Dr. Takashi Kamo Profile

Dr. Takashi Kamo

at Kioxia Corp

SPIE Involvement:

Author

Publications (41)

Proceedings Article | 29 September 2019 Presentation + Paper

Presentation + Paper

Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer

Keisuke Chiba, Ai Kumada, Keiko Morishita, Kosuke Takai, Ryoji Yoshikawa, Yukiyasu Arisawa, Takashi Kamo, Masato Naka, Shingo Kanamitsu, Eishi Shiobara

Proceedings Volume 11148, 111480X (2019) https://doi.org/10.1117/12.2536474

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Line width roughness, Signal to noise ratio, Deep ultraviolet, Scanning electron microscopy, Critical dimension metrology, Extreme ultraviolet lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

Presentation + Paper

Influence of mask line width roughness on programmed pattern defect printability

Takeshi Yamane, Yasutaka Morikawa, Takashi Kamo

Proceedings Volume 10957, 109570M (2019) https://doi.org/10.1117/12.2515145

KEYWORDS: Photomasks, Line width roughness, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet, Extreme ultraviolet lithography, Metrology, Edge roughness, Defect inspection

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Proceedings Article | 26 March 2019 Presentation + Paper

Presentation + Paper

Mask 3D effect reduction and defect printability of etched multilayer EUV mask

Takashi Kamo, Takeshi Yamane, Yasutaka Morikawa, Susumu Iida, Takayuki Uchiyama, Shunko Magoshi, Satoshi Tanaka

Proceedings Volume 10957, 109571C (2019) https://doi.org/10.1117/12.2515273

KEYWORDS: Photomasks, Extreme ultraviolet, Tantalum, Semiconducting wafers, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Lithographic illumination, Line width roughness, Line edge roughness

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Proceedings Article | 12 June 2018 Paper

Paper

Fabrication of Ta based absorber EUV mask with SRAF

Keiko Morishita, Kosuke Takai, Kenji Masui, Takashi Kamo, Tsukasa Abe, Yasutaka Morikawa, Naoya Hayashi

Proceedings Volume 10807, 108070F (2018) https://doi.org/10.1117/12.2503150

KEYWORDS: Photomasks, Line width roughness, Extreme ultraviolet, SRAF, Extreme ultraviolet lithography, Tantalum, Scanning electron microscopy, Chromium

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Proceedings Article | 12 June 2018 Paper

Paper

Blank defect coverage budget for 16nm half-pitch single EUV exposure

Rik Jonckheere, Takeshi Yamane, Takashi Kamo, Yasutaka Morikawa

Proceedings Volume 10807, 108070H (2018) https://doi.org/10.1117/12.2502792

KEYWORDS: Printing, Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Atomic force microscopy, Extreme ultraviolet, Visualization, Inspection, Tolerancing, Optical alignment

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Proceedings Article | 19 March 2018 Paper

Paper

Printability estimation of EUV blank defect using actinic image

Takeshi Yamane, Takashi Kamo, Rik Jonckheere

Proceedings Volume 10583, 105831F (2018) https://doi.org/10.1117/12.2297503

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Extreme ultraviolet, Wafer-level optics, Extreme ultraviolet lithography, Multilayers, Inspection, Image processing, Optical alignment

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Proceedings Article | 16 October 2017 Paper

Paper

DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm

Masato Naka, Akihiko Ando, Keiko Morishita, Ryoji Yoshikawa, Takashi Kamo, Takashi Hirano, Masamitsu Itoh

Proceedings Volume 10451, 104510K (2017) https://doi.org/10.1117/12.2280504

KEYWORDS: Extreme ultraviolet, Inspection, Photomasks, Nanoimprint lithography, Deep ultraviolet, Scanning electron microscopy, Signal to noise ratio, Target detection, Defect detection, Semiconducting wafers

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Proceedings Article | 10 May 2016 Paper

Paper

Etched multilayer EUV mask fabrication for sub-60nm pattern based on effective mirror width

