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PSCAR utilizes an area-selective photosensitization mechanism to generate more acid in the exposed areas during a UV exposure. PSCAR is an attempt to break the resolution, line-edge-roughness, and sensitivity trade-off (RLS trade-off) relationships that limit standard chemically amplified resists. The photosensitizer, which is generated in exposed area by a photoacid catalytic reaction, absorbs the UV exposure light selectively and generates additional acid in the exposed area only.
Material development and UV exposure uniformity are the key elements of PSCAR technology for semiconductor mass fabrication. This paper will review the approaches toward improvement of PSCAR resist process robustness. The chemistry’s EUV exposure cycle of learning results from experiments at imec will be discussed.
In our report at SPIE 2017, defect reduction was achieved using the latest rinse technology in the development process and in-film defectivity was improved with material dispense optimization on a 24 nm contact hole (CH) pattern. On the basis of the knowledge acquired from the previous evaluation, improvements have been taken a step further in this next evaluation. As a result, 96% of residue defect reduction and 42% of in -film particle defect reduction has been achieved by further rinse optimization and improvement of dispense system.
For the other aspect of yield improvement, CD uniformity control is one of the crucial factors. CD variations are comprised of several components such as wafer to wafer CD uniformity, field to field CD uniformity. To achieve CD uniformity target for manufacturing, we have optimized developing process with the latest technology. Then, 15% of field to field CD uniformity improvement and significant improvement of wafer to wafer CD uniformity are achieved.
Tokyo Electron Limited has focused its efforts in scaling many laboratory demonstrations to 300 mm wafers. Additionally, we have recognized that the use of DSA requires specific design considerations to create robust layouts. To this end, we have discussed the development of a DSA ecosystem that will make DSA a viable technology for our industry, and we have partnered with numerous companies to aid in the development of the ecosystem. This presentation will focus on our continuing role in developing the equipment required for DSA implementation specifically discussing defectivity reduction on flows for making line-space and hole patterns, etch transfer of DSA patterns into substrates of interest, and integration of DSA processes into larger patterning schemes.
With this larger CD starting point, the burden of shot noise changes significantly and the ability for higher speed resist formulations to be used is enabled. Further resist candidates that may have not met the resolution requirements for EUV can also be evaluated. This implies a completely different operational set-point for EUV resist chemistry where the relaxation of both LER and CD together combined, give the resist formulation space a new target when EUV is used as a SADP tool. Post processing mitigation of LWR is needed to attain the performance of the final 16nm half pitch target pattern to align with the industry needs.
If the original process flow at an 85W projected source power would run in the 50WPH range, then the flow proposed here would run in the <120WPH range. Although it is a double patterning technology, the proposed process still only requires a single pass through the EUV tool, This speed benefit can be used to offset the added costs associated with the double patterning process. This flow can then be shown to be an enabling approach for many EUV applications.
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