Mr. Emil Schmitt-Weaver Profile

Emil Schmitt-Weaver

Principal Development Engineer at ASML Netherlands

SPIE Involvement:

Author

Area of Expertise:

Metrology , Matlab , Photolithography , Simulations

Publications (13)

Proceedings Article | 20 March 2019 Paper

Holistic feedforward control for the 5 nm logic node and beyond

Henry Megens, Ralph Brinkhof, Igor Aarts, Haico Kok, Leendertjan Karssemeijer, Gijs ten Haaf, Shawn Lee, Daan Slotboom, Chris de Ruiter, Irina Lyulina, Simon Huisman, Stefan Keij, Evert Mos, Wim Tel, Manouk Rijpstra, Emil Schmitt-Weaver, Kaustuve Bhattacharyya, Robert Socha, Boris Menchtchikov, Michael Kubis, Jan Mulkens

Proceedings Volume 10961, 109610K (2019) https://doi.org/10.1117/12.2515449

KEYWORDS: Lithographic process control, Semiconducting wafers, Optical alignment, Overlay metrology, Sensors, Distortion, Scanners, Logic, Metrology, Process control

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Proceedings Article | 20 March 2019 Presentation + Paper

Pairing wafer leveling metrology from a lithographic apparatus with deep learning to enable cost effective dense wafer alignment metrology

Emil Schmitt-Weaver, Kaustuve Bhattacharyya

Proceedings Volume 10961, 1096109 (2019) https://doi.org/10.1117/12.2514455

KEYWORDS: Optical alignment, Semiconducting wafers, Metrology, Overlay metrology, Performance modeling, Deconvolution, Lithography, Wafer testing, Spatial frequencies, Neodymium

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Proceedings Article | 20 March 2018 Presentation + Paper

Smart overlay metrology pairing adaptive deep learning with the physics-based models used by a lithographic apparatus

Chan Hwang, Seung Yoon Lee, SeungHwa Oh, Emil Schmitt-Weaver, Jeonghyun Park, Daniel Park, Mohamed El Kodadi, Kaustuve Bhattacharyya

Proceedings Volume 10587, 105870B (2018) https://doi.org/10.1117/12.2297513

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Data modeling, Lithography, Optical alignment, Instrument modeling, Physics, Computing systems, Nanofabrication

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Proceedings Article | 28 March 2017 Presentation + Paper

Computational overlay metrology with adaptive data analytics

Emil Schmitt-Weaver, Venky Subramony, Zakir Ullah, Masazumi Matsunobu, Ravin Somasundaram, Joel Thomas, Linmiao Zhang, Klaus Thul, Kaustuve Bhattacharyya, Ronald Goossens, Cees Lambregts, Wim Tel, Chris de Ruiter

Proceedings Volume 10145, 101450V (2017) https://doi.org/10.1117/12.2258039

KEYWORDS: Semiconducting wafers, Metrology, Lithography, Overlay metrology, Analytics, Process control, Optical lithography, Semiconductors, Optical alignment, Contamination, Sensors, Neural networks, Data modeling

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Proceedings Article | 25 March 2016 Paper

Holistic overlay control for multi-patterning process layers at the 10nm and 7nm nodes

Leon Verstappen, Evert Mos, Peter Wardenier, Henry Megens, Emil Schmitt-Weaver, Kaustuve Bhattacharyya, Omer Adam, Grzegorz Grzela, Joost van Heijst, Lotte Willems, Jochem Wildenberg, Velislava Ignatova, Albert Chen, Frank Elich, Bijoy Rajasekharan, Lydia Vergaij-Huizer, Brian Lewis, Marc Kea, Jan Mulkens

Proceedings Volume 9778, 97781Y (2016) https://doi.org/10.1117/12.2230390

KEYWORDS: Process control, Overlay metrology, Process modeling, Semiconducting wafers, Metrology, Scanners, Target detection, Lithium, Optical alignment, Time metrology

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Multi-patterning lithography at the 10-nm and 7-nm nodes is driving the allowed overlay error down to extreme low values. Advanced high order overlay correction schemes are needed to control the process variability. Additionally the increase of the number of split layers results in an exponential increase of metrology complexity of the total overlay and alignment tree. At the same time, the process stack includes more hard-mask steps and becomes more and more complex, with as consequence that the setup and verification of the overlay metrology recipe becomes more critical. All of the above require a holistic approach that addresses total overlay optimization from process design to process setup and control in volume manufacturing. In this paper we will present the holistic overlay control flow designed for 10-nm and 7-nm nodes and illustrate the achievable ultimate overlay performance for a logic and DRAM use case. As figure 1 illustrates we will explain the details of the steps in the holistic flow. Overlay accuracy is the driver for target design and metrology tool optimization like wavelength and polarization. We will show that it is essential to include processing effects like etching and CMP which can result in a physical asymmetry of the bottom grating of diffraction based overlay targets. We will introduce a new method to create a reference overlay map, based on metrology data using multiple wavelengths and polarization settings. A similar approach is developed for the wafer alignment step. The overlay fingerprint correction using linear or high order correction per exposure (CPE) has a large amount of parameters. It is critical to balance the metrology noise with the ultimate correction model and the related metrology sampling scheme. Similar approach is needed for the wafer align step. Both for overlay control as well as alignment we have developed methods which include efficient use of metrology time, available for an in the litho-cluster integrated metrology use. These methods include a novel set models that efficiently describe different process fingerprints. We will explain the methods and show the benefits for logic and DRAM use cases.