Noriko Iida, Yasutaka Morikawa, Naoya Hayashi, Kosuke Takai, Takashi Kamo

Proceedings Volume 9984, 99840E (2016) https://doi.org/10.1117/12.2242872

KEYWORDS: Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Photomasks, Multilayers, Transmission electron microscopy, Image processing, Photoresist processing, Scanning electron microscopy, Radon

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Proceedings Article | 23 October 2015 Paper

Paper

Process capability of etched multilayer EUV mask

Yasutaka Morikawa, Naoya Hayashi, Kosuke Takai, Takashi Kamo, Noriko Iida nee Sakurai

Proceedings Volume 9635, 96351C (2015) https://doi.org/10.1117/12.2197686

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Mask cleaning, Multilayers, Transmission electron microscopy, Image processing, Reflectivity, Inspection, Particles, Neodymium

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Proceedings Article | 16 September 2014 Paper

Paper

Capability of etched multilayer EUV mask fabrication

Yasutaka Morikawa, Kosuke Takai, Koji Murano, Takashi Kamo, Naoya Hayashi

Proceedings Volume 9235, 923515 (2014) https://doi.org/10.1117/12.2067892

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Reflectivity, Scanning electron microscopy, Extreme ultraviolet lithography, Mask making, Projection systems, Ultraviolet radiation, Binary data

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Proceedings Article | 1 October 2013 Paper

Paper

Patterning of EUVL binary etched multilayer mask

Kosuke Takai, Takeharu Motokawa, Koji Murano, Takashi Kamo, Naoya Hayashi

Proceedings Volume 8880, 88802M (2013) https://doi.org/10.1117/12.2033258

KEYWORDS: Photomasks, Etching, Extreme ultraviolet lithography, Binary data, Ruthenium, Tantalum, Lithography, Optical lithography, Photoresist processing, Wafer-level optics

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Proceedings Article | 2 August 2013 Paper

Paper

Improvement of EUVL mask structure with black border of etched multilayer

Kosuke Takai, Koji Murano, Eiji Yamanaka, Shinji Yamaguchi, Masato Naka, Takashi Kamo, Naoya Hayashi

Proceedings Volume 8701, 87010Y (2013) https://doi.org/10.1117/12.2031582

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Inspection, Extreme ultraviolet, Bridges, Deep ultraviolet, Reflectivity, Lithography, Scanning electron microscopy, Ruthenium

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Proceedings Article | 30 June 2012 Paper

Paper

Defect management of EUV mask

Shinji Yamaguchi, Ryoji Yoshikawa, Kazuki Hagihara, Naoya Hayashi, Takashi Kamo, Kosuke Takai, Masamitsu Itoh, Suigen Kyoh, Masato Naka, Koji Murano, Keiko Morishita

Proceedings Volume 8441, 844118 (2012) https://doi.org/10.1117/12.978976

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Semiconducting wafers, Scanning electron microscopy, Printing, Optical lithography, Defect detection, Bismuth, Extreme ultraviolet

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Proceedings Article | 20 April 2011 Paper

Paper

EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond

Mari Nozoe, Hiroyuki Shigemura, Takeshi Yamane, Noriaki Takagi, Toshihiko Tanaka, Tomohiro Tamori, Takashi Kamo, Osamu Suga, Tsuneo Terasawa, Shinji Kubo

Proceedings Volume 7971, 797123 (2011) https://doi.org/10.1117/12.879346

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect detection, Extreme ultraviolet, Wafer inspection, Defect inspection, Line width roughness, Image processing, Signal to noise ratio

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Proceedings Article | 8 April 2011 Paper

Paper

Overlay accuracy of EUV1 using compensation method for nonflatness of mask

Osamu Suga, Masamitsu Itoh, Kazuya Ota, Takashi Kamo, Shusuke Yoshitake, Hiroyuki Tanaka, Yuusuke Tanaka

