PROCEEDINGS VOLUME 7969
SPIE ADVANCED LITHOGRAPHY | FEB 27 - MAR 3 2011
Extreme Ultraviolet (EUV) Lithography II
Proceedings Volume 7969 is from: Logo
SPIE ADVANCED LITHOGRAPHY
Feb 27 - Mar 3 2011
San Jose, California, United States
Front Matter
Proc. SPIE 7969, Front Matter: Volume 7969, 796901 (4 May 2011); doi: 10.1117/12.897483
Invited Session I
Proc. SPIE 7969, Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application, 796902 (26 March 2011); doi: 10.1117/12.879384
Proc. SPIE 7969, Modeling the transfer of line edge roughness from an EUV mask to the wafer, 796903 (26 March 2011); doi: 10.1117/12.881641
Proc. SPIE 7969, EUV secondary electron blur at the 22nm half pitch node, 796904 (25 March 2011); doi: 10.1117/12.881427
EUV I: Joint Session with Conference 7972
Proc. SPIE 7969, Development status of EUV resist materials and processing at Selete, 796905 (25 March 2011); doi: 10.1117/12.878432
Proc. SPIE 7969, Comprehensive EUV lithography model, 796906 (29 March 2011); doi: 10.1117/12.879766
Proc. SPIE 7969, Additive-loaded EUV photoresists: performance enhancement and the underlying physics, 796907 (29 March 2011); doi: 10.1117/12.881613
Sources
Proc. SPIE 7969, Gas-based spectral filter for mitigating 10.6 um radiation in CO2 laser produced plasma extreme ultraviolet sources, 796909 (29 March 2011); doi: 10.1117/12.879550
Proc. SPIE 7969, Cooled EUV collector optics for LPP and DPP sources, 79690A (29 March 2011); doi: 10.1117/12.876981
Proc. SPIE 7969, Enabling the 22nm node via grazing incidence collectors integrated into the DPP source for EUVL HVM, 79690B (29 March 2011); doi: 10.1117/12.879396
Proc. SPIE 7969, High-brightness LPP source for actinic mask inspection, 79690C (29 March 2011); doi: 10.1117/12.879786
Proc. SPIE 7969, Combined effects of pre-pulsing and target geometry on efficient EUV production from laser produced plasma experiments and modeling, 79690D (29 March 2011); doi: 10.1117/12.879517
Masks I
Proc. SPIE 7969, Replicated mask surface roughness effects on EUV lithographic patterning and line edge roughness, 79690E (29 March 2011); doi: 10.1117/12.881524
Proc. SPIE 7969, EUVL alternating phase shift mask, 79690G (5 April 2011); doi: 10.1117/12.884790
Proc. SPIE 7969, AIMS EUV: the actinic aerial image review platform for EUV masks, 79690H (5 April 2011); doi: 10.1117/12.879422
Proc. SPIE 7969, SEMATECH's infrastructure for defect metrology and failure analysis to support its EUV mask defect reduction program, 79690I (29 March 2011); doi: 10.1117/12.879466
Proc. SPIE 7969, Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection, 79690J (29 March 2011); doi: 10.1117/12.879551
Optics and Contamination
Proc. SPIE 7969, The NIST EUV facility for advanced photoresist qualification using the witness-sample test, 79690K (26 March 2011); doi: 10.1117/12.879519
Proc. SPIE 7969, Influence of environments on the footprint of particle contamination on EUV mask, 79690L (29 March 2011); doi: 10.1117/12.881608
Proc. SPIE 7969, Optics contamination studies in support of high-throughput EUV lithography tools, 79690M (26 March 2011); doi: 10.1117/12.879852
Proc. SPIE 7969, A simple modeling of carbon contamination on EUV exposure tools based on contamination experiments with synchrotron source, 79690N (6 April 2011); doi: 10.1117/12.879392
Tools and OPC
Proc. SPIE 7969, Development of EUV lithography tools at Nikon, 79690P (5 April 2011); doi: 10.1117/12.879305
Proc. SPIE 7969, Resolution capability of SFET with slit and dipole illumination, 79690Q (5 April 2011); doi: 10.1117/12.870332
Proc. SPIE 7969, The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch, 79690R (5 April 2011); doi: 10.1117/12.881573
Proc. SPIE 7969, Investigation of EUV tapeout flow issues, requirements, and options for volume manufacturing, 79690S (5 April 2011); doi: 10.1117/12.880230
