PROCEEDINGS VOLUME 3412
PHOTOMASK JAPAN '98 SYMPOSIUM ON PHOTOMASK AND X-RAY MASK TECHNOLOGY V | 9-10 APRIL 1998
Photomask and X-Ray Mask Technology V
PHOTOMASK JAPAN '98 SYMPOSIUM ON PHOTOMASK AND X-RAY MASK TECHNOLOGY V
9-10 April 1998
Kawasaki City, Japan
Device Trends
Proc. SPIE 3412, Logic device trend: impact on mask technology, 0000 (1 September 1998); doi: 10.1117/12.328795
Proc. SPIE 3412, Impact on mask technology from the viewpoint of DRAM trend, 0000 (1 September 1998); doi: 10.1117/12.328805
Equipment
Proc. SPIE 3412, Further advances in electron-beam pattern generation technology for 180-nm masks, 0000 (1 September 1998); doi: 10.1117/12.328815
Proc. SPIE 3412, Development of a next-generation e-beam lithography system for 1-Gb DRAM masks, 0000 (1 September 1998); doi: 10.1117/12.328826
X-Ray Mask
Proc. SPIE 3412, Present status of x-ray lithography, 0000 (1 September 1998); doi: 10.1117/12.328836
Proc. SPIE 3412, Status of x-ray mask development at the IBM Advanced Mask Facility, 0000 (1 September 1998); doi: 10.1117/12.328846
Proc. SPIE 3412, Etching characteristics of a chromium-nitride hardmask for x-ray mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328855
Advanced Mask Fabrication Process
Proc. SPIE 3412, Revised SIA road map for mask technology, 0000 (1 September 1998); doi: 10.1117/12.328862
Proc. SPIE 3412, Application of dry etching to 1-Gb DRAM mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328863
Proc. SPIE 3412, Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-um-generation advanced mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328796
Proc. SPIE 3412, Comparison of etching methods for subquarter-micron-rule mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328797
Proc. SPIE 3412, Enhanced lithography CoO model: considerations for advanced mask, 0000 (1 September 1998); doi: 10.1117/12.328798
Proc. SPIE 3412, Process optimization for mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328799
Proc. SPIE 3412, Chemical-amplification positive-resist design for 0.18-um reticle fabrication using the 50-kV HL-800M electron-beam system, 0000 (1 September 1998); doi: 10.1117/12.328800
Proc. SPIE 3412, Possibility of a spin cup method, 0000 (1 September 1998); doi: 10.1117/12.328801
Proc. SPIE 3412, Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 um, 0000 (1 September 1998); doi: 10.1117/12.328802
Equipment
Proc. SPIE 3412, New flatness measurement instrument for 230-mm lapped and polished photomasks, 0000 (1 September 1998); doi: 10.1117/12.328803
Proc. SPIE 3412, Large-glass reticle writer: exposure strategy and mask handling, 0000 (1 September 1998); doi: 10.1117/12.328804
Proc. SPIE 3412, High-performance and stability reticle writing system HL-800M, 0000 (1 September 1998); doi: 10.1117/12.328806
Proc. SPIE 3412, Performance of the ALTA 3500 scanned-laser mask lithography system, 0000 (1 September 1998); doi: 10.1117/12.328807
Proc. SPIE 3412, Development of a fast beam-blanking system, 0000 (1 September 1998); doi: 10.1117/12.328808
X-Ray Mask
Proc. SPIE 3412, Improving the measurement accuracy of pattern width and position of x-ray masks, 0000 (1 September 1998); doi: 10.1117/12.328809
Advanced Mask Fabrication Process
Proc. SPIE 3412, ICP quartz etch uniformity improvement for phase-shift mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328810
Proc. SPIE 3412, High-density plasma dry etch for DUV attenuated phase-shifting masks, 0000 (1 September 1998); doi: 10.1117/12.328811
Proc. SPIE 3412, Two-step etching process for small-size pattern, 0000 (1 September 1998); doi: 10.1117/12.328812
Proc. SPIE 3412, Development of a high-performance e-beam resist suitable for advanced mask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328813
Proc. SPIE 3412, Application of dry etching process on high-end Cr photomasks, 0000 (1 September 1998); doi: 10.1117/12.328814
Proc. SPIE 3412, Development of a multi-FPGA netlist partitioner and a general-purpose graph partitioning system, 0000 (1 September 1998); doi: 10.1117/12.328816