Proceedings Volume 7969, 796936 (2011) https://doi.org/10.1117/12.879340

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Photovoltaics, Semiconducting wafers, Source mask optimization, Overlay metrology, Extreme ultraviolet, Scanners, Lithography, Distortion

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Proceedings Article | 7 April 2011 Paper

Paper

CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Tetsunori Murachi, Taiga Uno, Hajime Aoyama, Kazuo Tawarayama, Takashi Kamo, Gilroy Vandentop, Yashesh Shroff, Yuusuke Tanaka, Alan Myers, Toshihiko Tanaka, Ichiro Mori, Yukiyasu Arisawa

Proceedings Volume 7969, 79691J (2011) https://doi.org/10.1117/12.878672

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet lithography, Logic, Photomasks, Optical proximity correction, Model-based design, Lithography, Point spread functions, Electronic design automation

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Proceedings Article | 6 April 2011 Paper

Paper

Phase defect printability and actinic dark-field mask blank inspection capability analyses

Tsuneo Terasawa, Osamu Suga, Takeshi Yamane, Toshihiko Tanaka, Takashi Kamo

Proceedings Volume 7969, 79690V (2011) https://doi.org/10.1117/12.879398

KEYWORDS: Inspection, Photomasks, Defect detection, Critical dimension metrology, Signal detection, Extreme ultraviolet lithography, Semiconducting wafers, Printing, Extreme ultraviolet, Cameras

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Proceedings Article | 29 March 2011 Paper

Paper

Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection

Osamu Suga, Hiroyuki Shigemura, Tsuyoshi Amano, Tsuneo Terasawa, Ichiro Mori, Mari Nozoe, Takeshi Yamane, Toshihiko Tanaka, Kazuo Tawarayama, Noriaki Takagi, Takashi Kamo

Proceedings Volume 7969, 79690J (2011) https://doi.org/10.1117/12.879551

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Scanning electron microscopy, Multilayers, Extreme ultraviolet lithography

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SPIE Journal Paper | 1 October 2010

Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, Osamu Suga

JM3, Vol. 9, Issue 04, 041204, (October 2010) https://doi.org/10.1117/12.10.1117/1.3494618

KEYWORDS: Photomasks, Line width roughness, Image processing, Scanning electron microscopy, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Photoresist processing, Semiconducting wafers, Tolerancing

Read Abstract +

Proceedings Article | 29 September 2010 Paper

Paper

Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool

Takeshi Yamane, Toshihiko Tanaka, Noriaki Takagi, Hiroyuki Shigemura, Tsuyoshi Amano, Ichiro Mori, Osamu Suga, Kazuo Tawarayama, Tsuneo Terasawa, Takashi Kamo

Proceedings Volume 7823, 78231U (2010) https://doi.org/10.1117/12.864305

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Particles, Extreme ultraviolet, Scanning electron microscopy, Lithography, Printing

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Proceedings Article | 27 May 2010 Paper

Paper

Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance

Hajime Aoyama, Takashi Kamo, Osamu Suga, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka

Proceedings Volume 7748, 774805 (2010) https://doi.org/10.1117/12.867774

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet lithography, Multilayers, Extreme ultraviolet, Lithography, Semiconducting wafers, Coating, Reticles, Deep ultraviolet

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SPIE Journal Paper | 1 April 2010

Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process

Takashi Kamo, Yuusuke Tanaka, Toshihiko Tanaka, Iwao Nishiyama, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Tsutomu Shoki, Youichi Usui

JM3, Vol. 9, Issue 02, 023005, (April 2010) https://doi.org/10.1117/12.10.1117/1.3378154

KEYWORDS: Photomasks, Etching, Extreme ultraviolet lithography, Image processing, Multilayers, Photoresist processing, Photovoltaics, Lithography, Extreme ultraviolet, Coating

Read Abstract +

Proceedings Article | 23 March 2010 Paper

Paper

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Toshihiko Tanaka, Hajime Aoyama, Naofumi Nakamura, Yuusuke Tanaka, Kazuo Tawarayama, Ichiro Mori, Shuichi Saito, Noriaki Oda, Takashi Kamo, Taiga Uno, Eiichi Soda, Hiroyuki Tanaka, Yukiyasu Arisawa, Daisuke Kawamura, Kentaro Matsunaga