Proceedings Article | 19 March 2015 Paper

Virtual overlay metrology for fault detection supported with integrated metrology and machine learning

Hong-Goo Lee, Emil Schmitt-Weaver, Min-Suk Kim, Sang-Jun Han, Myoung-Soo Kim, Won-Taik Kwon, Sung-Ki Park, Kevin Ryan, Thomas Theeuwes, Kyu-Tae Sun, Young-Wan Lim, Daan Slotboom, Michael Kubis, Jens Staecker

Proceedings Volume 9424, 94241T (2015) https://doi.org/10.1117/12.2085475

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Wafer testing, Machine learning, Neural networks, Data modeling, Optical alignment, Scanners, Process engineering

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Proceedings Article | 2 April 2014 Paper

Overlay improvements using a real time machine learning algorithm

Emil Schmitt-Weaver, Michael Kubis, Wolfgang Henke, Daan Slotboom, Tom Hoogenboom, Jan Mulkens, Martyn Coogans, Peter ten Berge, Dick Verkleij, Frank van de Mast

Proceedings Volume 9050, 90501S (2014) https://doi.org/10.1117/12.2046914

KEYWORDS: Overlay metrology, Semiconducting wafers, Machine learning, Metrology, Scanners, Sensors, Control systems, Optical alignment, Time metrology, Neural networks

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Proceedings Article | 1 April 2009 Paper

Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes

Steven Holmes, Chiew-Seng Koay, Karen Petrillo, Kuang-Jung Chen, Matthew Colburn, Jason Cantone, Kenichi Ueda, Andrew Metz, Shannon Dunn, Youri van Dommelen, Michael Crouse, Judy Galloway, Emil Schmitt-Weaver, Aiquin Jiang, Robert Routh, Cherry Tang, Mark Slezak, Sumanth Kini, Tony DiBiase

Proceedings Volume 7273, 727305 (2009) https://doi.org/10.1117/12.828483

KEYWORDS: Overlay metrology, Semiconducting wafers, Double patterning technology, Lithography, Semiconductors, Defect inspection, Scanning electron microscopy, Logic, Polymers, Photomasks

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SPIE Journal Paper | 1 January 2009

Litho-only double patterning approaches: positive–negative versus positive–positive tone

Michael Crouse, Ryusuke Uchida, Youri van Dommelen, Tomoyuki Ando, Emil Schmitt-Weaver, Masaru Takeshita, Shunder Wu, Robert Routh

JM3, Vol. 8, Issue 01, 011006, (January 2009) https://doi.org/10.1117/12.10.1117/1.3042219

KEYWORDS: Double patterning technology, Image processing, Nanoimprint lithography, Critical dimension metrology, Photoresist processing, Printing, Reticles, Cadmium, Lithography, Line width roughness

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Proceedings Article | 26 March 2008 Paper

The use of EUV lithography to produce demonstration devices

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim, Harry Levinson, Sarah McGowan, Uzodinma Okoroanyanwu, Rolf Seltmann, Cyrus Tabery, Anna Tchikoulaeva, Tom Wallow, Obert Wood, John Arnold, Don Canaperi, Matthew Colburn, Kurt Kimmel, Chiew-Seng Koay, Erin Mclellan, Dave Medeiros, Satyavolu Papa Rao, Karen Petrillo, Yunpeng Yin, Hiroyuki Mizuno, Sander Bouten, Michael Crouse, Andre van Dijk, Youri van Dommelen, Judy Galloway, Sang-In Han, Bart Kessels, Brian Lee, Sjoerd Lok, Brian Niekrewicz, Bill Pierson, Robert Routh, Emil Schmit-Weaver, Kevin Cummings, James Word

Proceedings Volume 6921, 69210P (2008) https://doi.org/10.1117/12.772933

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Transistors, Extreme ultraviolet, Optical proximity correction, Photoresist processing, Etching, Metals, Scanners

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Proceedings Article | 7 March 2008 Paper

Imaging performance optimization for hyper-NA scanner systems in high volume production

Mark van de Kerkhof, Eelco van Setten, Andre Engelen, Vincent Plachecki, Hua-yu Liu, Emil Schmitt-Weaver, Wilbert Rooijakkers, Klaus Simon

Proceedings Volume 6924, 69241W (2008) https://doi.org/10.1117/12.773260

KEYWORDS: Scanners, Reticles, Semiconducting wafers, Critical dimension metrology, Manufacturing, Lithography, Etching, Photomasks, Imaging systems, Optimization (mathematics)

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Proceedings Article | 30 October 2007 Paper

Polarization-induced astigmatism caused by topographic masks

Johannes Ruoff, Jens Timo Neumann, Emil Schmitt-Weaver, Eelco van Setten, Nicolas le Masson, Chris Progler, Bernd Geh

Proceedings Volume 6730, 67301T (2007) https://doi.org/10.1117/12.747039

KEYWORDS: Diffraction, Polarization, Photomasks, Monochromatic aberrations, Binary data, Birefringence, Electromagnetism, Chromium, Commercial off the shelf technology, Reticles

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Proceedings Article | 26 March 2007 Paper

The impact of projection lens polarization properties on lithographic process at hyper-NA

Bernd Geh, Johannes Ruoff, Jörg Zimmermann, Paul Gräupner, Michael Totzeck, Markus Mengel, Uwe Hempelmann, Emil Schmitt-Weaver

Proceedings Volume 6520, 65200F (2007) https://doi.org/10.1117/12.722317

KEYWORDS: Polarization, Wave plates, Resolution enhancement technologies, Polarizers, Birefringence, Optical components, Apodization, Lithography, Matrices, Optical proximity correction

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Showing 5 of 13 publications

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