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Production aspects of 45nm immersion lithography defect monitoring using laser DUV inspection methodology
Optical through-focus technique that differentiates small changes in line width, line height, and sidewall angle for CD, overlay, and defect metrology applications
Controlled deposition of NIST-traceable nanoparticles as additional size standards for photomask applications
Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rate in a 45nm production environment
Defect inspection using a high-resolution pattern image obtained from multiple low-resolution images of the same pattern on an observed noisy SEM image
In-line inspection resistance mapping using quantitative measurement of voltage contrast in SEM images