Proceedings Volume 7636, 76361N (2010) https://doi.org/10.1117/12.846325

KEYWORDS: Extreme ultraviolet lithography, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Photomasks, Etching, Photoresist processing, Overlay metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Paper

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Daisuke Kawamura, Naofumi Nakamura, Ichiro Mori, Hajime Aoyama, Shunko Magoshi, Yukiyasu Arisawa, Kazuo Tawarayama, Hiroyuki Tanaka, Noriaki Oda, Shuichi Saito, Kentaro Matsunaga, Takashi Kamo, Eiichi Soda, Yuusuke Tanaka, Taiga Uno

Proceedings Volume 7636, 76362D (2010) https://doi.org/10.1117/12.846315

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Metals, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Semiconductors, Anisotropy, Error analysis

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Proceedings Article | 23 March 2010 Paper

Paper

Improvement of EUV mask defect printability evaluation

Hiroyuki Shigemura, Osamu Suga, Noriaki Takagi, Tsuyoshi Amano, Takashi Kamo

Proceedings Volume 7636, 763621 (2010) https://doi.org/10.1117/12.846333

KEYWORDS: Opacity, Photomasks, Semiconducting wafers, Scanning electron microscopy, Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Printing, Computer simulations, Image analysis

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Proceedings Article | 20 March 2010 Paper

Paper

Impact of EUV mask absorber defect with pattern-roughness on lithographic images

Toshihiko Tanaka, Mihoko Kijima, Takashi Kamo, Osamu Suga, Yukiyasu Arisawa, Hajime Aoyama

Proceedings Volume 7636, 76360L (2010) https://doi.org/10.1117/12.846347

KEYWORDS: Photomasks, Line width roughness, Scanning electron microscopy, Extreme ultraviolet lithography, Image processing, Lithography, Extreme ultraviolet, Opacity, Semiconducting wafers, Line edge roughness

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Proceedings Article | 18 March 2010 Paper

Paper

Actinic phase defect detection and printability analysis for patterned EUVL mask

Osamu Suga, Ichiro Mori, Takashi Kamo, Tsuneo Terasawa, Toshihiko Tanaka, Takeshi Yamane

Proceedings Volume 7636, 763602 (2010) https://doi.org/10.1117/12.846678

KEYWORDS: Inspection, Photomasks, Defect detection, Extreme ultraviolet lithography, Extreme ultraviolet, Semiconducting wafers, Multilayers, EUV optics, Phase shifts, Bridges

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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Proceedings Article | 30 September 2009 Paper

Paper

Thin absorber EUVL mask with light-shield border for full-field scanner: flatness and image placement change through mask process

Yuusuke Tanaka, Toshihiko Tanaka, Osamu Suga, Tsutomu Shoki, Hiroshi Mohri, Tadahiko Takikawa, Takashi Kamo, Tsukasa Abe, Youichi Usui

Proceedings Volume 7488, 748818 (2009) https://doi.org/10.1117/12.829873

KEYWORDS: Photomasks, Etching, Image processing, Extreme ultraviolet lithography, Multilayers, Photoresist processing, Scanners, Coating, Optical lithography, Lithography

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Proceedings Article | 18 March 2009 Paper

Paper

Defect printability of thin absorber mask in EUV lithography

Toshihiko Tanaka, Yukiyasu Arisawa, Takashi Kamo, Osamu Suga, Hajime Aoyama

Proceedings Volume 7271, 72713I (2009) https://doi.org/10.1117/12.813653

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Opacity, Extreme ultraviolet, Lithography, Scanning electron microscopy, Image analysis, Computer simulations, Manufacturing

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Proceedings Article | 18 March 2009 Paper

