PROCEEDINGS VOLUME 4889
PHOTOMASK TECHNOLOGY 2002 | 30 SEPTEMBER - 4 OCTOBER 2002
22nd Annual BACUS Symposium on Photomask Technology
PHOTOMASK TECHNOLOGY 2002
30 September - 4 October 2002
Monterey, CA, United States
Introductory Paper
Proc. SPIE 4889, Mask industry assessment: 2002, 0000 (27 December 2002); doi: 10.1117/12.467389
Materials and Processes I
Proc. SPIE 4889, Back to square 9: a demonstration of 9-in. reticle capablilty, 0000 (27 December 2002); doi: 10.1117/12.467495
Proc. SPIE 4889, Process monitoring of etched fused silica phase-shift reticles, 0000 (27 December 2002); doi: 10.1117/12.468212
Proc. SPIE 4889, Sol-gel fabrication of high-quality photomask substrates, 0000 (27 December 2002); doi: 10.1117/12.468605
Proc. SPIE 4889, Comparison of endpoint methods in advanced photomask etch applications, 0000 (27 December 2002); doi: 10.1117/12.467749
Proc. SPIE 4889, Process bias control with thin Cr film blanks for 90-nm-node reticle fabrication, 0000 (27 December 2002); doi: 10.1117/12.467497
Data Preparation and Design
Proc. SPIE 4889, Compensation of long-range process effects on photomasks by design data correction, 0000 (27 December 2002); doi: 10.1117/12.467572
Proc. SPIE 4889, Enforcement of mask rule compliance in model-based OPC'ed layouts during data preparation, 0000 (27 December 2002); doi: 10.1117/12.467751
Proc. SPIE 4889, Integrating CD and lithographic process window analysis with mask data preparation for subwavelength ICs, 0000 (27 December 2002); doi: 10.1117/12.467847
Proc. SPIE 4889, Development of new stream format with GDSII upper compatibility and high compression rate, 0000 (27 December 2002); doi: 10.1117/12.467910
Proc. SPIE 4889, Automated flow for site definition and CD measurement with a SEM for use in mask production, 0000 (27 December 2002); doi: 10.1117/12.468082
Proc. SPIE 4889, GDS-based mask data preparation flow: data volume containment by hierarchical data processing, 0000 (27 December 2002); doi: 10.1117/12.468273
Proc. SPIE 4889, Automated management of photomask inspection, 0000 (27 December 2002); doi: 10.1117/12.467577
Proc. SPIE 4889, Anatomy of a universal data model, 0000 (27 December 2002); doi: 10.1117/12.469029
Materials and Processes II
Proc. SPIE 4889, Negative chemically amplified resist (nCAR) for DRAM mask fabrications, 0000 (27 December 2002); doi: 10.1117/12.467429
Pattern Generation
Proc. SPIE 4889, Advanced write tool effects on 100-nm node OPC, 0000 (27 December 2002); doi: 10.1117/12.467761
Proc. SPIE 4889, Resolution extensions in the Sigma7000 imaging pattern generator, 0000 (27 December 2002); doi: 10.1117/12.468623
Proc. SPIE 4889, Raster-shaped beam pattern generation for 70-nm photomask production, 0000 (27 December 2002); doi: 10.1117/12.468198
Proc. SPIE 4889, Comparison of DUV wafer and reticle lithography: What is the resolution limit?, 0000 (27 December 2002); doi: 10.1117/12.468094
Mask CD Error and Specifications
Proc. SPIE 4889, Flexible mask specifications, 0000 (27 December 2002); doi: 10.1117/12.469361
Proc. SPIE 4889, Analysis of the impact of reticle CD variations on the available process windows for a 100-nm CMOS process, 0000 (27 December 2002); doi: 10.1117/12.467915
Proc. SPIE 4889, Comprehensive approach to determining the specification for mask mean to target, 0000 (27 December 2002); doi: 10.1117/12.467479
Defects, Inspection, and Repair
Proc. SPIE 4889, Phase defect repair for the chromeless phase lithography (CPL) mask, 0000 (27 December 2002); doi: 10.1117/12.467486
Proc. SPIE 4889, Investigation of nanomachining as a technique for geometry reconstruction, 0000 (27 December 2002); doi: 10.1117/12.468275
Proc. SPIE 4889, Alternating phase-shift mask inspection through the use of phase contrast enhancement techniques, 0000 (27 December 2002); doi: 10.1117/12.468086
Proc. SPIE 4889, Inspecting alternating phase-shift masks by matching stepper conditions, 0000 (27 December 2002); doi: 10.1117/12.467781
Proc. SPIE 4889, Automated defect severity analysis for binary and PSM mask defects, 0000 (27 December 2002); doi: 10.1117/12.467436
