapping process window. For a hypothetical N7 via layer, the lack of accurate mask information costs 25% of the depth of focus at 5% exposure latitude. Our work would allow the determination of major contributors to mask reflectivity variation, drive experimental efforts of measuring such contributors, provide strategies to optimize mask reflectivity, and quantize the OPC errors due to imperfect mask modeling.
Simulation predicts that NTD resist profiles should often have retrograde sidewall angles due to the attenuation of light as it propagates down through the resist. Resist shrinkage induced from both the de-protection during PEB and from exposure to electrons during SEM can cause CD and sidewall changes. The interplay between the shrinkage and the retrograde sidewalls is discussed.
Deprotection-induced shrinkage is measured by AFM while SEM induced shrinkage is estimated from repeated SEM measurements. SEM images for various features are analyzed and compared to simulation.
This will count as one of your downloads.
You will have access to both the presentation and article (if available).
The advent of ultra high numerical aperture (NA) systems enabled by immersion lithography has quickly brought polarization toward the top of the lithographer's list of concerns. A high index liquid between the resist and the last lens element allows better resolution by enabling larger angles of incidence, and thus more diffraction energy to couple into the resist. However various polarizing effects can become severe with these large angles of incidence. Most notably contrast from the TM component drops to near or below zero. Thus, the engineering of polarization states is becoming a necessary resolution enhancement technique. Consequently, understanding and controlling polarization throughout all components of the optical system become critical.
This course provides the lithographer a basic knowledge of polarization and its application to high-NA imaging. After an introduction to the concept of polarization and the various ways it can be represented, both the benefits and limitations of its application to lithography are discussed. The polarizing effects of each component of the optical system are addressed, offering an understanding of their ultimate impact on imaging.
View contact details
No SPIE Account? Create one