Paper

Process liability evaluation for EUVL

Yukiyasu Arisawa, Yuusuke Tanaka, Takeshi Koshiba, Takashi Kamo, Hiroyuki Tanaka, Toshihiko Tanaka, Taiga Uno, Kohji Hashimoto, Yumi Nakajima, Hajime Aoyama, Daisuke Kawamura, Toshiro Itani, Ryoichi Inanami, Ichiro Mori, Koji Murano, Kazuo Tawarayama, Kosuke Takai

Proceedings Volume 7271, 727120 (2009) https://doi.org/10.1117/12.813484

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Point spread functions, Semiconducting wafers, Logic, Lithography, Electronic design automation, Projection systems, Mask making

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Proceedings Article | 17 October 2008 Paper

Paper

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Youichi Usui, Morio Hosoya, Tadahiko Takikawa, Hajime Aoyama, Toshihiko Tanaka, Naoya Hayashi, Takashi Kamo, Tsukasa Abe, Osamu Suga, Tsutomu Shoki

Proceedings Volume 7122, 712227 (2008) https://doi.org/10.1117/12.801576

KEYWORDS: Photomasks, Etching, Reflectivity, Extreme ultraviolet lithography, Multilayers, Photoresist processing, Coating, Extreme ultraviolet, Lawrencium, Lithography

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Proceedings Article | 19 May 2008 Paper

Paper

Effects of mask absorber thickness on printability in EUV lithography with high resolution resist

Takashi Kamo, Hajime Aoyama, Osamu Suga, Toshihiko Tanaka

Proceedings Volume 7028, 70281R (2008) https://doi.org/10.1117/12.793069

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Electroluminescence, Reflectivity, Lithography, Line width roughness, Refractive index, Silicon, Binary data, Molybdenum

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Proceedings Article | 3 April 2008 Paper

Paper

Particle-free mask handling techniques and a dual-pod carrier

Kazuya Ota, Mitsuaki Amemiya, Takashi Kamono, Takao Taguchi, Tadahiko Takikawa, Youichi Usui, Osamu Suga

Proceedings Volume 6921, 69213T (2008) https://doi.org/10.1117/12.771569

KEYWORDS: Particles, Photomasks, Extreme ultraviolet lithography, Inspection, Error analysis, Particle contamination, Reticles, Protactinium, Pellicles, Absorption

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Proceedings Article | 21 March 2008 Paper

Paper

Experimental evaluation of out-of-plane distortion of electrostatically chucked EUV reticle

Naosuke Nishimura, Mitsuaki Amemiya, Yasushi Nishiyama, Takao Taguchi, Youichi Usui, Takashi Kamono, Kazuya Ota, Tadahiko Takikawa, Osamu Suga

Proceedings Volume 6921, 69213S (2008) https://doi.org/10.1117/12.771339

KEYWORDS: Reticles, Particles, Carbon, Extreme ultraviolet, Quartz, Distortion, Silicon carbide, Interferometers, Photovoltaics, Semiconducting wafers

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Proceedings Article | 21 March 2008 Paper

Paper

Flare evaluation for 32-nm half pitch using SFET

Yukiyasu Arisawa, Nobuyuki Iriki, Yuusuke Tanaka, Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka

Proceedings Volume 6921, 69213H (2008) https://doi.org/10.1117/12.771857

KEYWORDS: Critical dimension metrology, Photomasks, Extreme ultraviolet lithography, Floods, Mirrors, Lithography, Projection systems, Semiconducting wafers, 3D modeling, Error analysis