Proc. SPIE 4889, PRIMADONNA: a system for automated defect disposition of production masks using wafer lithography simulation, 0000 (27 December 2002); doi: 10.1117/12.467768
Proc. SPIE 4889, Reticle defect printability: impact on yield and feedback to suppliers, 0000 (27 December 2002); doi: 10.1117/12.468087
Proc. SPIE 4889, Electron-beam-induced processes and their applicability to mask repair, 0000 (27 December 2002); doi: 10.1117/12.468200
Mask Metrology
Proc. SPIE 4889, Photomask dimensional metrology in the SEM: Has anything really changed?, 0000 (27 December 2002); doi: 10.1117/12.467760
Proc. SPIE 4889, Electrical dimension characterization of binary and alternating aperture phase-shifting masks, 0000 (27 December 2002); doi: 10.1117/12.467430
Proc. SPIE 4889, Reliable subnanometer repeatability for CD metrology in a reticle production environment, 0000 (27 December 2002); doi: 10.1117/12.468090
Proc. SPIE 4889, Calibration and long-term stability evaluation of photomask CD-SEM utilizing JQA standard, 0000 (27 December 2002); doi: 10.1117/12.468088
Proc. SPIE 4889, 2002 update on the SEMI Standards Mask Qualification Terminology Task Force, 0000 (27 December 2002); doi: 10.1117/12.467907
Proc. SPIE 4889, New NIST photomask linewidth standard, 0000 (27 December 2002); doi: 10.1117/12.467432
Proc. SPIE 4889, High-resolution photomask phase measurement tool, 0000 (27 December 2002); doi: 10.1117/12.467846
Proc. SPIE 4889, Modified shape from shading approach to SEM-based photoresist CD metrology, 0000 (27 December 2002); doi: 10.1117/12.467752
EUV Masks
Proc. SPIE 4889, Low-defect EUVL multilayers on standard-format mask blanks, 0000 (27 December 2002); doi: 10.1117/12.467478
Proc. SPIE 4889, Integration of antireflection coatings on EUV absorber stacks, 0000 (27 December 2002); doi: 10.1117/12.468104
Proc. SPIE 4889, High-performance 6-in. EUV mask blanks produced under real production conditions by ion-beam sputter deposition, 0000 (27 December 2002); doi: 10.1117/12.467578
Proc. SPIE 4889, Impact of EUV mask quality on optical inspection sensitivity, 0000 (27 December 2002); doi: 10.1117/12.467439
Proc. SPIE 4889, Evaluation of the capability of a multibeam confocal inspection system for inspection of EUVL mask blanks, 0000 (27 December 2002); doi: 10.1117/12.468199
Proc. SPIE 4889, Performance of repaired defects and attPSM in EUV multilayer masks, 0000 (27 December 2002); doi: 10.1117/12.467896
Proc. SPIE 4889, Recovery of Mo/Si-multilayer-coated LTEM substrate, 0000 (27 December 2002); doi: 10.1117/12.468106
Proc. SPIE 4889, EUVL square mask patterning with TaN absorber, 0000 (27 December 2002); doi: 10.1117/12.468102
Advanced Technology and NGL
Proc. SPIE 4889, PMJ 2002 Panel Discussion Review: Lithography strategy from 90- to 65-nm nodes -- ArF, F2, or EPL?, 0000 (27 December 2002); doi: 10.1117/12.467903
Proc. SPIE 4889, Porous silica frame for deep-UV lithography, 0000 (27 December 2002); doi: 10.1117/12.468604
Proc. SPIE 4889, Aerial image measurement system for 157-nm lithography, 0000 (27 December 2002); doi: 10.1117/12.467353
Wafer Fab Issues with Masks
Proc. SPIE 4889, Investigation of reticle defect formation at DUV lithography, 0000 (27 December 2002); doi: 10.1117/12.468211
Proc. SPIE 4889, Reticle defect management solutions for a wafer fab, 0000 (27 December 2002); doi: 10.1117/12.467850
Proc. SPIE 4889, Characterization of repairs to KrF 300-mm wafer printability for 0.13-um design rule with attenuated phase-shifting mask, 0000 (27 December 2002); doi: 10.1117/12.467314
Proc. SPIE 4889, Extended defect printability study for 100-nm design rule using 193-nm lithography, 0000 (27 December 2002); doi: 10.1117/12.467909
Resolution Enhancement Techniques (OPC/PSM)
Proc. SPIE 4889, Manufacturability evaluation of model-based OPC masks, 0000 (27 December 2002); doi: 10.1117/12.468093
Proc. SPIE 4889, Polarization contact: mask engineering, 0000 (27 December 2002); doi: 10.1117/12.467897
Proc. SPIE 4889, Alternatives to alternating phase-shift masks for 65 nm, 0000 (27 December 2002); doi: 10.1117/12.467782