Dr. Gregory R. McIntyre
Director, Advanced Patterning Dept at IMEC
SPIE Involvement:
Author | Instructor
Publications (59)

PROCEEDINGS ARTICLE | April 26, 2017
Proc. SPIE. 10148, Design-Process-Technology Co-optimization for Manufacturability XI
KEYWORDS: Logic, Optical lithography, Etching, Metals, Photomasks, Extreme ultraviolet, Semiconductor manufacturing, Computational lithography, Optical proximity correction, SRAF

PROCEEDINGS ARTICLE | March 24, 2017
Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII
KEYWORDS: Lithography, Logic, Optical lithography, Etching, Metals, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Double patterning technology, Critical dimension metrology, Semiconducting wafers, Stochastic processes, System on a chip, Back end of line

PROCEEDINGS ARTICLE | March 24, 2017
Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII
KEYWORDS: Logic, Optical lithography, Etching, Metals, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Tin, Back end of line

PROCEEDINGS ARTICLE | March 24, 2017
Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII
KEYWORDS: Reticles, Optical lithography, Calibration, Metals, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Optical proximity correction, SRAF, Semiconducting wafers

PROCEEDINGS ARTICLE | March 28, 2016
Proc. SPIE. 9781, Design-Process-Technology Co-optimization for Manufacturability X
KEYWORDS: Optical design, Logic, Optical lithography, Metals, Copper, Resistance, Capacitance, Photomasks, Extreme ultraviolet, Semiconducting wafers

PROCEEDINGS ARTICLE | March 18, 2015
Proc. SPIE. 9427, Design-Process-Technology Co-optimization for Manufacturability IX
KEYWORDS: Lithography, Optical lithography, Metals, Manufacturing, Scanning electron microscopy, Capacitance, Photomasks, Optical proximity correction, Semiconducting wafers, Standards development

Showing 5 of 59 publications
Course Instructor
SC779: Polarization for Lithographers
The advent of ultra high numerical aperture (NA) systems enabled by immersion lithography has quickly brought polarization toward the top of the lithographer's list of concerns. A high index liquid between the resist and the last lens element allows better resolution by enabling larger angles of incidence, and thus more diffraction energy to couple into the resist. However various polarizing effects can become severe with these large angles of incidence. Most notably contrast from the TM component drops to near or below zero. Thus, the engineering of polarization states is becoming a necessary resolution enhancement technique. Consequently, understanding and controlling polarization throughout all components of the optical system become critical. This course provides the lithographer a basic knowledge of polarization and its application to high-NA imaging. After an introduction to the concept of polarization and the various ways it can be represented, both the benefits and limitations of its application to lithography are discussed. The polarizing effects of each component of the optical system are addressed, offering an understanding of their ultimate impact on imaging.
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