PROCEEDINGS VOLUME 4345
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | FEB 25 - MAR 2 2001
Advances in Resist Technology and Processing XVIII
Proceedings Volume 4345 is from: Logo
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
Feb 25 - Mar 2 2001
Santa Clara, CA, United States
Fundamental Studies I
Proc. SPIE 4345, Experimental approaches for assessing interfacial behavior of polymer films during dissolution in aqueous base, 0000 (24 August 2001); doi: 10.1117/12.436809
Proc. SPIE 4345, Mechanistic understanding of line-end shortening, 0000 (24 August 2001); doi: 10.1117/12.436844
Proc. SPIE 4345, Image collapse issues in photoresist, 0000 (24 August 2001); doi: 10.1117/12.436855
Fundamental Studies II
Proc. SPIE 4345, Optimum tone for various feature types: positive versus negative, 0000 (24 August 2001); doi: 10.1117/12.436866
Proc. SPIE 4345, Understanding nonlinear dissolution rates in photoresists, 0000 (24 August 2001); doi: 10.1117/12.436876
ArF Materials I
Proc. SPIE 4345, IBM 193-nm bilayer resist: materials, lithographic performance, and optimization, 0000 (24 August 2001); doi: 10.1117/12.436892
Proc. SPIE 4345, ArF negative resist system using androsterone structure with delta-hydroxy acid for 100-nm phase shifting lithography, 0000 (24 August 2001); doi: 10.1117/12.436901
ArF Materials II
Proc. SPIE 4345, Base additives for use in a single layer 193-nm resist based upon poly(norbornene/maleic anhydride/acrylic acid/tert-butyl acrylate), 0000 (24 August 2001); doi: 10.1117/12.436912
Proc. SPIE 4345, 193-nm single-layer resists based on advanced materials, 0000 (24 August 2001); doi: 10.1117/12.436817
Proc. SPIE 4345, Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs, 0000 (24 August 2001); doi: 10.1117/12.436828
Proc. SPIE 4345, Comparison of acid-generating efficiencies in 248 and 193-nm photoresists, 0000 (24 August 2001); doi: 10.1117/12.436838
Poster Session
Proc. SPIE 4345, 193 SLR system based on COMA/acryl hybrid system, 0000 (24 August 2001); doi: 10.1117/12.436839
Processing and Examination I
Proc. SPIE 4345, Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone, 0000 (24 August 2001); doi: 10.1117/12.436840
Proc. SPIE 4345, Thermal properties of COMA materials, 0000 (24 August 2001); doi: 10.1117/12.436841
Proc. SPIE 4345, Modification of 193-nm (ArF) photoresists by electron beam stabilization, 0000 (24 August 2001); doi: 10.1117/12.436842
Proc. SPIE 4345, Novel high-performance ArF resist for sub-100-nm lithography, 0000 (24 August 2001); doi: 10.1117/12.436843
Proc. SPIE 4345, Novel hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate for 193-nm resist compositions, 0000 (24 August 2001); doi: 10.1117/12.436845
Processing and Examination II
Proc. SPIE 4345, Optimization of ArF resist for 100-nm node: DOE and fine-tuning of basic platform, 0000 (24 August 2001); doi: 10.1117/12.436846
Proc. SPIE 4345, CD changes of 193-nm resists during SEM measurement, 0000 (24 August 2001); doi: 10.1117/12.436847
Proc. SPIE 4345, Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement, 0000 (24 August 2001); doi: 10.1117/12.436848
Proc. SPIE 4345, Process optimization for sub-100-nm gate patterns using phase edge lithography, 0000 (24 August 2001); doi: 10.1117/12.436849
Poster Session
Proc. SPIE 4345, 193-nm contact photoresist reflow feasibility study, 0000 (24 August 2001); doi: 10.1117/12.436850
KrF Processing and Materials
Proc. SPIE 4345, Development of resists for thermal flow process applicable to mass production, 0000 (24 August 2001); doi: 10.1117/12.436851
Proc. SPIE 4345, Novel routes toward sub-70-nm contact windows by using new KrF photoresist, 0000 (24 August 2001); doi: 10.1117/12.436852
Proc. SPIE 4345, High resolution patterning in chemically amplified resists: the effect of film thickness, 0000 (24 August 2001); doi: 10.1117/12.436853
Proc. SPIE 4345, Resist composition effects on ultimate resolution of negative-tone chemically amplified resists, 0000 (24 August 2001); doi: 10.1117/12.436854