Proc. SPIE 7969, EUV flare and proximity modeling and model-based correction, 79690T (5 April 2011); doi: 10.1117/12.879488
Proc. SPIE 7969, EUV OPC for 56nm metal pitch, 79690U (6 April 2011); doi: 10.1117/12.879931
Masks II
Proc. SPIE 7969, Phase defect printability and actinic dark-field mask blank inspection capability analyses, 79690V (6 April 2011); doi: 10.1117/12.879398
Proc. SPIE 7969, EUV masks under exposure: practical considerations, 79690W (6 April 2011); doi: 10.1117/12.880755
Proc. SPIE 7969, Towards defect free EUVL reticles: carbon and particle removal by single dry cleaning process and pattern repair by HIM, 79690X (7 April 2011); doi: 10.1117/12.879216
Proc. SPIE 7969, Feasibility of EUVL thin absorber mask for sub-32nm half pitch patterning, 79690Y (6 April 2011); doi: 10.1117/12.879371
Proc. SPIE 7969, Current status of EUV mask blanks and LTEM substrates defectivity and cleaning of blanks exposed in EUV ADT, 79690Z (6 April 2011); doi: 10.1117/12.880757
Proc. SPIE 7969, An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm, 796910 (6 April 2011); doi: 10.1117/12.881651
EUV II: Joint Session with Conference 7972
Proc. SPIE 7969, Understanding EUV resist dissolution characteristics and its impact to RLS limitations, 796911 (7 April 2011); doi: 10.1117/12.879449
Proc. SPIE 7969, Impact of polymerization process on OOB on lithographic performance of a EUV resist, 796912 (7 April 2011); doi: 10.1117/12.879487
Proc. SPIE 7969, Line width roughness control and pattern collapse solutions for EUV patterning, 796913 (7 April 2011); doi: 10.1117/12.879513
Resist
Proc. SPIE 7969, Out of band radiation effects on resist patterning, 796914 (7 April 2011); doi: 10.1117/12.881161
Proc. SPIE 7969, Directly patterned inorganic hardmask for EUV lithography, 796915 (7 April 2011); doi: 10.1117/12.879542
Proc. SPIE 7969, CD uniformity improvement for EUV resists process: EUV resolution enhancement layer, 796916 (7 April 2011); doi: 10.1117/12.879791
Proc. SPIE 7969, Photoresist shrinkage effects at EUV, 796917 (8 April 2011); doi: 10.1117/12.879554
Proc. SPIE 7969, LWR improvement in EUV resist process, 796918 (7 April 2011); doi: 10.1117/12.879334
Proc. SPIE 7969, Stochastic exposure kinetics of EUV photoresists: a simulation study, 796919 (7 April 2011); doi: 10.1117/12.881066
Masks III
Proc. SPIE 7969, Modeling the EUV multilayer deposition process on EUV blanks, 79691A (7 April 2011); doi: 10.1117/12.879467
Proc. SPIE 7969, Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system, 79691B (7 April 2011); doi: 10.1117/12.879565
Proc. SPIE 7969, Development of new FIB technology for EUVL mask repair, 79691C (7 April 2011); doi: 10.1117/12.879609
Proc. SPIE 7969, Printability of buried mask defects in extreme UV lithography, 79691D (7 April 2011); doi: 10.1117/12.881583
Proc. SPIE 7969, Compensation for EUV multilayer defects within arbitrary layouts by absorber pattern modification, 79691E (7 April 2011); doi: 10.1117/12.879556
Invited Session II
Proc. SPIE 7969, EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100, 79691F (7 April 2011); doi: 10.1117/12.878603
Proc. SPIE 7969, Tin LDP source collector module (SoCoMo) ready for integration into Beta scanner, 79691G (7 April 2011); doi: 10.1117/12.879386
Devices
Proc. SPIE 7969, CD correction for half pitch 2x-nm on extreme ultraviolet lithography, 79691J (7 April 2011); doi: 10.1117/12.878672
Proc. SPIE 7969, Patterning challenges in setting up a 16nm node 6T-SRAM device using EUV lithography, 79691K (8 April 2011); doi: 10.1117/12.881690
Proc. SPIE 7969, Manufacturability of 2x-nm devices with EUV tool, 79691L (8 April 2011); doi: 10.1117/12.879333
Proc. SPIE 7969, Overlay progress in EUV lithography towards adoption for manufacturing, 79691M (8 April 2011); doi: 10.1117/12.881088