Proc. SPIE 3412, Formal specification and verification of hardware designs, 0000 (1 September 1998); doi: 10.1117/12.328817
Proc. SPIE 3412, Development methods for chemical amplification resist, 0000 (1 September 1998); doi: 10.1117/12.328818
Proc. SPIE 3412, Performance of a chemically amplified positive resist for next-generation photomask fabrication, 0000 (1 September 1998); doi: 10.1117/12.328819
Proc. SPIE 3412, Fine-pattern process with negative tone resist, 0000 (1 September 1998); doi: 10.1117/12.328820
Proc. SPIE 3412, Optimization of ZEN4100(2), 0000 (1 September 1998); doi: 10.1117/12.328821
Proc. SPIE 3412, Preliminary evaluation results of 895i and iP1700 replacement resist for advanced laser reticle fabrication, 0000 (1 September 1998); doi: 10.1117/12.328822
Proc. SPIE 3412, Deflection error due to charge-up effect of reticle substrate, 0000 (1 September 1998); doi: 10.1117/12.328823
Proc. SPIE 3412, Subresolution assist feature masks for 0.2-um window pattern formation, 0000 (1 September 1998); doi: 10.1117/12.328824
Proc. SPIE 3412, Mask CD quality assurance specifications for 0.25-um devices with a practical lithography window, 0000 (1 September 1998); doi: 10.1117/12.328825
Metrology, Cleaning, and Pelliclization
Proc. SPIE 3412, New detailed CD measurement method by scanning confocal laser microscope, 0000 (1 September 1998); doi: 10.1117/12.328827
Proc. SPIE 3412, New distortion metrology using reticle coordinate error, 0000 (1 September 1998); doi: 10.1117/12.328828
Proc. SPIE 3412, Pellicle-induced distortions on photomasks, 0000 (1 September 1998); doi: 10.1117/12.328829
Proc. SPIE 3412, Ultrafine mask cleaning technology using ultraviolet irradiation, 0000 (1 September 1998); doi: 10.1117/12.328830
Inspection, Repair, and Phase-Shift Mask
Proc. SPIE 3412, Detection of CD error caused by multipass writing method, 0000 (1 September 1998); doi: 10.1117/12.328831
Proc. SPIE 3412, Defect data analysis for reticle inspection, 0000 (1 September 1998); doi: 10.1117/12.328832
Proc. SPIE 3412, Evaluation results of a new inspection algorithm, 0000 (1 September 1998); doi: 10.1117/12.328833
Proc. SPIE 3412, Gray map reference pattern generator of a die-to-database mask inspection system for 256-Mb and 1-Gb DRAMs, 0000 (1 September 1998); doi: 10.1117/12.328834
Proc. SPIE 3412, Use of line-width error detection for quality control in reticle fabrication, 0000 (1 September 1998); doi: 10.1117/12.328835
Proc. SPIE 3412, Toward 150-nm defect detection capability, 0000 (1 September 1998); doi: 10.1117/12.328837
Proc. SPIE 3412, High-resolution UV wavelength reticle inspection, 0000 (1 September 1998); doi: 10.1117/12.328838
Proc. SPIE 3412, Printability of backside reticle defects, 0000 (1 September 1998); doi: 10.1117/12.328839
Proc. SPIE 3412, Modified particle detection method for reticle/mask particle detection system, 0000 (1 September 1998); doi: 10.1117/12.328840
Proc. SPIE 3412, Current focused-ion-beam repair strategies for opaque defects and clear defects on advanced phase-shifting masks, 0000 (1 September 1998); doi: 10.1117/12.328841
Proc. SPIE 3412, High-transmittance rim-type attenuated phase-shift masks for sub-0.2-um hole patterns, 0000 (1 September 1998); doi: 10.1117/12.328842
Proc. SPIE 3412, Optimization of Zr-Si compound films for attenuated PSM, 0000 (1 September 1998); doi: 10.1117/12.328843
Special Session "Lithography in the 21st Century: Impact on Mask Technology"
Proc. SPIE 3412, Present status of ArF lithography development and mask technology, 0000 (1 September 1998); doi: 10.1117/12.328844
Proc. SPIE 3412, Present status and technical issues of x-ray lithography, 0000 (1 September 1998); doi: 10.1117/12.328845
Proc. SPIE 3412, Fabrication and commercialization of scalpel masks, 0000 (1 September 1998); doi: 10.1117/12.328847
Proc. SPIE 3412, Mask technology of extreme-ultraviolet lithography, 0000 (1 September 1998); doi: 10.1117/12.328848
Proc. SPIE 3412, Ion projection lithography, 0000 (1 September 1998); doi: 10.1117/12.328849