Proc. SPIE 4345, Integration of ultrathin resist processes into MPU IC manufacturing flows, 0000 (24 August 2001); doi: 10.1117/12.436856
VUV Section I
Proc. SPIE 4345, Polymer design for 157-nm chemically amplified resists, 0000 (24 August 2001); doi: 10.1117/12.436857
Proc. SPIE 4345, Experimental VUV absorbance study of fluorine-functionalized polystyrenes, 0000 (24 August 2001); doi: 10.1117/12.436858
Proc. SPIE 4345, High-resolution fluorocarbon-based resist for 157-nm lithography, 0000 (24 August 2001); doi: 10.1117/12.436859
Proc. SPIE 4345, Encapsulated inorganic resist technology applied to 157-nm lithography, 0000 (24 August 2001); doi: 10.1117/12.436860
Proc. SPIE 4345, Silicon-containing resists for 157-nm applications, 0000 (24 August 2001); doi: 10.1117/12.436861
Poster Session
Proc. SPIE 4345, New polymer for 157-nm single-layer resist based on fluorine-containing acryl copolymer, 0000 (24 August 2001); doi: 10.1117/12.436862
VUV Section I
Proc. SPIE 4345, Characterization of thin and ultrathin polymer and resist films, 0000 (24 August 2001); doi: 10.1117/12.436863
VUV Section II
Proc. SPIE 4345, Perfect photoresist for 157nm imaging, 0000 (24 August 2001); doi: 10.1117/12.436864
Proc. SPIE 4345, Transparent resins for 157-nm lithography, 0000 (24 August 2001); doi: 10.1117/12.436865
Proc. SPIE 4345, Application of top surface imaging process to 157-nm lithography, 0000 (24 August 2001); doi: 10.1117/12.436867
Proc. SPIE 4345, Resist materials for 157-nm lithography, 0000 (24 August 2001); doi: 10.1117/12.436868
Proc. SPIE 4345, Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography, 0000 (24 August 2001); doi: 10.1117/12.436869
VUV Section III
Proc. SPIE 4345, Theoretical calculations of photoabsorption of several alicyclic molecules in the vacuum ultraviolet region, 0000 (24 August 2001); doi: 10.1117/12.436871
Proc. SPIE 4345, Top surface imaging at 157-nm, 0000 (24 August 2001); doi: 10.1117/12.436872
Proc. SPIE 4345, Characterization of new aromatic polymers for 157-nm photoresist applications, 0000 (24 August 2001); doi: 10.1117/12.436873
Proc. SPIE 4345, 157-nm imaging using thick single-layer resists, 0000 (24 August 2001); doi: 10.1117/12.436874
Poster Session
Proc. SPIE 4345, Effect of development process time on the surface of photoresist with various chemical compositions investigated by atomic force microscopy, 0000 (24 August 2001); doi: 10.1117/12.436875
Proc. SPIE 4345, Continuous metal removal technique for resist resins, 0000 (24 August 2001); doi: 10.1117/12.436877
Proc. SPIE 4345, Resist rehydration during thick film processing, 0000 (24 August 2001); doi: 10.1117/12.436878
Proc. SPIE 4345, Development of an edge bead remover (EBR) for thick films, 0000 (24 August 2001); doi: 10.1117/12.436879
Proc. SPIE 4345, Novel photoacid generators for chemically amplified resists with g-line, i-line, and DUV exposure, 0000 (24 August 2001); doi: 10.1117/12.436880
Proc. SPIE 4345, Spin coating properties of SU-8 thick-layer photoresist, 0000 (24 August 2001); doi: 10.1117/12.436881
Proc. SPIE 4345, Reduction of internal stress in a SU-8-like negative tone photoresist for MEMS applications by chemical modification, 0000 (24 August 2001); doi: 10.1117/12.436882
Proc. SPIE 4345, Photolithographic evaluation of various photoresist materials for mask-making applications, 0000 (24 August 2001); doi: 10.1117/12.436883
Proc. SPIE 4345, Novel CA resists with photoacid generator in polymer chain, 0000 (24 August 2001); doi: 10.1117/12.436884
Proc. SPIE 4345, Investigation on dissolution rate effect of newly prepared polystyrene copolymer on the profiles of DUV resists, 0000 (24 August 2001); doi: 10.1117/12.436885
Proc. SPIE 4345, Novel deep UV photoresist with thermally crosslinkable photoacid generator, 0000 (24 August 2001); doi: 10.1117/12.436886
Proc. SPIE 4345, Rational design of bleachable nonchemically amplified DUV photoactive compounds, 0000 (24 August 2001); doi: 10.1117/12.436887