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Flare degrades critical-dimension (CD) control in EUVL, a promising technology for the 32-nm half-pitch node. To deal with flare, high-quality projection optics in the exposure tool and flare variation compensation (FVC) technology with proper mask resizing are needed. Selete has installed a small-field exposure tool (SFET) with the goal of assessing resist performance. Due to the high-quality optics, the SFET allowed us to determine the required flare specification to be 6.1% or 6.6%, as calculated from the residual part of the low- or middle-frequency region, respectively. The flare level was confirmed through experimental results and from calculations using the power spectral density (PSD) obtained from the mirror roughness by the disappearing-resist method. The lithographic performance was evaluated using 32-nm-halfpitch patterns in a new resist. The resist characteristics can be explained by modeling blur as a Gaussian function with a σ of 8.8 nm and using a very accurate CD variation (< ~6 nm) obtained by taking into account the influences of mask CD error and flare on evaluation patterns. Since FVC is needed to obtain flare characteristics that do not degrade the CD, we used the double-exposure method to eliminate the influence of errors, including nonuniform dose distribution and CD mask error. Regardless of whether there was an open area or not, there was no difference in CD as a function of distance up to a distance of 20 µm. In addition, CD degradation was observed at distances not far (< 5 µm) from the open area. In a 60-nm neighborhood of the open area, an 8-nm variation in CD appeared up to the distance at which the CD leveled off. When the influences of resist blur and flare on patterns was taken into account in the calculation, it was found that aerial simulations based on a rigorous 3D model of a mask structure matched the experimental results. These results yield the appropriate mask resizing and the range in which flare has an influence, which is needed for FVC. This research was supported in part by NEDO.

Proceedings Article | 16 November 2007 Paper

Paper

Impact of mask absorber properties on printability in EUV lithography

Takashi Kamo, Toshihiko Tanaka, Hajime Aoyama, Osamu Suga

Proceedings Volume 6730, 673017 (2007) https://doi.org/10.1117/12.746550

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet lithography, Electroluminescence, Tantalum, Extreme ultraviolet, Lithography, Germanium, Chromium, Refractive index

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Proceedings Article | 15 May 2007 Paper

Paper

Development of a novel EUV mask protection engineering tool and mask handling techniques

Kazuya Ota, Hiroyoshi Kubo, Osamu Suga, Youichi Usui, Mitsuaki Amemiya, Tadahiko Takikawa, Takao Taguchi, Takashi Kamono

Proceedings Volume 6607, 66073G (2007) https://doi.org/10.1117/12.729035

KEYWORDS: Particles, Photomasks, Pellicles, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Atmospheric particles, Contamination, Quartz, Protactinium

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Proceedings Article | 11 May 2007 Paper

Paper

Mask quality assurance in cleaning for haze elimination using flexible mask specifications

Hidefumi Mukai, Tomohiro Tsutsui, Kyo Otsubo, Shinji Yamaguchi, Hiromitsu Mashita, Hiromitsu Hashimoto, Takashi Kamo, Osamu Ikenaga, Yukiyasu Arisawa, Toshiya Kotani

Proceedings Volume 6607, 660708 (2007) https://doi.org/10.1117/12.728921

KEYWORDS: Photomasks, Lithography, Air contamination, Transmittance, Semiconducting wafers, Critical dimension metrology, Semiconductors, Computer simulations, Scanning electron microscopy, Manufacturing

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Proceedings Article | 20 March 2007 Paper

Paper

Development of EUV mask handling technology at MIRAI-Selete

Yoichi Usui, Takashi Kamono, Hiroyoshi Kubo, Takao Taguchi, Kazuya Ota, Mitsuaki Amemiya, Osamu Suga, Tadahiko Takikawa

Proceedings Volume 6517, 65171Z (2007) https://doi.org/10.1117/12.711317

KEYWORDS: Photomasks, Particles, Extreme ultraviolet, Inspection, Pellicles, Interferometers, Defect detection, Time metrology, Laser applications, Manufacturing

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Proceedings Article | 17 May 1994 Paper

Paper

Optimization of optical properties for single-layer halftone masks

Shinichi Ito, Hideya Miyazaki, Hiroaki Hazama, Kenji Hayashi, Ichiro Mori, Fumiaki Shigemitsu, Hiroyuki Sato, Takashi Kamo

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175486

KEYWORDS: Photomasks, Optical properties, Transmittance, Reflection, Phase shifts, Quartz, Halftones, Refractive index, Semiconductors, Silicon

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Showing 5 of 41 publications

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